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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GS65R030Q4A Goford Semiconductor electronic component

GS65R030Q4A

SiC MOSFET N-CH 650V 70A TO-247

Goford Semiconductor

 5,000
RFQ

Datasheet

 		TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - Automotive AEC-Q101 Through Hole TO-247-4L
GS65R045Q4A Goford Semiconductor electronic component

GS65R045Q4A

SiC MOSFET N-CH 650V 51A TO-247

Goford Semiconductor

 5,000
RFQ

Datasheet

 		TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - Automotive AEC-Q101 Through Hole TO-247-4L
MT9M131C12STC-MI-DR onsemi electronic component

MT9M131C12STC-MI-DR

CMOS IMAGE SENSOR SYSTEM-ON-CHIP

onsemi

 3,040
RFQ

Datasheet

 		* - Bulk Active - - - - - - - - - - - - - - - - -
AC3M0015065K APSEMI electronic component

AC3M0015065K

SIC MOSFET N-CH 650V 122A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 122A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA - +19V, -8V - - 416W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0015065D APSEMI electronic component

AC3M0015065D

SIC MOSFET N-CH 650V 122A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 122A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA - +19V, -8V - - 416W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
GS120R033Q4A Goford Semiconductor electronic component

GS120R033Q4A

SiC MOSFET N-CH 1200V 69A TO-24

Goford Semiconductor

 5,000
RFQ

Datasheet

 		TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - Automotive AEC-Q101 Through Hole TO-247-4L
GS120R040Q4 Goford Semiconductor electronic component

GS120R040Q4

SiC MOSFET N-CH 1200V 50A TO-24

Goford Semiconductor

 5,000
RFQ

Datasheet

 		TrenchFET® TO-247-4 Tube Active - - - - - - - - - - - - - - - Through Hole TO-247-4L
FF06030Q fastSiC electronic component

FF06030Q

SICFET N-CH 650V 65A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 65A (Tc) 18V 45mOhm @ 30A, 18V 2.2V @ 40mA 125 nC @ 15 V +18V, -8V 3015 pF @ 400 V - 202W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06030J-7A fastSiC electronic component

FF06030J-7A

SICFET N-CH 650V 74A TO-263-7L

fastSiC

 300
RFQ

Datasheet

 		Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 74A (Tc) 18V 45mOhm @ 30A, 18V 2.5V @ 40mA 125 nC @ 15 V 18V 3015 pF @ 400 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7L
FF06030FA fastSiC electronic component

FF06030FA

SICFET N-CH 650V 74A TOLL

fastSiC

 300
RFQ

Datasheet

 		Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 74A (Tc) 18V 45mOhm @ 30A, 18V 2.5V @ 40mA 125 nC @ 15 V 18V 3015 pF @ 400 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
FF06030J-7 fastSiC electronic component

FF06030J-7

SICFET N-CH 650V 62A TO-263-7L

fastSiC

 300
RFQ

Datasheet

 		Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 62A (Tc) 15V, 18V 45mOhm @ 30A, 18V 2.5V @ 40mA (Typ) 125 nC @ 400 V +18V, -8V 3015 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7L
FF07035FA fastSiC electronic component

FF07035FA

SICFET N-CH 750V 61A TOLL

fastSiC

 300
RFQ

-

 Falcon 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 61A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 267W (Tc) -55°C ~ 175°C (TJ) - - - TOLL
FF07035J-7A fastSiC electronic component

FF07035J-7A

SICFET N-CH 750V 61A TO-263-7L

fastSiC

 300
RFQ

-

 Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 61A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 267W (Tc) -55°C ~ 175°C (TJ) - - - TO-263-7L
FF07035QA fastSiC electronic component

FF07035QA

SICFET N-CH 750V 62A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 62A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 277W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
FF06030QA fastSiC electronic component

FF06030QA

SICFET N-CH 650V 75A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 75A (Tc) 18V 45mOhm @ 30A, 18V 2.5V @ 40mA 125 nC @ 15 V +18V, -8V 3015 pF @ 400 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 - TO-247-4L
FF07035E-3A fastSiC electronic component

FF07035E-3A

SICFET N-CH 750V 62A TO-247-3L

fastSiC

 300
RFQ

-

 Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 62A (Tc) 18V 48mOhm @ 22A, 18V 2.5V @ 40mA 112 nC @ 15 V +18V, -8V 2818 pF @ 500 V - 277W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-3L
FF06030E-3A fastSiC electronic component

FF06030E-3A

SICFET N-CH 650V 75A TO-247-3L

fastSiC

 300
RFQ

Datasheet

 		Falcon TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 75A (Tc) 15V, 18V 45mOhm @ 30A, 18V 2.2V @ 40mA (Typ) 125 nC @ 400 V +18V, -8V 3015 pF @ 400 V - 278W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
FF12040QA fastSiC electronic component

FF12040QA

SICFET N-CH 1200V 54A TO-247-4L

fastSiC

 300
RFQ

-

 Falcon TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 54A (Tc) 18V 56mOhm @ 20A, 18V 2.2V @ 40mA 117 nC @ 15 V +18V, -8V 3129 pF @ 800 V - 278W (Tc) -55°C ~ 175°C (TJ) - - - TO-247-4L
AC3M0016120K APSEMI electronic component

AC3M0016120K

SIC MOSFET N-CH 1200V 117A TO247

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 117A (Tc) 15V 22.3mOhm @ 75A, 15V 3.6V @ 23mA - +19V, -8V - - 556W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0016120D APSEMI electronic component

AC3M0016120D

SIC MOSFET N-CH 1200V 117A TO247

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 117A (Tc) 15V 22.3mOhm @ 75A, 15V 3.6V @ 23mA - +19V, -8V - - 556W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
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FETs, MOSFETs Electronic Components

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Q1: What products are included in FETs, MOSFETs?
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