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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N4938 Fairchild Semiconductor electronic component

1N4938

DIODE GEN PURP 200V 500MA DO35

Fairchild Semiconductor

 57,593
RFQ

Datasheet

 		- DO-204AH, DO-35, Axial Bulk Obsolete Standard 200 V 500mA 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 75 V 5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) 175°C (Max)
STPSC6H065BY-TR STMicroelectronics electronic component

STPSC6H065BY-TR

DIODE SIL CARBIDE 650V 6A DPAK

STMicroelectronics

 7,471
RFQ

Datasheet

 		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A - No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount DPAK -40°C ~ 175°C
IDK10G65C5XTMA1 Infineon Technologies electronic component

IDK10G65C5XTMA1

DIODE SIL CARB 650V 10A TO263-2

Infineon Technologies

 5,530
RFQ

Datasheet

 		CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 1.7 mA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
WNSC2D08650DJ WeEn Semiconductors electronic component

WNSC2D08650DJ

DIODE SIL CARBIDE 650V 8A DPAK

WeEn Semiconductors

 7,463
RFQ

Datasheet

 		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount DPAK 175°C
BYQ60W-600PT2Q WeEn Semiconductors electronic component

BYQ60W-600PT2Q

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

 569
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C
BYV60W-600PT2Q WeEn Semiconductors electronic component

BYV60W-600PT2Q

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

 468
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 600 V 60A 1.7 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 79 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C
SCS304APC9 Rohm Semiconductor electronic component

SCS304APC9

DIODE SILICON CARBIDE 650V 4A

Rohm Semiconductor

 862
RFQ

Datasheet

 		- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 200pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
RFUS20NS4STL Rohm Semiconductor electronic component

RFUS20NS4STL

DIODE GEN PURP 430V 20A LPDS

Rohm Semiconductor

 259
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 430 V 20A - Fast Recovery =< 500ns, > 200mA (Io) - - - - - Surface Mount LPDS 150°C (Max)
RBQ30NS45BTL Rohm Semiconductor electronic component

RBQ30NS45BTL

DIODE SCHOTTKY 45V 30A LPDS

Rohm Semiconductor

 706
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 30A 590 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 45 V - - - Surface Mount LPDS 150°C
WNSC2D10650Q WeEn Semiconductors electronic component

WNSC2D10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

 995
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C
MUR3040 onsemi electronic component

MUR3040

DIODE GEN PURP 400V 15A TO218

onsemi

 7,505
RFQ

Datasheet

 		- TO-218-2 Bulk Active Standard 400 V 30A 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 35 µA @ 400 V 175pF @ 4V, 1MHz - - Through Hole TO-218 -65°C ~ 175°C
SDT05S60 Infineon Technologies electronic component

SDT05S60

DIODE SIL CARB 600V 5A TO220-2

Infineon Technologies

 2,481
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 170pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
RHRU5060 Harris Corporation electronic component

RHRU5060

DIODE AVALANCHE 600V 50A TO218

Harris Corporation

 734
RFQ

Datasheet

 		- TO-218-1 Bulk Active Avalanche 600 V 50A 2.1 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 µA @ 600 V - - - Chassis Mount TO-218 -65°C ~ 175°C
WNSC6D166506Q WeEn Semiconductors electronic component

WNSC6D166506Q

DIODE SIL CARB 650V 16A TO220AC

WeEn Semiconductors

 2,976
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.45 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C
RURG8080 Harris Corporation electronic component

RURG8080

DIODE AVALANCHE 800V 80A TO247-2

Harris Corporation

 703
RFQ

Datasheet

 		- TO-247-2 Bulk Active Avalanche 800 V 80A 1.9 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 800 V - - - Through Hole TO-247-2 -65°C ~ 175°C
RURG8070 Harris Corporation electronic component

RURG8070

DIODE AVALANCHE 700V 80A TO247-2

Harris Corporation

 450
RFQ

Datasheet

 		- TO-247-2 Bulk Active Avalanche 700 V 80A 1.9 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 700 V - - - Through Hole TO-247-2 -65°C ~ 175°C
BYC30W-600PT2Q WeEn Semiconductors electronic component

BYC30W-600PT2Q

DIODE GEN PURP 600V 30A TO247-2

WeEn Semiconductors

 1,787
RFQ

Datasheet

 		- TO-247-2 Bulk Active Standard 600 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 34 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
PSDH60120L1_T0_00001 Panjit International Inc. electronic component

PSDH60120L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

 1,500
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 1200 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 330 ns 250 µA @ 1200 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
S3D08065L SMC Diode Solutions electronic component

S3D08065L

DIODE SIL CARBIDE 650V 24A 5DFN

SMC Diode Solutions

 1,200
RFQ

Datasheet

 		- 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 24A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 650pF @ 0V, 1MHz - - Surface Mount 5-DFN (8x8) -55°C ~ 175°C
BYC30W-1200PQ WeEn Semiconductors electronic component

BYC30W-1200PQ

DIODE GEN PURP 1.2KV 30A TO247-2

WeEn Semiconductors

 386
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 175°C (Max)
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.

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