Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
DPG30I600AHA POWER DIODE DISCRETES-FRED TO-24 IXYS	4,099	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
STTA2006PIRG DIODE GEN PURP 600V 20A DOP3I STMicroelectronics	7,075	RFQ	-	TURBOSWITCH™	DOP3I-2 Insulated (Straight Leads)	Bulk	Obsolete	Standard	600 V	20A	1.75 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	100 µA @ 600 V	-	-	-	Through Hole	DOP3I	150°C (Max)
VS-30ETH06FP-N3 DIODE GP 600V 30A TO220-2FP Vishay General Semiconductor - Diodes Division	5,081	RFQ	Datasheet	FRED Pt®	TO-220-2 Full Pack	Tube	Active	Standard	600 V	30A	2.6 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 600 V	-	-	-	Through Hole	TO-220-2 Full Pack	-65°C ~ 175°C
20ETF06S DIODE GEN PURP 600V 20A TO263AB Vishay General Semiconductor - Diodes Division	2,177	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	Standard	600 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
20ETF06STRL DIODE GEN PURP 600V 20A TO263AB Vishay General Semiconductor - Diodes Division	9,646	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Standard	600 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
CDLL4150 DIODE GEN PURP 75V 300MA DO213AA Microchip Technology	7,699	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
SCS205KGC DIODE SIL CARB 1.2KV 5A TO220AC Rohm Semiconductor	7,558	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	270pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
VS-6FR40 DIODE GP REV 400V 6A DO203AA Vishay General Semiconductor - Diodes Division	4,693	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
1N4370A/TR DIODE DO35 Microchip Technology	6,789	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	-	-	-	1.1 V @ 200 mA	-	-	100 µA @ 1 V	-	-	-	Through Hole	DO-204AH (DO-35)	-
UPR60E3/TR13 DIODE GEN PURP 600V 2A POWERMITE Microchip Technology	9,870	RFQ	Datasheet	-	DO-216AA	Tape & Reel (TR)	Active	Standard	600 V	2A	1.6 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 600 V	-	-	-	Surface Mount	Powermite	-55°C ~ 150°C
DMA50I1600HA DIODE GEN PURP 1.6KV 50A TO247 IXYS	2,981	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	50A	1.3 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1600 V	19pF @ 400V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
PCFF30H120SWF 1200V/30A GEN7 FRD HS SAWN-ON-FO onsemi	7,294	RFQ	Datasheet	-	Die	Tray	Active	Standard	1200 V	30A	1.9 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	222 ns	16 A @ 1200 V	-	-	-	Surface Mount	Wafer	-40°C ~ 175°C
65PQ015 DIODE SCHOTTKY 15V 65A TO247AC Vishay General Semiconductor - Diodes Division	9,531	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Schottky	15 V	65A	500 mV @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	-	18 mA @ 15 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 125°C
VS-65APF06L-M3 DIODE GEN PURP 600V 65A TO247AD Vishay General Semiconductor - Diodes Division	7,773	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	65A	1.32 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
VS-65EPF06L-M3 DIODE GEN PURP 600V 65A TO247AD Vishay General Semiconductor - Diodes Division	8,272	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	65A	1.32 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
TSN525M60 S3G DIODE SCHOTTKY 60V 25A 8DFN Taiwan Semiconductor Corporation	8,040	RFQ	-	-	8-PowerLDFN	Tape & Reel (TR)	Active	Schottky	60 V	25A	630 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	-	-	Surface Mount	8-PDFN (5x6)	-55°C ~ 150°C
1N4154-1/TR DIODE GEN PURP 35V 200MA DO35 Microchip Technology	5,385	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	35 V	200mA	1 V @ 30 mA	Small Signal =< 200mA (Io), Any Speed	2 ns	100 nA @ 25 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N4154-1E3 DIODE GEN PURP 35V 200MA DO35 Microchip Technology	8,804	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	35 V	200mA	1 V @ 30 mA	Small Signal =< 200mA (Io), Any Speed	2 ns	100 nA @ 25 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N3595 DIODE GEN PURP 125V 200MA AXIAL Microchip Technology	9,867	RFQ	Datasheet	-	Axial	Bulk	Active	Standard	125 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	-	-	Through Hole	Axial	-65°C ~ 150°C
WB100FC120ALZ WB100FC120AL/NAU000/NO MARK*CHIP WeEn Semiconductors	4,923	RFQ	-	-	Die	Bulk	Active	Standard	1200 V	100A	3.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	250 µA @ 1200 V	-	-	-	Surface Mount	Wafer	175°C

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Single Diodes Electronic Components

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