Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
PCDP05120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,943	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	252pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1265G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	452pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
NXPSC06650X6Q DIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors	197	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C (Max)
IDH10S60CAKSA1 DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	6,184	RFQ	Datasheet	CoolSiC™+	TO-220-2	Bulk	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
PCDP0665G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,998	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
WND45P16WQ DIODE GEN PURP 1.6KV 45A TO247-2 WeEn Semiconductors	1,008	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	45A	1.4 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	-	-	-	Through Hole	TO-247-2	150°C
MUR6060B-BP DIODE GEN PURP 600V 60A TO247AD Micro Commercial Co	512	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	15 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
FFSB0465A DIODE SIL CARB 650V 7.7A D2PAK-2 onsemi	770	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	7.7A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
CDBJFSC5650-G DIODE SIL CARBIDE 650V 5A TO220F Comchip Technology	346	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	430pF @ 0V, 1MHz	-	-	Through Hole	TO-220F	-55°C ~ 175°C
SICRF10650 DIODE SIL CARB 650V 10A ITO220AC SMC Diode Solutions	194	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	695pF @ 0V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
PSDH6060L1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,425	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.75 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	205 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
MBRB2515LT4G DIODE SCHOTTKY 15V 25A D2PAK onsemi	214	RFQ	Datasheet	SWITCHMODE™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	15 V	25A	450 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 mA @ 15 V	-	-	-	Surface Mount	D2PAK	100°C (Max)
S3D20065E DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	2,500	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	Surface Mount	5-DFN (8x8)	-
STPSC6H12B-TR1 DIODE SIL CARBIDE 1.2KV 6A DPAK STMicroelectronics	7,403	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	6A	1.9 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	330pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
VS-100BGQ030 DIODE SCHOTTKY 30V 100A POWIRTAB Vishay General Semiconductor - Diodes Division	144	RFQ	Datasheet	-	PowerTab™, PowIRtab™	Bulk	Obsolete	Schottky	30 V	100A	580 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.4 mA @ 30 V	-	-	-	Chassis Mount	PowIRtab™	-55°C ~ 150°C
RHRU75100 DIODE AVALANCHE 1KV 75A TO218 Harris Corporation	149	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	1000 V	75A	3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1000 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
RHRU7540 DIODE AVALANCHE 400V 75A TO218 Harris Corporation	549	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	400 V	75A	2.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 µA @ 400 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
FFSPF0665A DIODE SIC 650V 6A TO220F-2FS onsemi	898	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
IV1D06006O2 DIODE SIL CARB 650V 17.4A TO220 Inventchip	132	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	17.4A	1.65 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	212pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
CDBD2SC21200-G DIODE SIL CARB 1.2KV 6.2A TO263 Comchip Technology	381	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	6.2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	136pF @ 0V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

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Single Diodes Electronic Components

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