Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N3889R DIODE GEN PURP REV 50V 12A DO4 GeneSiC Semiconductor	150	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	50 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
SCS210KGC17 DIODE SIC 1.2KV 10A TO220ACFP Rohm Semiconductor	397	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
FFSP4065BDN-F085 DIODE SIL CARB 650V 20A TO220-3 onsemi	756	RFQ	Datasheet	-	TO-220-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-3	-55°C ~ 175°C
C4D10120H DIODE SIL CARB 1.2KV 31.5A TO247 Wolfspeed, Inc.	1,226	RFQ	Datasheet	Z-Rec®	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	31.5A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	754pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SCS220AEGC11 DIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor	345	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-247	175°C
FFSH20120A-F085 DIODE SIL CARB 1.2KV 30A TO247-2 onsemi	398	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
S3D35065D1 DIODE SIL CARB 650V 35A TO247AD SMC Diode Solutions	585	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.7 V @ 35 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	2000pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
DHG30IM600PC-TUB DIODE GEN PURP 600V 30A TO263 IXYS	1,361	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	30A	2.26 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	16pF @ 400V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 150°C
VS-3C20ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	565	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	845pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
SCS215AJHRTLL DIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor	2,008	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
MSC020SDA120K DIODE SIL CARB 1.2KV 49A TO220-2 Microchip Technology	105	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	49A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1130pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-80APF10-M3 DIODE GEN PURP 1KV 80A TO247AC Vishay General Semiconductor - Diodes Division	475	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1000 V	80A	1.35 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
DHG30I600HA DIODE GEN PURP 600V 30A TO247 IXYS	296	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	2.36 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-247	-55°C ~ 150°C
FFSH20120ADN-F085 DIODE SIL CARB 1.2KV 15A TO247-3 onsemi	304	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
FFSH4065BDN-F085 DIODE SIL CARB 650V 20A TO247-3 onsemi	140	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
LSIC2SD065D20A DIODE SIL CARB 650V 20A TO220AC Littelfuse Inc.	742	RFQ	Datasheet	Gen2	TO-220-2	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 45 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220AC	-
S5D40120D 1200V, 40A, TO-247AD, SIC SCHOTT SMC Diode Solutions	1,800	RFQ	Datasheet	-	TO-247-3	Tube	Active	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247AD	-
SCS220AJHRTLL DIODE SIL CARB 650V 20A TO263AB Rohm Semiconductor	2,697	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
C4D15120H DIODE SIL CARB 1.2KV 39A TO247-2 Wolfspeed, Inc.	420	RFQ	Datasheet	Z-Rec®	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	39A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSB20120A-F085 DIODE SIL CARB 1.2KV 32A D2PAK onsemi	2,137	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	32A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

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Single Diodes Electronic Components

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