Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RURP3010 DIODE AVALANCHE 100V 30A TO220AC Harris Corporation	6,015	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Avalanche	100 V	30A	1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 µA @ 100 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
RHRG5070 DIODE AVALANCHE 700V 50A TO247 Harris Corporation	4,050	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	700 V	50A	3 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	500 µA @ 700 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
IDDD04G65C6XTMA1 DIODE SIL CARB 650V 13A HDSOP-10 Infineon Technologies	7,511	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	13A	-	No Recovery Time > 500mA (Io)	0 ns	14 µA @ 420 V	205pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
SICRF6650 DIODE SIL CARB 650V 6A ITO220AC SMC Diode Solutions	250	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	150pF @ 5V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
STPS5H100H DIODE SCHOTTKY 100V 5A TO251 STMicroelectronics	1,832	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	Schottky	100 V	5A	730 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3.5 µA @ 100 V	-	-	-	Through Hole	TO-251 (IPAK)	175°C (Max)
WNSC2D06650DJ DIODE SIL CARBIDE 650V 6A DPAK WeEn Semiconductors	11,997	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	198pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C
TSUP15M60SH S1G DIODE SCHOTTKY 60V 15A SMPC4.6U Taiwan Semiconductor Corporation	675	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	60 V	15A	640 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	450 µA @ 60 V	1046pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	SMPC4.6U	-55°C ~ 175°C
SCS304AHGC9 DIODE SIL CARB 650V 4A TO220ACP Rohm Semiconductor	681	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
STPSC16H065AW DIODE SIL CARB 650V 16A TO247-3 STMicroelectronics	120	RFQ	Datasheet	ECOPACK®2	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.75 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Through Hole	TO-247-3	-40°C ~ 175°C
RFX10TF6S DIODE GEN PURP 600V 10A TO220NFM Rohm Semiconductor	936	RFQ	-	-	TO-220-2 Full Pack	Tube	Not For New Designs	Standard	600 V	10A	2.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220NFM	150°C (Max)
RJU6053TDPP-EJ#T2 DIODE GP 600V 20A TO220FP-2L Renesas Electronics Corporation	80,748	RFQ	Datasheet	-	TO-220-2 Full Pack	Bulk	Active	Standard	600 V	20A	3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 600 V	-	-	-	Through Hole	TO-220FP-2L	150°C (Max)
S3D10065E1 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	2,500	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	31A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	680pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
GE1304 DIODE GEN PURP 200V 6A AL-4 Harris Corporation	2,853	RFQ	Datasheet	-	DO-204, Axial	Bulk	Active	Standard	200 V	6A	975 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	100pF @ 4V, 1MHz	-	-	Through Hole	AL-4	-65°C ~ 175°C
SBX2050 DIODE SCHOTTKY 50V 20A P600 Diotec Semiconductor	3,000	RFQ	Datasheet	-	P600, Axial	Tape & Reel (TR)	Active	Schottky	50 V	20A	610 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	-	-	Through Hole	P600	-50°C ~ 150°C
WNSC2D08650Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	4,990	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
MUR6040B-BP DIODE GEN PURP 400V 60A TO247AD Micro Commercial Co	3,224	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	400 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 400 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 150°C
CDBZ5T1045-HF DIODE SCHOTTKY 45V 10A SMC Comchip Technology	263	RFQ	Datasheet	-	Z5-T	Tape & Reel (TR)	Obsolete	Schottky	45 V	10A	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	-	-	Surface Mount	SMC (Z5-T)	-55°C ~ 150°C
RHRG5090 DIODE AVALANCHE 900V 50A TO247 Harris Corporation	3,150	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	900 V	50A	3 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	500 µA @ 900 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
RHRG5080 DIODE AVALANCHE 800V 50A TO247 Harris Corporation	602	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	800 V	50A	3 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	500 µA @ 800 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
RHRG50100 DIODE AVALANCHE 1KV 50A TO247 Harris Corporation	274	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	1000 V	50A	3 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	250 µA @ 1000 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C

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Single Diodes Electronic Components

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