Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDB06S60C DIODE SIL CARB 600V 6A TO263-3-2 Infineon Technologies	8,249	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 600 V	280pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-3-2	-55°C ~ 175°C
FFSP05120A DIODE SIL CARBIDE 1.2KV TO220-2L onsemi	5,844	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	-	1.75 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	-	-	-	Through Hole	TO-220-2L	-
SIDC11D60SIC3 DIODE SIL CARB 600V 4A WAFER Infineon Technologies	2,474	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	4A	1.9 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	150pF @ 1V, 1MHz	-	-	Surface Mount	Sawn on foil	-55°C ~ 175°C
SCS212AGC DIODE SIL CARB 650V 12A TO220AC Rohm Semiconductor	8,837	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
IDH09G65C5XKSA2 DIODE SIL CARB 650V 9A TO220-2-1 Infineon Technologies	2,764	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	9A	1.7 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 650 V	270pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
1N3595-1 DIODE GEN PURP 125V 150MA DO35 Microchip Technology	9,309	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	125 V	150mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
CDLL4148E3 DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	4,255	RFQ	-	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 200°C
CDLL2810E3 DIODE SCHOTTKY 50V 75MA DO213AA Microchip Technology	7,349	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Schottky	50 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	100 nA @ 15 V	2pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
CDLL6676/TR DIODE SCHOTTKY 30V 200MA DO213AA Microchip Technology	5,978	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	30 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 30 V	50pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 125°C
CDLL2810/TR DIODE SCHOTTKY 20V 75MA DO213AA Microchip Technology	5,843	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	100 nA @ 15 V	2pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
VS-25FR10 DIODE GEN PURP 100V 25A DO203AA Vishay General Semiconductor - Diodes Division	9,281	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
SD200SC100A1.T1 DIODE SCHOTTKY 100V 60A DIE SMC Diode Solutions	2,879	RFQ	Datasheet	-	Die	Tray	Active	Schottky	100 V	60A	870 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	1500pF @ 5V, 1MHz	-	-	Surface Mount	Die	-55°C ~ 200°C
30CPF10 DIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	8,552	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
DSC06065 DIODE SIL CARB 650V 6A TO220AC Diodes Incorporated	8,125	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	225pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
CDBJSC8650-G DIODE SIL CARB 650V 8A TO220-2 Comchip Technology	4,967	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	560pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
NXPSC04650D6J DIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors	6,462	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
FFH60UP60S DIODE GEN PURP 600V 60A TO247-2 onsemi	7,409	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 150°C
JANTXV1N4150-1/TR DIODE GEN PURP 50V 200MA DO35 Microchip Technology	7,661	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/231	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
DTH6007PT DIODE 650V 60A TO247-2 Diodes Incorporated	6,078	RFQ	-	-	TO-247-2	Tube	Not For New Designs	-	650 V	60A	2.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	100 µA @ 650 V	-	-	-	Through Hole	TO-247-2 (Type HE)	-55°C ~ 175°C
SICF10120Y-BP SCHOTTKY DIODES Micro Commercial Co	5,407	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.54 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	13 µA @ 1200 V	700pF @ 0V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C

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Single Diodes Electronic Components

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