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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFP450LC Vishay Siliconix electronic component

IRFP450LC

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix

7,572
RFQ

Datasheet

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 2200 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP460LC Vishay Siliconix electronic component

IRFP460LC

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

4,966
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFL4105 Infineon Technologies electronic component

IRFL4105

MOSFET N-CH 55V 3.7A SOT223

Infineon Technologies

8,116
RFQ

Datasheet

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.7A (Ta) 10V 45mOhm @ 3.7A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 660 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IRF5305STRR Infineon Technologies electronic component

IRF5305STRR

MOSFET P-CH 55V 31A D2PAK

Infineon Technologies

7,682
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF3706S Infineon Technologies electronic component

IRF3706S

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies

4,061
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFS17N20D Infineon Technologies electronic component

IRFS17N20D

MOSFET N-CH 200V 16A D2PAK

Infineon Technologies

3,261
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFSL31N20D Infineon Technologies electronic component

IRFSL31N20D

MOSFET N-CH 200V 31A TO262

Infineon Technologies

2,123
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRL2703S Infineon Technologies electronic component

IRL2703S

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies

6,832
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRLR8503 Infineon Technologies electronic component

IRLR8503

MOSFET N-CH 30V 44A DPAK

Infineon Technologies

9,790
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFU18N15D Infineon Technologies electronic component

IRFU18N15D

MOSFET N-CH 150V 18A IPAK

Infineon Technologies

2,456
RFQ

Datasheet

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRFL1006 Infineon Technologies electronic component

IRFL1006

MOSFET N-CH 60V 1.6A SOT223

Infineon Technologies

4,909
RFQ

Datasheet

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 220mOhm @ 1.6A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 160 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IRL3215 Infineon Technologies electronic component

IRL3215

MOSFET N-CH 150V 12A TO220AB

Infineon Technologies

7,180
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 12A (Tc) 4V, 10V 166mOhm @ 7.2A, 10V 2V @ 250µA 35 nC @ 5 V ±16V 775 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF3706 Infineon Technologies electronic component

IRF3706

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies

3,171
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF3205L Infineon Technologies electronic component

IRF3205L

MOSFET N-CH 55V 110A TO262

Infineon Technologies

8,316
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF530NL Infineon Technologies electronic component

IRF530NL

MOSFET N-CH 100V 17A TO262

Infineon Technologies

6,069
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF730AL Vishay Siliconix electronic component

IRF730AL

MOSFET N-CH 400V 5.5A I2PAK

Vishay Siliconix

3,398
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
IRFZ24NL Infineon Technologies electronic component

IRFZ24NL

MOSFET N-CH 55V 17A TO262

Infineon Technologies

4,781
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFZ44EL Infineon Technologies electronic component

IRFZ44EL

MOSFET N-CH 60V 48A TO262

Infineon Technologies

3,713
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRL2505L Infineon Technologies electronic component

IRL2505L

MOSFET N-CH 55V 104A TO262

Infineon Technologies

2,221
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFI9634G Vishay Siliconix electronic component

IRFI9634G

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix

5,967
RFQ

-

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3

FETs, MOSFETs Electronic Components

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