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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5617 Microchip Technology electronic component

JAN1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

 177
RFQ

Datasheet

 		- A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
DSEP30-06A IXYS electronic component

DSEP30-06A

DIODE GEN PURP 600V 30A TO247AD

IXYS

 990
RFQ

Datasheet

 		HiPerFRED™ TO-247-2 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 250 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
IDM08G120C5XTMA1 Infineon Technologies electronic component

IDM08G120C5XTMA1

DIODE SIL CARB 1.2KV 8A TO252-2

Infineon Technologies

 1,688
RFQ

Datasheet

 		CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 175°C
DNA30E2200PA IXYS electronic component

DNA30E2200PA

DIODE GEN PURP 2.2KV 30A TO220AC

IXYS

 219
RFQ

Datasheet

 		- TO-220-2 Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
1N5620 Microchip Technology electronic component

1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

 300
RFQ

Datasheet

 		- A, Axial Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Through Hole A, Axial -65°C ~ 200°C
STPSC10H065DI STMicroelectronics electronic component

STPSC10H065DI

DIODE SIC 650V 10A TO220AC INS

STMicroelectronics

 999
RFQ

Datasheet

 		- TO-220-2 Insulated, TO-220AC Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V - - - Through Hole TO-220AC ins -40°C ~ 175°C
IDW100E60FKSA1 Infineon Technologies electronic component

IDW100E60FKSA1

DIODE GP 600V 150A TO247-3-1

Infineon Technologies

 388
RFQ

Datasheet

 		- TO-247-3 Tube Active Standard 600 V 150A 2 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
C3D06065I Wolfspeed, Inc. electronic component

C3D06065I

DIODE SIL CARB 650V 13A TO220-2

Wolfspeed, Inc.

 970
RFQ

Datasheet

 		Z-Rec® TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 13A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 295pF @ 0V, 1MHz - - Through Hole TO-220-2 Isolated Tab -55°C ~ 175°C
C3D08060A Wolfspeed, Inc. electronic component

C3D08060A

DIODE SIL CARB 600V 24A TO220-2

Wolfspeed, Inc.

 357
RFQ

Datasheet

 		Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 24A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 441pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
1N3611 Microchip Technology electronic component

1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

 341
RFQ

Datasheet

 		- A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
VS-30EPH06-N3 Vishay General Semiconductor - Diodes Division electronic component

VS-30EPH06-N3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

 5,744
RFQ

Datasheet

 		FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 31 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
STPSC12065DY STMicroelectronics electronic component

STPSC12065DY

DIODE SIL CARB 650V 12A TO220AC

STMicroelectronics

 7,548
RFQ

Datasheet

 		ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 750pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
ISL9R3060G2-F085 onsemi electronic component

ISL9R3060G2-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

 418
RFQ

Datasheet

 		Stealth™ TO-247-2 Tube Active Avalanche 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1210TS Qorvo electronic component

UJ3D1210TS

DIODE SIL CARB 1.2KV 10A TO220-2

Qorvo

 8,990
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
DLA40IM800PC-TRL IXYS electronic component

DLA40IM800PC-TRL

DIODE GEN PURP 800V 40A TO263AA

IXYS

 1,266
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 40A 1.3 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
IDK08G120C5XTMA1 Infineon Technologies electronic component

IDK08G120C5XTMA1

DIODE SIC 1.2KV 22.8A TO263-1

Infineon Technologies

 373
RFQ

Datasheet

 		CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 22.8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) - 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
DSI30-16AS-TRL IXYS electronic component

DSI30-16AS-TRL

DIODE GEN PURP 1.6KV 30A TO263AA

IXYS

 2,638
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1600 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1600 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
DSEP29-12A IXYS electronic component

DSEP29-12A

DIODE GEN PURP 1.2KV 30A TO220AC

IXYS

 774
RFQ

Datasheet

 		HiPerFRED™ TO-220-2 Tube Active Standard 1200 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 250 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
JANTX1N3611 Microchip Technology electronic component

JANTX1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

 356
RFQ

Datasheet

 		- A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
DSEI30-10A IXYS electronic component

DSEI30-10A

DIODE GEN PURP 1KV 30A TO247AD

IXYS

 445
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 1000 V 30A 2.4 V @ 36 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 750 µA @ 1000 V - - - Through Hole TO-247AD -40°C ~ 150°C
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.

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