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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFB9N60A Vishay Siliconix electronic component

IRFB9N60A

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix

 5,427
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFBC30A Vishay Siliconix electronic component

IRFBC30A

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix

 6,865
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFBC40 Vishay Siliconix electronic component

IRFBC40

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix

 8,045
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFD024 Vishay Siliconix electronic component

IRFD024

MOSFET N-CH 60V 2.5A 4DIP

Vishay Siliconix

 9,631
RFQ

Datasheet

 		- 4-DIP (0.300", 7.62mm) Tube Active N-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta) 10V 100mOhm @ 1.5A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
IRFD224 Vishay Siliconix electronic component

IRFD224

MOSFET N-CH 250V 630MA 4DIP

Vishay Siliconix

 6,019
RFQ

Datasheet

 		- 4-DIP (0.300", 7.62mm) Tube Active N-Channel MOSFET (Metal Oxide) 250 V 630mA (Ta) 10V 1.1Ohm @ 380mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFD9010 Vishay Siliconix electronic component

IRFD9010

MOSFET P-CH 50V 1.1A 4DIP

Vishay Siliconix

 7,203
RFQ

Datasheet

 		- 4-DIP (0.300", 7.62mm) Tube Active P-Channel MOSFET (Metal Oxide) 50 V 1.1A (Tc) 10V 500mOhm @ 580mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 240 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFD9024 Vishay Siliconix electronic component

IRFD9024

MOSFET P-CH 60V 1.6A 4DIP

Vishay Siliconix

 7,957
RFQ

Datasheet

 		- 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 280mOhm @ 960mA, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
IRFI510G Vishay Siliconix electronic component

IRFI510G

MOSFET N-CH 100V 4.5A TO220-3

Vishay Siliconix

 8,180
RFQ

-

 - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 540mOhm @ 2.7A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFI540G Vishay Siliconix electronic component

IRFI540G

MOSFET N-CH 100V 17A TO220-3

Vishay Siliconix

 7,026
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFI640G Vishay Siliconix electronic component

IRFI640G

MOSFET N-CH 200V 9.8A TO220-3

Vishay Siliconix

 8,594
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.8A (Tc) 10V 180mOhm @ 5.9A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFI644G Vishay Siliconix electronic component

IRFI644G

MOSFET N-CH 250V 7.9A TO220-3

Vishay Siliconix

 3,890
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 7.9A (Tc) 10V 280mOhm @ 4.7A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFI720G Vishay Siliconix electronic component

IRFI720G

MOSFET N-CH 400V 2.6A TO220-3

Vishay Siliconix

 7,669
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Tc) 10V 1.8Ohm @ 1.6A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFI820G Vishay Siliconix electronic component

IRFI820G

MOSFET N-CH 500V 2.1A TO220-3

Vishay Siliconix

 8,677
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFI9530G Vishay Siliconix electronic component

IRFI9530G

MOSFET P-CH 100V 7.7A TO220-3

Vishay Siliconix

 2,377
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 300mOhm @ 4.6A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFI9540G Vishay Siliconix electronic component

IRFI9540G

MOSFET P-CH 100V 11A TO220-3

Vishay Siliconix

 7,855
RFQ

-

 - TO-220-3 Full Pack, Isolated Tab Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 10V 200mOhm @ 6.6A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFI9Z34G Vishay Siliconix electronic component

IRFI9Z34G

MOSFET P-CH 60V 12A TO220-3

Vishay Siliconix

 6,144
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 140mOhm @ 7.2A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFIB5N65A Vishay Siliconix electronic component

IRFIB5N65A

MOSFET N-CH 650V 5.1A TO220-3

Vishay Siliconix

 5,156
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.1A (Tc) 10V 930mOhm @ 3.1A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1417 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFIBC30G Vishay Siliconix electronic component

IRFIBC30G

MOSFET N-CH 600V 2.5A TO220-3

Vishay Siliconix

 5,350
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Tc) 10V 2.2Ohm @ 1.5A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFIBC40G Vishay Siliconix electronic component

IRFIBC40G

MOSFET N-CH 600V 3.5A TO220-3

Vishay Siliconix

 9,282
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Tc) 10V 1.2Ohm @ 2.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFP054 Vishay Siliconix electronic component

IRFP054

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix

 4,358
RFQ

-

 - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 14mOhm @ 54A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 4500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
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FETs, MOSFETs Electronic Components

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