Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SARS10 DIODE GEN PURP 800V 300MA TO220F Sanken Electric USA Inc.	1,404	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	800 V	300mA	1.05 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	9 µs	10 µA @ 800 V	-	-	-	Through Hole	TO-220F-2L	-20°C ~ 125°C
FMN-1106S DIODE GEN PURP 600V 10A TO220F Sanken Electric USA Inc.	4,807	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	600 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
FERD20M60ST DIODE FERD 60V 20A TO220 STMicroelectronics	1,117	RFQ	Datasheet	-	TO-220-3	Tube	Obsolete	FERD (Field Effect Rectifier Diode)	60 V	20A	560 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	230 µA @ 60 V	-	-	-	Through Hole	TO-220	175°C (Max)
RURDG1540 ULTRAFAST DIODE Harris Corporation	210	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
S4D05120E1 1200V, 5A, DPAK, SIC SCHOTTKY DI SMC Diode Solutions	2,382	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	1200 V	5A	1.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
MUR15120L-BP DIODE GEN PURP 1.2KV 15A TO220AC Micro Commercial Co	4,797	RFQ	Datasheet	-	TO-220-2	Tube	Not For New Designs	Standard	1200 V	15A	3.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	5 µA @ 1200 V	48pF @ 4V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
V12P22HM3/H DIODE SCHOTTKY 200V 3.2A TO277A Vishay General Semiconductor - Diodes Division	2,473	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Discontinued at Digi-Key	Schottky	200 V	3.2A	900 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 200 V	720pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-277A (SMPC)	-40°C ~ 175°C
MBRB1045T4G DIODE SCHOTTKY 45V 10A D2PAK onsemi	8,402	RFQ	Datasheet	SWITCHMODE™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	45 V	10A	840 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	-	-	Surface Mount	D2PAK	-65°C ~ 175°C
WNSC2D04650XQ DIODE SIL CARBIDE 650V 4A TO220F WeEn Semiconductors	2,756	RFQ	-	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	125pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C
RHRP1580 DIODE AVALANCHE 800V 15A TO220AC Harris Corporation	2,046	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Avalanche	800 V	15A	3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	100 µA @ 800 V	-	-	-	Through Hole	TO-220AC	-65°C ~ 175°C
RURDG1560 ULTRAFAST DIODE Harris Corporation	959	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
UD1006FR-H DIODE GEN PURP 600V 10A onsemi	451	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Standard	600 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	100 µA @ 600 V	-	-	-	Through Hole	-	150°C (Max)
IDL02G65C5XUMA2 DIODE SIL CARBIDE 650V 2A VSON-4 Infineon Technologies	2,850	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	35 µA @ 650 V	70pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 175°C
PSDP15120L1_T0_00001 TO-220AC, FAST Panjit International Inc.	5,341	RFQ	Datasheet	-	TO-220-2	Tube	Not For New Designs	Standard	1200 V	15A	2.6 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
TSD3GH DIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation	3,675	RFQ	Datasheet	-	DO-214AB, SMC	Cut Tape (CT)	Discontinued at Digi-Key	Standard	400 V	3A	-	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	45pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	DO-214AB (SMC)	-55°C ~ 175°C
TSUP10M60SH S1G DIODE SCHOTTKY 60V 10A SMPC4.6U Taiwan Semiconductor Corporation	2,825	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	60 V	10A	640 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 60 V	658pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	SMPC4.6U	-55°C ~ 175°C
STPS20SM60D DIODE SCHOTTKY 60V 20A TO220AC STMicroelectronics	2,754	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Schottky	60 V	20A	630 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	85 µA @ 60 V	-	-	-	Through Hole	TO-220AC	150°C (Max)
IDH05SG60CXKSA1 DIODE SIL CARB 600V 5A TO220-2-2 Infineon Technologies	9,538	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	5A	2.3 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 600 V	110pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
S3D03065L DIODE SIL CARBIDE 650V 17A 5DFN SMC Diode Solutions	1,574	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	17A	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	2 µA @ 650 V	230pF @ 0V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
WNSC2D04650TJ DIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors	10,523	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	125pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C

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Single Diodes Electronic Components

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