Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
19TQ015STRL DIODE SCHOTTKY 15V 19A TO263AB Vishay General Semiconductor - Diodes Division	8,611	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	15 V	19A	360 mV @ 19 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 15 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 125°C
19TQ015STRR DIODE SCHOTTKY 15V 19A TO263AB Vishay General Semiconductor - Diodes Division	4,955	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	15 V	19A	360 mV @ 19 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 15 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 125°C
CBR08P65D SIC SCHOTTKY DIODE,650V,8A,TO-25 Bruckewell	13	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	-	Automotive	AEC-Q101	Surface Mount	TO-252-2L	-55°C ~ 175°C
RURG30120 DIODE GEN PURP 1.2KV 30A TO247-2 onsemi	4,944	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Avalanche	1200 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
VS-30APF06-M3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	7,857	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-30APF12-M3 DIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division	6,452	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-30APF02-M3 DIODE SCHOTTKY 100V 3A TO247AC Vishay General Semiconductor - Diodes Division	6,690	RFQ	Datasheet	-	TO-247-3	Tube	Active	Schottky	100 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	115pF @ 5V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
VS-30APF04-M3 DIODE GEN PURP 400V 30A TO247AC Vishay General Semiconductor - Diodes Division	4,095	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	400 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	100 µA @ 400 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-30EPF02-M3 DIODE GP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division	6,406	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	200 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-30EPF04-M3 DIODE GP 400V 30A TO247AC Vishay General Semiconductor - Diodes Division	9,746	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	400 V	30A	1.41 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 400 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
JANTXV1N4150-1 DIODE GEN PURP 50V 200MA DO35 Microchip Technology	3,512	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/231	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
1N4371A/TR DIODE DO35 Microchip Technology	2,324	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	-	-	-	1.1 V @ 200 mA	-	-	75 µA @ 1 V	-	-	-	Through Hole	DO-204AH (DO-35)	-
1N4454UR-1/TR DIODE GEN PURP 50V 200MA DO213AA Microchip Technology	7,083	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	50 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	-	-	Surface Mount	DO-213AA	-55°C ~ 175°C
CD4150V DIODE GEN PURP 50V 200MA DIE Microchip Technology	2,445	RFQ	-	-	Die	Bulk	Active	Standard	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	Die	-55°C ~ 175°C
UPS1040/TR13 DIODE SCHOTTKY 40V 10A POWERMITE Microchip Technology	4,975	RFQ	-	-	DO-216AA	Tape & Reel (TR)	Active	Schottky	40 V	10A	490 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 35 V	700pF @ 4V, 1MHz	-	-	Surface Mount	Powermite	-55°C ~ 150°C
SICB10120Y-TP SCHOTTKY DIODES Micro Commercial Co	7,541	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.54 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	13 µA @ 1200 V	700pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
VS-16FR40 DIODE GEN PURP 400V 16A DO203AA Vishay General Semiconductor - Diodes Division	4,779	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
30CPF06 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	7,273	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	600 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
30EPF06 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	4,027	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	600 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
BYC60W-1200PQ BYC60W-1200P/TO247-2L/STANDARD M WeEn Semiconductors	4,320	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	1200 V	60A	3.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	96 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C

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Single Diodes Electronic Components

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