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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMWSH120H43SM3SIC MOSFET BVDSS: >1000V TO247 T |
6,863 |
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- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72.7A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 105 nC @ 15 V | +19V, -8V | 2187 pF @ 1000 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DMWSH120H43SM4SIC MOSFET BVDSS: >1000V TO247-4 |
2,860 |
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- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 72.7A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 105 nC @ 15 V | +19V, -8V | 2187 pF @ 1000 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT040W120G3-4SILICON CARBIDE POWER MOSFET 120 |
7,708 |
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Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IGOT65R025D2AUMA1IGOT65R025D2AUMA1 |
3,963 |
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Datasheet |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 61A (Tc) | - | - | 1.6V @ 6.1mA | 11 nC @ 3 V | -10V | 780 pF @ 400 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
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IGLT65R025D2AUMA1IGLT65R025D2AUMA1 |
2,691 |
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Datasheet |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 67A (Tc) | - | - | 1.6V @ 6.1mA | 11 nC @ 3 V | -10V | 780 pF @ 400 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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SCTWA40N120G2VDISCRETE |
7,567 |
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Datasheet |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +18V, -5V | 1233 pF @ 800 V | - | 278W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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SCTWA40N120G2V-4DISCRETE |
3,763 |
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- |
- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +18V, -5V | 1233 pF @ 800 V | - | 277W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT040H120G3AGH2PAK-7 |
2,115 |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | 4.2V @ 5mA | 54 nC @ 18 V | +18V, -5V | 1329 pF @ 800 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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SCT040HU120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
5,288 |
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Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S3M0025120DMOSFET SILICON CARBIDE SIC 1200V |
2,092 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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G3F25MT06L-TR650V 20M TO-LL G3F SIC MOSFET |
8,600 |
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- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 125A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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DIF065SIC030SIC MOSFET, TO-247-4L, N, 105A, |
2,722 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 105A (Tc) | 18V | 30mOhm @ 75A, 18V | 4V @ 23.5mA | 145 nC @ 18 V | +18V, -4V | 3300 pF @ 600 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCTWA40N12G24AGTO247-4 |
9,812 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | 5V @ 1mA | 63 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 290W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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DIW170SIC049SIC MOSFET, TO-247-3L, N, 67A, 1 |
6,892 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 67A (Tc) | 18V | 49mOhm @ 40A, 18V | 4V @ 15mA | 179 nC @ 18 V | +18V, -4V | 3046 pF @ 1000 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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MXP120A045FW-GE3SILICON CARBIDE MOSFET |
3,025 |
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MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 49A (Tc) | 18V, 20V | 56mOhm @ 20A, 20V | 2.38V @ 5mA | 75.6 nC @ 18 V | +22V, -10V | 1958 pF @ 800 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3L |
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MXP120A045FL-GE3SILICON CARBIDE MOSFET |
8,452 |
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- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPQC60T010S7XTMA1HIGH POWER_NEW |
7,182 |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-101 |
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SCT025H120G3-7SILICON CARBIDE POWER MOSFET 120 |
8,556 |
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* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXFR32N80Q3MOSFET N-CH 800V 24A ISOPLUS247 |
3,235 |
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Datasheet |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 24A (Tc) | 10V | 300mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IPDQ60T010S7XTMA1HIGH POWER_NEW |
4,509 |
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- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
FETs, MOSFETs Electronic Components
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Q2: Can I request a quotation for FETs, MOSFETs components?
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Q3: Are datasheets and technical information available?
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Q4: Do you support BOM sourcing?
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