Hello! Welcome to Raywise Technologies Co.,Limited!

FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM60NB041PW Taiwan Semiconductor Corporation electronic component

TSM60NB041PW

600V, 78A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

2,916
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 78A (Tc) 10V 41mOhm @ 21.7A, 10V 4V @ 250µA 139 nC @ 10 V ±30V 6120 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
G3R30MT12J GeneSiC Semiconductor electronic component

G3R30MT12J

SIC MOSFET N-CH 96A TO263-7

GeneSiC Semiconductor

8,563
RFQ

Datasheet

G3R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 96A (Tc) 15V 36mOhm @ 50A, 15V 2.69V @ 12mA 155 nC @ 15 V ±15V 3901 pF @ 800 V - 459W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
IXFX180N10 IXYS electronic component

IXFX180N10

MOSFET N-CH 100V 180A PLUS247

IXYS

8,069
RFQ

Datasheet

HiPerFET™ TO-247-3 Variant Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 390 nC @ 10 V ±20V 10900 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
2N6660 Vishay Siliconix electronic component

2N6660

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

4,656
RFQ

Datasheet

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
2N6660-E3 Vishay Siliconix electronic component

2N6660-E3

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

5,074
RFQ

Datasheet

- TO-205AD, TO-39-3 Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
APT40SM120S Microsemi Corporation electronic component

APT40SM120S

SICFET N-CH 1200V 41A D3PAK

Microsemi Corporation

9,400
RFQ

-

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 3V @ 1mA (Typ) 130 nC @ 20 V +25V, -10V 2560 pF @ 1000 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT94N65B2C6 Microchip Technology electronic component

APT94N65B2C6

MOSFET N-CH 650V 95A T-MAX

Microchip Technology

5,780
RFQ

-

- TO-247-3 Variant Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 95A (Tc) 10V 35mOhm @ 35.2A, 10V 3.5V @ 3.5mA 320 nC @ 10 V ±20V 8140 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT41M80B2 Microchip Technology electronic component

APT41M80B2

MOSFET N-CH 800V 43A T-MAX

Microchip Technology

6,699
RFQ

Datasheet

POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 800 V 43A (Tc) 10V 210mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
IXFK44N55Q IXYS electronic component

IXFK44N55Q

MOSFET N-CH 550V 44A TO264AA

IXYS

6,155
RFQ

-

HiPerFET™, Q Class TO-264-3, TO-264AA Box Obsolete N-Channel MOSFET (Metal Oxide) 550 V 44A (Tc) 10V 120mOhm @ 22A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 6400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
APT6021BLLG Microchip Technology electronic component

APT6021BLLG

MOSFET N-CH 600V 29A TO247

Microchip Technology

8,681
RFQ

Datasheet

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) - 210mOhm @ 14.5A, 10V 5V @ 1mA 80 nC @ 10 V - 3470 pF @ 25 V - - - - - Through Hole TO-247 [B]
IXFN280N07 IXYS electronic component

IXFN280N07

MOSFET N-CH 70V 280A SOT-227B

IXYS

6,941
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 280A (Tc) 10V 5mOhm @ 120A, 10V 4V @ 8mA 420 nC @ 10 V ±20V 9400 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
DMWSH120H23SM3 Diodes Incorporated electronic component

DMWSH120H23SM3

LINEAR IC

Diodes Incorporated

6,663
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 100A (Tc) 15V, 18V 23mOhm @ 50A, 18V 3.6V @ 17.7mA 217 nC @ 18 V +22V, -10V 3962 pF @ 1000 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H23SM4 Diodes Incorporated electronic component

DMWSH120H23SM4

LINEAR IC

Diodes Incorporated

2,493
RFQ

-

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 100A (Tc) 15V, 18V 23mOhm @ 50A, 18V 3.6V @ 17.7mA 217 nC @ 18 V +22V, -10V 3962 pF @ 1000 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
UJ4SC075010L8SSR Qorvo electronic component

UJ4SC075010L8SSR

750V/10MO,SICFET,G4,TOLL

Qorvo

6,475
RFQ

Datasheet

- 8-PowerSFN Bulk Active N-Channel, Depletion Mode SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 556W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
IXFL60N60 IXYS electronic component

IXFL60N60

MOSFET N-CH 600V 60A ISOPLUS264

IXYS

6,899
RFQ

-

HiPerFET™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 80mOhm @ 30A, 10V 4V @ 8mA 380 nC @ 10 V ±20V 10000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS264™
IRFPS40N50L Vishay Siliconix electronic component

IRFPS40N50L

MOSFET N-CH 500V 46A SUPER247

Vishay Siliconix

5,067
RFQ

-

- TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
IXFK30N110P IXYS electronic component

IXFK30N110P

MOSFET N-CH 1100V 30A TO264AA

IXYS

2,642
RFQ

-

HiPerFET™, Polar TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1100 V 30A (Tc) 10V 360mOhm @ 15A, 10V 6.5V @ 1mA 235 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
APT10090SLLG Microchip Technology electronic component

APT10090SLLG

MOSFET N-CH 1000V 12A D3PAK

Microchip Technology

4,007
RFQ

Datasheet

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) - 900mOhm @ 6A, 10V 5V @ 1mA 71 nC @ 10 V - 1969 pF @ 25 V - - - - - Surface Mount D3PAK
IXFX140N60X3 Littelfuse Inc. electronic component

IXFX140N60X3

DISCRETE MOSFET 140A 600V X3 PLU

Littelfuse Inc.

2,111
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
APT8024LVRG Microsemi Corporation electronic component

APT8024LVRG

MOSFET N-CH 800V 33A TO264

Microsemi Corporation

4,535
RFQ

-

POWER MOS V® TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 240mOhm @ 16.5A, 10V 4V @ 2.5mA 425 nC @ 10 V - 7740 pF @ 25 V - - - - - Through Hole TO-264 [L]

FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions