Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
HFA25PB60 DIODE GP 600V 25A TO247AC Vishay General Semiconductor - Diodes Division	2,225	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Obsolete	Standard	600 V	25A	1.7 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
JAN1N6638 DIODE GEN PURP 150V 300MA AXIAL Microchip Technology	2,367	RFQ	Datasheet	-	D, Axial	Bulk	Active	Standard	150 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 150 V	2.5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Through Hole	D-5D	-65°C ~ 175°C
CDLL645/TR DIODE GP 225V 400MA DO213AA Microchip Technology	3,163	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Standard	225 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 225 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
80EPF10 DIODE GEN PURP 1KV 80A TO247AC Vishay General Semiconductor - Diodes Division	6,716	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	1000 V	80A	1.35 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-65°C ~ 175°C
5099 DIODE GEN PURP 75V 150MA SOD123 Adafruit Industries LLC	6,088	RFQ	Datasheet	-	SOD-123	Bulk	Active	Standard	75 V	150mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 µA @ 100 V	-	-	-	Surface Mount	SOD-123	150°C
1N459AUR DIODE GP 200V 150MA DO213AA Microchip Technology	8,293	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	200 V	150mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 200 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
GC10MPS12-252 DIODE SIL CARB 1.2KV 50A TO252-2 GeneSiC Semiconductor	5,200	RFQ	Datasheet	SiC Schottky MPS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	50A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	660pF @ 1V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
VS-60APF02-M3 DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	7,124	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	200 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-60APF04-M3 DIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,021	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	400 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 400 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-60APF06-M3 DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,732	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-60APF10-M3 DIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division	5,598	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1000 V	60A	1.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-60EPF02-M3 DIODE GP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	9,795	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	200 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-60EPF04-M3 DIODE GP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division	6,180	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	400 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 400 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-60EPF10-M3 DIODE GP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division	7,514	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	60A	1.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
60EPF06 DIODE GP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	9,034	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	600 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
BYT30PI-1000RG DIODE GEN PURP 1KV 30A DOP3I STMicroelectronics	4,625	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Obsolete	Standard	1000 V	30A	1.9 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	165 ns	100 µA @ 1000 V	-	-	-	Through Hole	DOP3I	-40°C ~ 150°C
JAN1N4946 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	2,026	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	-	Military	MIL-PRF-19500/360	Through Hole	A, Axial	-65°C ~ 175°C
1N6643 DIODE GEN PURPOSE Microchip Technology	2,257	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 50 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JAN1N5621/TR DIODE GEN PURP 800V 1A Microchip Technology	3,206	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	500 nA @ 800 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
VS-97PF120 DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division	7,258	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1200 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C

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Single Diodes Electronic Components

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