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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFZ24 Vishay Siliconix electronic component

IRFZ24

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix

 8,551
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFZ14 Vishay Siliconix electronic component

IRFZ14

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix

 3,859
RFQ

-

 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFBC20 Vishay Siliconix electronic component

IRFBC20

MOSFET N-CH 600V 2.2A TO220AB

Vishay Siliconix

 7,642
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFBC30 Vishay Siliconix electronic component

IRFBC30

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix

 8,634
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRF9Z10 Vishay Siliconix electronic component

IRF9Z10

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix

 2,242
RFQ

Datasheet

 		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF9Z34 Vishay Siliconix electronic component

IRF9Z34

MOSFET P-CH 60V 18A TO220AB

Vishay Siliconix

 7,310
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
ZVP2120A Diodes Incorporated electronic component

ZVP2120A

MOSFET P-CH 200V 120MA TO92-3

Diodes Incorporated

 3,825
RFQ

Datasheet

 		- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 200 V 120mA (Ta) 10V 25Ohm @ 150mA, 10V 3.5V @ 1mA - ±20V 100 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92
ZVP4105A Diodes Incorporated electronic component

ZVP4105A

MOSFET P-CH 50V 175MA TO92-3

Diodes Incorporated

 3,194
RFQ

Datasheet

 		- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 50 V 175mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 1mA - ±20V 40 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92
IRFI840G Vishay Siliconix electronic component

IRFI840G

MOSFET N-CH 500V 4.6A TO220-3

Vishay Siliconix

 2,498
RFQ

Datasheet

 		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.6A (Tc) 10V 850mOhm @ 2.8A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFP240 Vishay Siliconix electronic component

IRFP240

MOSFET N-CH 200V 20A TO247-3

Vishay Siliconix

 8,907
RFQ

-

 - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 180mOhm @ 12A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP264 Vishay Siliconix electronic component

IRFP264

MOSFET N-CH 250V 38A TO247-3

Vishay Siliconix

 3,041
RFQ

-

 - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 38A (Tc) 10V 75mOhm @ 23A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 5400 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP360 Vishay Siliconix electronic component

IRFP360

MOSFET N-CH 400V 23A TO247-3

Vishay Siliconix

 2,485
RFQ

-

 - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 23A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4500 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP440 Vishay Siliconix electronic component

IRFP440

MOSFET N-CH 500V 8.8A TO247-3

Vishay Siliconix

 9,302
RFQ

-

 - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.8A (Tc) 10V 850mOhm @ 5.3A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP450 Vishay Siliconix electronic component

IRFP450

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix

 5,058
RFQ

Datasheet

 		- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP460 Vishay Siliconix electronic component

IRFP460

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

 3,382
RFQ

Datasheet

 		- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFPE50 Vishay Siliconix electronic component

IRFPE50

MOSFET N-CH 800V 7.8A TO247-3

Vishay Siliconix

 7,737
RFQ

Datasheet

 		- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7.8A (Tc) 10V 1.2Ohm @ 4.7A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 3100 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFPF50 Vishay Siliconix electronic component

IRFPF50

MOSFET N-CH 900V 6.7A TO247-3

Vishay Siliconix

 2,542
RFQ

Datasheet

 		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.7A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2900 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP9240 Vishay Siliconix electronic component

IRFP9240

MOSFET P-CH 200V 12A TO247-3

Vishay Siliconix

 3,496
RFQ

-

 - TO-247-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFBE30 Vishay Siliconix electronic component

IRFBE30

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix

 7,855
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFBF20 Vishay Siliconix electronic component

IRFBF20

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix

 2,790
RFQ

Datasheet

 		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs Electronic Components

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