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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FCH041N65EFL4 Fairchild Semiconductor electronic component

FCH041N65EFL4

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor

 232
RFQ

Datasheet

 		FRFET®, SuperFET® II TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 7.6mA 298 nC @ 10 V ±20V 12560 pF @ 100 V - 595W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
AC3M0025065K APSEMI electronic component

AC3M0025065K

SIC MOSFET N-CH 650V 74A TO247-4

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 74A 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA - +19V, -8V - - 326W -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0030090K APSEMI electronic component

AC3M0030090K

SIC MOSFET N-CH 900V 74A TO247-4

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 74A 15V 39mOhm @ 35A, 15V 3.5V @ 11mA - +19V, -8V - - 240W -40°C ~ 150°C (TJ) - - Through Hole TO-247-4
AC2M0025120D APSEMI electronic component

AC2M0025120D

SIC MOSFET N-CH 1200V 92A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 92A 20V 34mOhm @ 50A, 20V 4V @ 15mA - +25V, -10V - - 378W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0025065D APSEMI electronic component

AC3M0025065D

SIC MOSFET N-CH 650V 98A TO247-3

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 98A 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA - +19V, -8V - - 326W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
FF06060J-7A fastSiC electronic component

FF06060J-7A

SICFET N-CH 650V 44A TO-263-7L

fastSiC

 300
RFQ

Datasheet

 		Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 44A (Tc) 18V 80mOhm @ 15A, 18V 2.5V @ 20mA 69 nC @ 15 V 18V 1499 pF @ 400 V - 214W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7L
FF06060FA fastSiC electronic component

FF06060FA

SICFET N-CH 650V 44A TOLL

fastSiC

 300
RFQ

Datasheet

 		Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 44A (Tc) 18V 80mOhm @ 15A, 18V 2.5V @ 20mA 69 nC @ 15 V 18V 1499 pF @ 400 V - 214W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
FF07075FA fastSiC electronic component

FF07075FA

SICFET N-CH 750V 36A TOLL

fastSiC

 300
RFQ

-

 Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 36A (Tc) 18V 95mOhm @ 10A, 18V 2.5V @ 20mA 70 nC @ 15 V +18V, -8V 1564 pF @ 500 V - 214W (Tc) -55°C ~ 175°C (TJ) - - - TOLL
FF07075J-7A fastSiC electronic component

FF07075J-7A

SICFET N-CH 750V 36A TO-263-7L

fastSiC

 300
RFQ

-

 Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 36A (Tc) 18V 95mOhm @ 10A, 18V 2.5V @ 20mA 70 nC @ 15 V +18V, -8V 1564 pF @ 500 V - 214W (Tc) -55°C ~ 175°C (TJ) - - - TO-263-7L
FF06060QA fastSiC electronic component

FF06060QA

SICFET N-CH 650V 43A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 43A (Tc) 18V 80mOhm @ 15A, 18V 2.5V @ 20mA 69 nC @ 15 V +18V, -8V 1499 pF @ 400 V - 202W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 - TO-247-4L
FF06060E-3A fastSiC electronic component

FF06060E-3A

SICFET N-CH 650V 43A TO-247-3L

fastSiC

 300
RFQ

-

 Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 43A (Tc) 18V 80mOhm @ 15A, 18V 2.5V @ 20mA 69 nC @ 15 V +18V, -8V 1499 pF @ 400 V - 202W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 - TO-247-3L
FF07075QA fastSiC electronic component

FF07075QA

SICFET N-CH 750V 34A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 34A (Tc) 18V 95mOhm @ 10A, 18V 2.5V @ 20mA 70 nC @ 15 V +18V, -8V 1564 pF @ 500 V - 180W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF07075E-3A fastSiC electronic component

FF07075E-3A

SICFET N-CH 750V 34A TO-247-3L

fastSiC

 300
RFQ

-

 Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 34A (Tc) 18V 95mOhm @ 10A, 18V 2.5V @ 20mA 70 nC @ 15 V +18V, -8V 1564 pF @ 500 V - 180W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-3L
AC3M0021120K APSEMI electronic component

AC3M0021120K

SIC MOSFET N-CH 1200V 102A TO247

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 102A (Tc) 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA - +19V, -8V - - 469W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0021120D APSEMI electronic component

AC3M0021120D

SIC MOSFET N-CH 1200V 117A TO247

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 82A 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA - +19V, -8V - - 469W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
FF12080J-7A fastSiC electronic component

FF12080J-7A

SICFET N-CH 1200V 31A TO-263-7L

fastSiC

 300
RFQ

Datasheet

 		Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 112mOhm @ 8A, 18V 2.5V @ 20mA 73 nC @ 15 V 18V 1548 pF @ 800 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7L
NC1M120C75GTNG NovuSem electronic component

NC1M120C75GTNG

SiC MOSFET N 1200V 75mohm 47A 3

NovuSem

 2,400
RFQ

Datasheet

 		NC1M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A (Tc) 20V 75mOhm @ 20A, 20V 2.8V @ 5mA - +20V, -5V 1450 pF @ 1000 V - 288W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
FCH76N60NF Fairchild Semiconductor electronic component

FCH76N60NF

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

 4,950
RFQ

Datasheet

 		SupreMOS™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 72.8A (Tc) 10V 38mOhm @ 38A, 10V 5V @ 250µA 300 nC @ 10 V ±30V 11045 pF @ 100 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
FF12080QA fastSiC electronic component

FF12080QA

SICFET N-CH 1200V 29A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 29A (Tc) 18V 112mOhm @ 8A, 18V 2.5V @ 20mA 73 nC @ 15 V +18V, -8V 1548 pF @ 800 V - 180W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF12080E-3A fastSiC electronic component

FF12080E-3A

SICFET N-CH 1200V 29A TO-247-3L

fastSiC

 300
RFQ

-

 Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 29A (Tc) 18V 112mOhm @ 8A, 18V 2.5V @ 20mA 73 nC @ 15 V +18V, -8V 1548 pF @ 800 V - 180W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-3L
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FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
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Q2: Can I request a quotation for FETs, MOSFETs components?
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Q3: Are datasheets and technical information available?
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Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.

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