Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH30RQ06L2Y-TR DIODE GEN PURP 600V 30A HU3PAK STMicroelectronics	823	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	HU3PAK	-40°C ~ 175°C
IDK12G65C5XTMA2 DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies	1,257	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	-	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
1N5614US DIODE GEN PURP 200V 1A D-5A Microchip Technology	250	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
IDL12G65C5XUMA2 DIODE SIL CARB 650V 12A VSON-4 Infineon Technologies	6,146	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
DSEI36-06AS-TUB DIODE GEN PURP 600V 37A TO263AA IXYS	1,403	RFQ	Datasheet	FRED	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	37A	1.6 V @ 37 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AA	-40°C ~ 150°C
C4D05120E-TR DIODE SIL CARB 1.2KV 19A TO252-2 Wolfspeed, Inc.	1,520	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	19A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	390pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
1N5550 DIODE GEN PURP 200V 3A AXIAL Microchip Technology	262	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
STTH75S12W DIODE GEN PURP 1.2KV 75A DO247 STMicroelectronics	295	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	75A	3.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	50 µA @ 1200 V	-	-	-	Through Hole	DO-247	-40°C ~ 175°C
VS-40EPS12-M3 DIODE GP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division	343	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	40A	1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
FFSP2065A DIODE SIL CARB 650V 25A TO220-2 onsemi	3,918	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	25A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DNA30E2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3,257	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 150°C
C3D08060G DIODE SIL CARB 600V 24A TO263-2 Wolfspeed, Inc.	205	RFQ	Datasheet	Z-Rec®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	24A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	441pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
VS-80APS12-M3 DIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division	3,977	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	80A	1.17 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
IDWD150E65E7XKSA1 DIODE GEN PURP 650V 200A TO247-2 Infineon Technologies	328	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	200A	2.1 V @ 150 A	Fast Recovery =< 500ns, > 5A (Io)	97 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
DPG60IM300PC-TRL DIODE GEN PURP 300V 60A TO263AA IXYS	1,956	RFQ	Datasheet	HiPerFRED²™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	300 V	60A	1.43 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	-	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
FFSM2065B DIODE SIL CARB 650V 23.4A 4PQFN onsemi	2,096	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23.4A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
STPSC10H12G2-TR DIODE SIL CARB 1.2KV 10A D2PAK STMicroelectronics	570	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
VS-60EPS08-M3 DIODE GP 800V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,185	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	800 V	60A	1.09 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-60EPS12-M3 DIODE GP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	408	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	1.09 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
FFSB2065BDN-F085 DIODE SIC 650V 23.6A D2PAK-3 onsemi	659	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	23.6A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

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Single Diodes Electronic Components

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