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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFBC30STRR Vishay Siliconix electronic component

IRFBC30STRR

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix

9,955
RFQ

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFBC40LCS Vishay Siliconix electronic component

IRFBC40LCS

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

6,106
RFQ

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFBE20L Vishay Siliconix electronic component

IRFBE20L

MOSFET N-CH 800V 1.8A I2PAK

Vishay Siliconix

6,664
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole I2PAK
IRFBE30STRL Vishay Siliconix electronic component

IRFBE30STRL

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix

5,005
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFBF30L Vishay Siliconix electronic component

IRFBF30L

MOSFET N-CH 900V 3.6A I2PAK

Vishay Siliconix

3,033
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole I2PAK
IRFI610G Vishay Siliconix electronic component

IRFI610G

MOSFET N-CH 200V 2.6A TO220-3

Vishay Siliconix

6,149
RFQ

-

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Ta) - - - - - - - - - - - Through Hole TO-220-3
IRFL024NTR Infineon Technologies electronic component

IRFL024NTR

MOSFET N-CH 55V 2.8A SOT223

Infineon Technologies

3,648
RFQ

Datasheet

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IRFR010TRR Vishay Siliconix electronic component

IRFR010TRR

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix

5,792
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR18N15DTRL Infineon Technologies electronic component

IRFR18N15DTRL

MOSFET N-CH 150V 18A DPAK

Infineon Technologies

8,019
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR18N15DTRR Infineon Technologies electronic component

IRFR18N15DTRR

MOSFET N-CH 150V 18A DPAK

Infineon Technologies

4,717
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR214TRL Vishay Siliconix electronic component

IRFR214TRL

MOSFET N-CH 250V 2.2A DPAK

Vishay Siliconix

5,531
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR224TRR Vishay Siliconix electronic component

IRFR224TRR

MOSFET N-CH 250V 3.8A DPAK

Vishay Siliconix

3,505
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR9014NTR Vishay Siliconix electronic component

IRFR9014NTR

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix

6,931
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR9014NTRR Vishay Siliconix electronic component

IRFR9014NTRR

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix

6,141
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR9014TRR Vishay Siliconix electronic component

IRFR9014TRR

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix

7,911
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR9120NTRR Infineon Technologies electronic component

IRFR9120NTRR

MOSFET P-CH 100V 6.6A DPAK

Infineon Technologies

3,134
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR9210TRR Vishay Siliconix electronic component

IRFR9210TRR

MOSFET P-CH 200V 1.9A DPAK

Vishay Siliconix

5,937
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR9214TRR Vishay Siliconix electronic component

IRFR9214TRR

MOSFET P-CH 250V 2.7A DPAK

Vishay Siliconix

2,285
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 3Ohm @ 1.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 220 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFSL31N20DTRL Vishay Siliconix electronic component

IRFSL31N20DTRL

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix

7,611
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
IRFSL31N20DTRR Vishay Siliconix electronic component

IRFSL31N20DTRR

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix

5,204
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK

FETs, MOSFETs Electronic Components

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