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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AC3M0075120D APSEMI electronic component

AC3M0075120D

SIC MOSFET N-CH 1200V 33A TO247-

APSEMI

10,000
RFQ

Datasheet

* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 33A 15V 90mOhm @ 20A, 15V 3.6V @ 5mA - +19V, -8V - - 136W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
NTMFS5C404NT1G-01 Flip Electronics electronic component

NTMFS5C404NT1G-01

NTMFS5C404NT1G-01

Flip Electronics

47,870
RFQ

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDBL0150N60 Fairchild Semiconductor electronic component

FDBL0150N60

FDBL0150N60 - N-CHANNEL POWERTRE

Fairchild Semiconductor

2,380
RFQ

Datasheet

PowerTrench® 8-PowerSFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
NVMFS5C404NAFT1G-01 Flip Electronics electronic component

NVMFS5C404NAFT1G-01

N-Channel 40 V 53A (Ta), 378A (T

Flip Electronics

1,500
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AUIRFP4110 International Rectifier electronic component

AUIRFP4110

MOSFET N-CH 100V 120A TO247AC

International Rectifier

14,894
RFQ

Datasheet

HEXFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
AUIRF7799L2TR International Rectifier electronic component

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFT

International Rectifier

5,733
RFQ

Datasheet

HEXFET® DirectFET™ Isometric L8 Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
FQA44N30 Fairchild Semiconductor electronic component

FQA44N30

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

410
RFQ

Datasheet

QFET® TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 300 V 43.5A (Tc) 10V 69mOhm @ 21.75A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
FDP039N08B-F102 Fairchild Semiconductor electronic component

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

Fairchild Semiconductor

399
RFQ

Datasheet

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 9450 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRL60SL216 International Rectifier electronic component

IRL60SL216

IRL60SL216 - 12V-300V N-CHANNEL

International Rectifier

800
RFQ

Datasheet

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.95mOhm @ 100A, 10V 2.4V @ 250µA 255 nC @ 4.5 V ±20V 15330 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262-3
FCA22N60N Fairchild Semiconductor electronic component

FCA22N60N

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

391
RFQ

Datasheet

SupreMOS™ TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 165mOhm @ 11A, 10V 4V @ 250µA 45 nC @ 10 V ±30V 1950 pF @ 100 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
RJK6013DPP-E0#T2 Renesas electronic component

RJK6013DPP-E0#T2

RJK6013DPP-E0#T2 - SILICON N CHA

Renesas

1,877
RFQ

Datasheet

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 700mOhm @ 5.5A, 10V 4.5V @ 1mA 37.5 nC @ 10 V ±30V 1450 pF @ 25 V - 30W (Tc) 150°C - - Through Hole TO-220FP
NP88N075EUE-E2-AY Renesas electronic component

NP88N075EUE-E2-AY

NP88N075EUE - POWER MOSFETS FOR

Renesas

1,600
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75 V 88A (Tc) 10V 8.5mOhm @ 44A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 12300 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C - - Surface Mount TO-263-3
RJK5013DPP-E0#T2 Renesas electronic component

RJK5013DPP-E0#T2

RJK5013DPP-E0#T2 - SILICON N CHA

Renesas

17,001
RFQ

Datasheet

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Ta) 10V 465mOhm @ 7A, 10V 4.5V @ 1mA 38 nC @ 10 V ±30V 1450 pF @ 25 V - 30W (Tc) 150°C - - Through Hole TO-220FP
RJK5013DPP-00#T2 Renesas electronic component

RJK5013DPP-00#T2

RJK5013DPP - N CHANNEL MOSFET

Renesas

2,494
RFQ

Datasheet

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Ta) 10V 465mOhm @ 7A, 10V 4.5V @ 1mA 38 nC @ 10 V ±30V 1450 pF @ 25 V - 30W (Tc) 150°C - - Through Hole TO-220FN
AC3M0060065K APSEMI electronic component

AC3M0060065K

SIC MOSFET N-CH 650V 38A TO247-4

APSEMI

10,000
RFQ

Datasheet

* TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA - +19V, -8V - - 150W -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0060065D APSEMI electronic component

AC3M0060065D

SIC MOSFET N-CH 650V 30A TO247-3

APSEMI

10,000
RFQ

Datasheet

* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA - +19V, -8V - - 150W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AUIRFSL8407 International Rectifier electronic component

AUIRFSL8407

MOSFET N-CH 40V 195A TO262

International Rectifier

1,288
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
RJK5014DPP-E0#T2 Renesas electronic component

RJK5014DPP-E0#T2

RJK5014DPP-E0#T2 - SILICON N CHA

Renesas

12,236
RFQ

Datasheet

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 390mOhm @ 9.5A, 10V 4.5V @ 1mA 46 nC @ 10 V ±30V 1800 pF @ 25 V - 35W (Tc) 150°C - - Through Hole TO-220FP
FL06150G fastSiC electronic component

FL06150G

SICFET N-CH 650V 15A PDFN8x8

fastSiC

300
RFQ

Datasheet

Lightning 4-PowerTSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 15A (Tc) 15V 150mOhm @ 5A, 15V 2V @ 8mA 29.5 nC @ 12 V 15V 672 pF @ 400 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 4-PDFN (8x8)
FDMF6808N onsemi electronic component

FDMF6808N

DRMOS MODULE

onsemi

3,000
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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