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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AMC3M0040120D Analog Power Inc. electronic component

AMC3M0040120D

SICFET N-CH 1200V 15A TO-247

Analog Power Inc.

 750
RFQ

Datasheet

 		* TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) - 15A (Tc) 15V, 20V 40mOhm @ 5A, 10V 2V @ 250µA (Min) - ±25V - - 500W (Tc) -55°C ~ 155°C (TJ) - - Through Hole TO-247
AC2M0045170K APSEMI electronic component

AC2M0045170K

SIC MOSFET N-CH 1700V 74A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 74A 20V 70mOhm @ 50A, 20V 4V @ 18mA - +25V, -10V - - 520W -40°C ~ 150°C (TJ) - - Through Hole TO-247-3
AC2M0045170D APSEMI electronic component

AC2M0045170D

SIC MOSFET N-CH 1700V 74A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 74A 20V 70mOhm @ 50A, 20V 4V @ 18mA - +25V, -10V - - 520W -40°C ~ 150°C (TJ) - - Through Hole TO-247-3
FF06020FA fastSiC electronic component

FF06020FA

SICFET N-CH 650V 101A TOLL

fastSiC

 300
RFQ

Datasheet

 		Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 101A (Tc) 18V 28mOhm @ 35A, 18V 2.5V @ 60mA 194 nC @ 15 V 18V 4437 pF @ 400 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
FF06020J-7A fastSiC electronic component

FF06020J-7A

SICFET N-CH 650V 101A TO-263-7L

fastSiC

 300
RFQ

Datasheet

 		Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 101A (Tc) 18V 28mOhm @ 35A, 18V 2.5V @ 60mA 194 nC @ 15 V 18V 4437 pF @ 400 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7L
FF07025FA fastSiC electronic component

FF07025FA

SICFET N-CH 750V 81A TOLL

fastSiC

 300
RFQ

-

 Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 81A (Tc) 18V 34mOhm @ 30A, 18V 2.5V @ 60mA 174 nC @ 15 V +18V, -8V 4604 pF @ 500 V - 333W (Tc) -55°C ~ 175°C (TJ) - - - TOLL
FF07025J-7A fastSiC electronic component

FF07025J-7A

SICFET N-CH 750V 81A TO-263-7L

fastSiC

 300
RFQ

-

 Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 81A (Tc) 18V 34mOhm @ 30A, 18V 2.5V @ 60mA 174 nC @ 15 V +18V, -8V 4604 pF @ 500 V - 333W (Tc) -55°C ~ 175°C (TJ) - - - TO-263-7L
FF07025QA fastSiC electronic component

FF07025QA

SICFET N-CH 750V 89A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 89A (Tc) 18V 34mOhm @ 30A, 18V 2.5V @ 60mA 174 nC @ 15 V +18V, -8V 4604 pF @ 500 V - 405W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06020QA fastSiC electronic component

FF06020QA

SICFET N-CH 650V 110A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 110A (Tc) 18V 28mOhm @ 35A, 18V 2.5V @ 60mA 194 nC @ 15 V +18V, -8V 4437 pF @ 400 V - 405W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06020E-3A fastSiC electronic component

FF06020E-3A

SICFET N-CH 650V 110A TO-247-3L

fastSiC

 300
RFQ

Datasheet

 		Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 110A (Tc) 15V, 18V 28mOhm @ 35A, 18V 2.5V @ 60mA (Typ) 194 nC @ 400 V +18V, -8V 4437 pF @ 400 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
FF07015QA fastSiC electronic component

FF07015QA

SICFET N-CH 750V 136A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 136A (Tc) 18V 20mOhm @ 50A, 18V 2.5V @ 100mA 329 nC @ 15 V +18V, -8V 7252 pF @ 500 V - 555W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06010QA fastSiC electronic component

FF06010QA

SICFET N-CH 650V 169A TO-247-4L

fastSiC

 100
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 169A (Tc) 18V 18mOhm @ 60A, 18V 2.5V @ 100mA 315 nC @ 15 V +18V, -8V 7390 pF @ 400 V - 555W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06010E-3A fastSiC electronic component

FF06010E-3A

SICFET N-CH 650V 169A TO-247-3L

fastSiC

 100
RFQ

-

 Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 169A (Tc) 15V, 18V 18mOhm @ 60A, 18V 2.5V @ 100mA 315 nC @ 400 V +18V, -8V 7390 pF @ 400 V - 555W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
NC1M120C12HTNG NovuSem electronic component

NC1M120C12HTNG

SiC MOSFET N 1200V 12mohm 214A

NovuSem

 100
RFQ

Datasheet

 		NC1M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 214A (Tc) 20V 20mOhm @ 100A, 20V 3.5V @ 40mA - +20V, -5V 8330 pF @ 1000 V - 938W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
AMC2M0025120D Analog Power Inc. electronic component

AMC2M0025120D

SICFET N-CH 1200V 20A TO-247

Analog Power Inc.

 500
RFQ

Datasheet

 		* TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) - 20A (Tc) 15V, 20V 25mOhm @ 5A, 10V 2V @ 250µA (Min) - ±25V - - 500W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
IRLML2803TRPBF Infineon Technologies electronic component

IRLML2803TRPBF

MOSFET N-CH 30V 1.2A SOT23

Infineon Technologies

 830
RFQ

Datasheet

 		HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.2A (Ta) 4.5V, 10V 250mOhm @ 910mA, 10V 1V @ 250µA 5 nC @ 10 V ±20V 85 pF @ 25 V - 540mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro3™/SOT-23
BSH103,215 Nexperia USA Inc. electronic component

BSH103,215

MOSFET N-CH 30V 850MA TO236AB

Nexperia USA Inc.

 681
RFQ

Datasheet

 		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 850mA (Ta) 2.5V 400mOhm @ 500mA, 4.5V 400mV @ 1mA (Min) 2.1 nC @ 4.5 V ±8V 83 pF @ 24 V - 540mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-236AB
SSM6J501NU,LF Toshiba Semiconductor and Storage electronic component

SSM6J501NU,LF

MOSFET P-CH 20V 10A 6UDFNB

Toshiba Semiconductor and Storage

 468
RFQ

Datasheet

 		U-MOSVI 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.5V, 4.5V 15.3mOhm @ 4A, 4.5V 1V @ 1mA 29.9 nC @ 4.5 V ±8V 2600 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 6-UDFNB (2x2)
SI4435FDY-T1-GE3 Vishay Siliconix electronic component

SI4435FDY-T1-GE3

MOSFET P-CH 30V 12.6A 8SOIC

Vishay Siliconix

 313
RFQ

Datasheet

 		TrenchFET® Gen III 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Tc) 4.5V, 10V 19mOhm @ 9A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1500 pF @ 15 V - 4.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SSM3K341TU,LF Toshiba Semiconductor and Storage electronic component

SSM3K341TU,LF

MOSFET N-CH 60V 6A UFM

Toshiba Semiconductor and Storage

 244
RFQ

Datasheet

 		U-MOSVIII-H 3-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 4A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.8W (Ta) 175°C - - Surface Mount UFM
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FETs, MOSFETs Electronic Components

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Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.

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