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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AUIRFP1405 Infineon Technologies electronic component

AUIRFP1405

AUIRFP1405 - 55V-60V N-CHANNEL A

Infineon Technologies

 800
RFQ

Datasheet

 		HEXFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5.3mOhm @ 95A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
FCP13N60N Fairchild Semiconductor electronic component

FCP13N60N

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

 2,341
RFQ

Datasheet

 		SupreMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 258mOhm @ 6.5A, 10V 4V @ 250µA 39.5 nC @ 10 V ±30V 1765 pF @ 100 V - 116W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
2SK3435-AZ Renesas electronic component

2SK3435-AZ

2SK3435-AZ - SWITCHING N-CHANNEL

Renesas

 1,213
RFQ

Datasheet

 		- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 14mOhm @ 40A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 3200 pF @ 10 V - 1.5W (Ta), 84W (Tc) 150°C - - Through Hole TO-220AB
NTMFS4C805NT1G onsemi electronic component

NTMFS4C805NT1G

TRENCH 6 30V NCH

onsemi

 6,000
RFQ

-

 - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 11.9A (Ta) 4.5V, 10V 2.8mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 1972 pF @ 15 V - 770mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
AM90N04-02B Analog Power Inc. electronic component

AM90N04-02B

MOSFET N-CH 40V 120A TO-263

Analog Power Inc.

 1,000
RFQ

Datasheet

 		* - Bulk Active - - - - - - - - - - - - - - - - -
FDMS86152 Fairchild Semiconductor electronic component

FDMS86152

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

 479
RFQ

Datasheet

 		PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 45A (Tc) 6V, 10V 6mOhm @ 14A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 3370 pF @ 50 V - 2.7W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IPT60R102G7E8236XTMA1 Infineon Technologies electronic component

IPT60R102G7E8236XTMA1

HIGH POWER_NEW

Infineon Technologies

 6,778
RFQ

Datasheet

 		* - Bulk Active - - - - - - - - - - - - - - - - -
NP88N04NUG-S18-AY Renesas electronic component

NP88N04NUG-S18-AY

NP88N04NUG-S18-AY - MOS FIELD EF

Renesas

 1,450
RFQ

Datasheet

 		- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 88A (Tc) 10V 3.4mOhm @ 44A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 15000 pF @ 25 V - 1.8W (Ta), 200W (Tc) 175°C - - Through Hole TO-262
AC3M0280090D APSEMI electronic component

AC3M0280090D

SIC MOSFET N-CH 900V 11A TO247-3

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 11A 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA - +19V, -8V - - 45W -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0120100K APSEMI electronic component

AC3M0120100K

SIC MOSFET N-CH 1000V 24A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1000 V 24A 15V 155mOhm @ 15A, 15V 3.5V @ 3mA - +19V, -8V - - 83W -55°C ~ 150°C - - Through Hole TO-247-4
AC2M0160120D APSEMI electronic component

AC2M0160120D

SIC MOSFET N-CH 1200V 18A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 18A 20V 196mOhm @ 10A, 20V 4V @ 2.5mA - +25V, -10V - - 125W -55°C ~ 150°C - - Through Hole TO-247-3
AC2M0280120D APSEMI electronic component

AC2M0280120D

SIC MOSFET N-CH 1200V 11A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A 20V 370mOhm @ 6A, 20V 4V @ 1.25mA - +25V, -10V - - 69.4W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0160120D APSEMI electronic component

AC3M0160120D

SIC MOSFET N-CH 1200V 18A TO247-

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 18A 15V 208mOhm @ 8.5A, 15V 3.6V @ 2.33mA - +19V, -8V - - 97W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0350120D APSEMI electronic component

AC3M0350120D

SIC MOSFET N-CH 1200V 8A TO247-3

APSEMI

 10,000
RFQ

Datasheet

 		* TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 8A 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA - +19V, -8V - - 50W -55°C ~ 150°C - - Through Hole TO-247-3
AUIRF1324STRL International Rectifier electronic component

AUIRF1324STRL

MOSFET N-CH 24V 195A D2PAK

International Rectifier

 14,876
RFQ

Datasheet

 		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRF1324STRL Infineon Technologies electronic component

AUIRF1324STRL

AUIRF1324 - 20V-40V N-CHANNEL AU

Infineon Technologies

 316
RFQ

Datasheet

 		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
FDBL86563-F085 Fairchild Semiconductor electronic component

FDBL86563-F085

MOSFET N-CH 60V 240A 8HPSOF

Fairchild Semiconductor

 22,000
RFQ

Datasheet

 		PowerTrench® 8-PowerSFN Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-HPSOF
FQAF16N50 Fairchild Semiconductor electronic component

FQAF16N50

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

 7,560
RFQ

Datasheet

 		QFET® TO-3P-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 11.3A (Tc) 10V 320mOhm @ 5.65A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 3000 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PF
NP160N055TUJ-E1-AY Renesas electronic component

NP160N055TUJ-E1-AY

NP160N055TUJ-E1-AY - SWITCHINGN-

Renesas

 1,600
RFQ

Datasheet

 		- TO-263-7, D2PAK (6 Leads + Tab) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 10350 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C - - Surface Mount TO-263-7
2SK4092-S35-A Renesas electronic component

2SK4092-S35-A

2SK4092-S35-A - SWITCHING N-CHAN

Renesas

 5,520
RFQ

Datasheet

 		- TO-3P-3, SC-65-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 400mOhm @ 10A, 10V 3.5V @ 1mA 50 nC @ 10 V ±30V 3240 pF @ 10 V - 3W (Ta), 200W (Tc) 150°C - - Through Hole TO-3P (MP-88)
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FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
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Q2: Can I request a quotation for FETs, MOSFETs components?
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Q3: Are datasheets and technical information available?
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Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.

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