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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFP064 Vishay Siliconix electronic component

IRFP064

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix

7,948
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 9mOhm @ 78A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 7400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IRFP150 Vishay Siliconix electronic component

IRFP150

MOSFET N-CH 100V 41A TO247-3

Vishay Siliconix

8,664
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 10V 55mOhm @ 25A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IRFP254 Vishay Siliconix electronic component

IRFP254

MOSFET N-CH 250V 23A TO247-3

Vishay Siliconix

9,479
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 23A (Tc) 10V 140mOhm @ 14A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2700 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP354 Vishay Siliconix electronic component

IRFP354

MOSFET N-CH 450V 14A TO247-3

Vishay Siliconix

3,401
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 450 V 14A (Tc) 10V 350mOhm @ 8.4A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 2700 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP448 Vishay Siliconix electronic component

IRFP448

MOSFET N-CH 500V 11A TO247-3

Vishay Siliconix

2,570
RFQ

Datasheet

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP450A Vishay Siliconix electronic component

IRFP450A

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix

8,646
RFQ

Datasheet

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 2038 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP460A Vishay Siliconix electronic component

IRFP460A

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

9,522
RFQ

Datasheet

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 105 nC @ 10 V ±30V 3100 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFPC40 Vishay Siliconix electronic component

IRFPC40

MOSFET N-CH 600V 6.8A TO247-3

Vishay Siliconix

3,673
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFPC60 Vishay Siliconix electronic component

IRFPC60

MOSFET N-CH 600V 16A TO247-3

Vishay Siliconix

3,800
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 400mOhm @ 9.6A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 3900 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFR3303TR Infineon Technologies electronic component

IRFR3303TR

MOSFET N-CH 30V 33A DPAK

Infineon Technologies

5,982
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFU9120N Infineon Technologies electronic component

IRFU9120N

MOSFET P-CH 100V 6.6A IPAK

Infineon Technologies

8,508
RFQ

Datasheet

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRFZ30 Vishay Siliconix electronic component

IRFZ30

MOSFET N-CH 50V 30A TO220AB

Vishay Siliconix

6,597
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50 V 30A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFZ34 Vishay Siliconix electronic component

IRFZ34

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix

5,462
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFZ40 Vishay Siliconix electronic component

IRFZ40

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

5,518
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL2505S Infineon Technologies electronic component

IRL2505S

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies

9,206
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL3103STRL Infineon Technologies electronic component

IRL3103STRL

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies

3,475
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL3302S Infineon Technologies electronic component

IRL3302S

MOSFET N-CH 20V 39A D2PAK

Infineon Technologies

3,757
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
IRL540NSTRL Infineon Technologies electronic component

IRL540NSTRL

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies

6,361
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) - 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V - 1800 pF @ 25 V - - - - - Surface Mount D2PAK
IRL620 Vishay Siliconix electronic component

IRL620

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix

2,536
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 5V 800mOhm @ 3.1A, 5V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRL630 Vishay Siliconix electronic component

IRL630

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix

7,597
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB

FETs, MOSFETs Electronic Components

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