FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SIHB100N65E-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	2,191	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	100mOhm @ 12A, 10V	5V @ 250µA	62 nC @ 10 V	±30V	2137 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
DIW065SIC080 SIC MOSFET, TO-247-3L, N, 36A, 6 Diotec Semiconductor	7,072	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	36A (Tc)	18V	80mOhm @ 15A, 18V	4V @ 5mA	75 nC @ 20 V	+18V, -5V	1480 pF @ 600 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
EPC2304 TRANS GAN 200V .005OHM 7QFN EPC	2,787	RFQ	-	eGaN®	7-PowerWQFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	102A (Ta)	5V	3.1mOhm @ 32A, 5V	2.5V @ 8mA	24 nC @ 5 V	+6V, -4V	3195 pF @ 100 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	7-QFN (3x5)
AUIRF7799L2TR MOSFET N-CH 250V 375A DIRECTFET Infineon Technologies	6,719	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250 V	375A (Tc)	10V	38mOhm @ 21A, 10V	5V @ 250µA	165 nC @ 10 V	±30V	6714 pF @ 25 V	-	4.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric L8
IMBG65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	7,236	RFQ	Datasheet	CoolSiC™ Gen 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	49A (Tc)	15V, 20V	49mOhm @ 22.9A, 18V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12
TK040N60Z1,S1F 600V DTMOS6 TO-247 40MOHM Toshiba Semiconductor and Storage	6,022	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	52A (Ta)	10V	400mOhm @ 21.2A, 10V	4V @ 2.4mA	85 nC @ 10 V	±30V	5200 pF @ 300 V	-	297W (Tc)	150°C	-	-	Through Hole	TO-247
SIHH100N65E-T1-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	6,404	RFQ	Datasheet	E	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	28A (Tc)	10V	100mOhm @ 12A, 10V	5V @ 250µA	62 nC @ 10 V	±30V	2137 pF @ 100 V	-	184W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
G3F60MT06L-TR 650V 55M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	3,954	RFQ	-	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	48A (Tc)	15V, 18V	75mOhm @ 15A, 18V	4.3V @ 7mA	45 nC @ 18 V	+22V, -10V	1322 pF @ 400 V	-	185W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
IPQC60R040S7XTMA1 MOSFET Infineon Technologies	6,559	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	14A (Tc)	12V	40mOhm @ 13A, 12V	4.5V @ 790µA	83 nC @ 12 V	±20V	-	-	272W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
IMW65R060M2HXKSA1 IMW65R060M2HXKSA1 Infineon Technologies	2,932	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	32.8A (Tc)	15V, 20V	55mOhm @ 15.4A, 20V	5.6V @ 3.1mA	19 nC @ 18 V	+23V, -7V	669 pF @ 400 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
IPZA60R045P7XKSA1 MOSFET N-CH 650V 61A TO247-4-3 Infineon Technologies	8,983	RFQ	Datasheet	CoolMOS™ P7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	61A (Tc)	10V	45mOhm @ 22.5A, 10V	4V @ 1.08mA	90 nC @ 10 V	±20V	3891 pF @ 400 V	-	201W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4-3
PSMN1R0-100ASEJ PSMN1R0-100ASE/SOT8000A/CCPAK1 Nexperia USA Inc.	2,119	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	430A (Tc)	10V	1.04mOhm @ 25A, 10V	3.6V @ 1mA	509 nC @ 10 V	±20V	36460 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
PSMN1R0-80CSEJ PSMN1R0-80CSE/SOT8005A/CCPAK12 Nexperia USA Inc.	5,647	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	495A (Tc)	10V	0.95Ohm @ 25A, 10V	3.6V @ 1mA	504 nC @ 10 V	±20V	36802 pF @ 40 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
GS61008P-MR GS61008P-MR Infineon Technologies Canada Inc.	3,880	RFQ	-	-	5-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Tc)	6V	9.5mOhm @ 27A, 6V	2.6V @ 7mA	8 nC @ 6 V	+7V, -10V	600 pF @ 50 V	-	-	-55°C ~ 150°C	-	-	Surface Mount	-
IMW65R040M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	8	RFQ	Datasheet	CoolSiC™ Gen 2	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	46A (Tc)	15V, 20V	36mOhm @ 22.9A, 20V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
AIMZH120R120M1TXKSA1 SIC_DISCRETE Infineon Technologies	20	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	18V, 20V	150mOhm @ 7A, 20V	5.1V @ 2.2mA	18 nC @ 20 V	+23V, -5V	458 pF @ 800 V	-	133W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-11
IPT025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	8,457	RFQ	Datasheet	OptiMOS™ 6	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 263A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-1
IPTG025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	4,646	RFQ	Datasheet	OptiMOS™ 6	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 264A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOG-8-1
PSMN1R0-100ASFJ PSMN1R0-100ASF/SOT8000A/CCPAK1 Nexperia USA Inc.	3,861	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	460A (Tc)	10V	0.99mOhm @ 25A, 10V	4V @ 1mA	539 nC @ 10 V	±20V	33624 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
TK31J60W,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	25	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)

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FETs, MOSFETs Electronic Components

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