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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AIMCQ120R020M1TXTMA1 Infineon Technologies electronic component

AIMCQ120R020M1TXTMA1

SIC_DISCRETE

Infineon Technologies

2,840
RFQ

-

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 116A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 13.7mA 82 nC @ 20 V +25V, -10V 2667 pF @ 800 V - 577W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPQC60T010S7AXTMA1 Infineon Technologies electronic component

IPQC60T010S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

6,673
RFQ

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-101
IPDQ60T010S7AXTMA1 Infineon Technologies electronic component

IPDQ60T010S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

6,845
RFQ

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
SCT020W120G3-4AG STMicroelectronics electronic component

SCT020W120G3-4AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

4,205
RFQ

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
SCT020HU120G3AG STMicroelectronics electronic component

SCT020HU120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

6,493
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT012H90G3AG STMicroelectronics electronic component

SCT012H90G3AG

H2PAK-7

STMicroelectronics

9,849
RFQ

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 900 V 110A (Tc) 15V, 18V 15.8mOhm @ 60A, 18V 4.2V @ 10mA 138 nC @ 18 V +18V, -5V 3880 pF @ 600 V - 625W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
SCT016H120G3AG STMicroelectronics electronic component

SCT016H120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

3,768
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IXFT150N25X3HV Littelfuse Inc. electronic component

IXFT150N25X3HV

MOSFET N-CH 250V 150A TO268HV

Littelfuse Inc.

3,294
RFQ

Datasheet

HiPerFET™, Ultra X3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 150A (Tc) 10V 9mOhm @ 75A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
DMWSH120H28SM3 Diodes Incorporated electronic component

DMWSH120H28SM3

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

3,166
RFQ

-

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H28SM4 Diodes Incorporated electronic component

DMWSH120H28SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

3,947
RFQ

-

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 173.7 nC @ 15 V +19V, -8V 3944 pF @ 1000 V - 429W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DIW120SIC028 Diotec Semiconductor electronic component

DIW120SIC028

SIC MOSFET, TO-247-3L, N, 118A,

Diotec Semiconductor

8,239
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 118A (Tc) 20V 28mOhm @ 80A, 20V 4V @ 25mA 373 nC @ 20 V +20V, -5V 5691 pF @ 1000 V - 715W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DIF120SIC022 Diotec Semiconductor electronic component

DIF120SIC022

SIC MOSFET, TO-247-4L, N, 120A,

Diotec Semiconductor

3,354
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DIF120SIC028 Diotec Semiconductor electronic component

DIF120SIC028

SIC MOSFET, TO-247-4L, N, 118A,

Diotec Semiconductor

6,054
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 118A (Tc) 20V 28mOhm @ 80A, 20V 4V @ 25mA 373 nC @ 20 V +20V, -5V 5691 pF @ 1000 V - 715W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DIW065SIC015 Diotec Semiconductor electronic component

DIW065SIC015

SIC MOSFET, TO-247-3L, N, 150A,

Diotec Semiconductor

2,208
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 150A (Tc) 18V 15mOhm @ 75A, 18V 4V @ 15mA 236 nC @ 20 V +15V, -4V 7169 pF @ 400 V - 550W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DIF065SIC020 Diotec Semiconductor electronic component

DIF065SIC020

SIC MOSFET, TO-247-4L, N, 150A,

Diotec Semiconductor

6,880
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 150A (Tc) 18V 20mOhm @ 75A, 18V 4V @ 22mA 236 nC @ 20 V +18V, -5V 7169 pF @ 400 V - 550W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DMWSH120H28SM3Q Diodes Incorporated electronic component

DMWSH120H28SM3Q

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

9,774
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
IMBG65R009M1HXTMA1 Infineon Technologies electronic component

IMBG65R009M1HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

2,232
RFQ

Datasheet

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 170A (Tc) 18V 13.6mOhm @ 97.2A, 18V 5.7V @ 32.4mA 176 nC @ 18 V +23V, -5V 6054 pF @ 400 V - 555W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
IXTN400N20X4 IXYS electronic component

IXTN400N20X4

Ultra Junction X4-Class Power

IXYS

3,838
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 340A (Tc) 10V 3mOhm @ 100A, 10V 4.5V @ 250µA 348 nC @ 10 V ±20V 27700 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B - miniBLOC
C3M0032120J1-TR Wolfspeed, Inc. electronic component

C3M0032120J1-TR

SIC, MOSFET, 32M, 1200V, TO-263-

Wolfspeed, Inc.

2,493
RFQ

Datasheet

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 41.4A, 15V 3.6V @ 11.5mA 111 nC @ 15 V +15V, -4V 3424 pF @ 1000 V - 277W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
IXTN500N20X4 IXYS electronic component

IXTN500N20X4

Ultra Junction X4-Class Power

IXYS

6,952
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 500A (Tc) 10V 1.99mOhm @ 100A, 10V 4.5V @ 250µA 535 nC @ 10 V ±20V 41500 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B - miniBLOC
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FETs, MOSFETs Electronic Components

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