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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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E3M0160120DSIC, MOSFET, 160M, 1200V, TO-247 |
3,369 |
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Datasheet |
E Series | TO-247-3 | Tray | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17.9A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 33 nC @ 15 V | -8V, +19V | 730 pF @ 1000 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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IPTC025N15NM6ATMA1TRENCH >=100V |
3,259 |
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Datasheet |
OptiMOS™ 6 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 26A (Ta), 264A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | 4V @ 275µA | 137 nC @ 10 V | ±20V | 9800 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
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IMZC120R053M2HXKSA1IMZC120R053M2HXKSA1 |
4,190 |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 38A (Tc) | 15V, 18V | 53mOhm @ 13A, 18V | 5.1V @ 4.1mA | 30 nC @ 18 V | +23V, -7V | 1010 pF @ 800 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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CCSPG1510N TR PBFREESURFACE MOUNT MOSFET |
9,174 |
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Datasheet |
- | 25-PowerVFQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 150 V | 100A (Tj) | 5V | 3.9mOhm @ 30A, 5V | 2.1V @ 12mA | 20 nC @ 5 V | +6V, -4V | 2200 pF @ 75 V | - | 200mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 25-CSP (4x6) |
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IGLT65R055D2ATMA1IGLT65R055D2ATMA1 |
7,300 |
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Datasheet |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | 4.7 nC @ 3 V | -10V | 340 pF @ 400 V | - | 102W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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IGOT65R055D2AUMA1IGOT65R055D2AUMA1 |
6,977 |
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Datasheet |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 28A (Tc) | - | - | 1.6V @ 2.6mA | 4.7 nC @ 3 V | -10V | 340 pF @ 400 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
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AIMBG120R160M1XTMA1SIC_DISCRETE |
2,986 |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.6mA | 14 nC @ 20 V | +23V, -5V | 350 pF @ 800 V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
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G3R60MT07J-TR650V 60M TO-263-7 G3R SIC MOSFET |
8,000 |
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Datasheet |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tc) | 15V | - | - | - | - | - | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MXP120A080FL-GE3SILICON CARBIDE MOSFET |
5,041 |
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- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DMWSH120H90SM4SIC MOSFET BVDSS: >1000V TO247-4 |
7,205 |
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- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 40A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 51.1 nC @ 15 V | +19V, -8V | 1112 pF @ 1000 V | - | 235W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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DMWSH120H90SM3SIC MOSFET BVDSS: >1000V TO247 T |
2,904 |
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- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 41A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 50.9 nC @ 15 V | +19V, -8V | 1090 pF @ 1000 V | - | 246W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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SCT070H120G3-7SILICON CARBIDE POWER MOSFET 120 |
6,906 |
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Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTBG023N065M3SSIC MOS D2PAK-7L 23MOHM 650V M3S |
7,818 |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1951 pF @ 400 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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IMLT65R033M2HXTMA1SILICON CARBIDE MOSFET |
8,373 |
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CoolSiC™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 68A (Tc) | 15V, 20V | 30mOhm @ 27.9A, 20V | 5.6V @ 5.7mA | 34 nC @ 18 V | +23V, -7V | 1213 pF @ 400 V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-6 |
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G3F45MT06L-TR650V 40M TO-LL G3F SIC MOSFET |
8,412 |
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- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 61A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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IPT60R016CM8XTMA1IPT60R016CM8XTMA1 |
6,939 |
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- |
CoolMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 142A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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STW70N65DM6-4MOSFET N-CH 650V 68A TO247-4 |
7,461 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4.75V @ 250µA | 125 nC @ 10 V | ±25V | 4900 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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DIW065SIC049SIC MOSFET, TO-247-3L, N, 60A, 6 |
6,490 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 60A (Tc) | 18V | 49mOhm @ 30A, 18V | 4V @ 10mA | 128 nC @ 20 V | +18V, -5V | 2612 pF @ 600 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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MSC035SMA070B4NMOSFET SIC 700 V 35 MOHM TO-247- |
8,067 |
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- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700 V | 75A (Tc) | 18V, 20V | 44mOhm @ 30A, 20V | 5V @ 2mA | 93 nC @ 20 V | +23V, -10V | 1806 pF @ 700 V | - | 304W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT040W65G3-4SILICON CARBIDE POWER MOSFET 650 |
2,863 |
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Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
FETs, MOSFETs Electronic Components
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