Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JANTX1N5806/TR DIODE GEN PURP 150V 1A Microchip Technology	7,860	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N4249 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	5,851	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 1000 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N5621 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	3,676	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	500 nA @ 800 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
E3D08065G-TR SIC, SCHOTTKY DIODE, 8A, 650V, T Wolfspeed, Inc.	6,830	RFQ	Datasheet	E-Series	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	22A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	51 µA @ 650 V	369pF @ 0V, 1MHz	Automotive	-	Surface Mount	TO-263-2	-55°C ~ 175°C
60CPF02 DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	5,119	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	200 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
60EPF02 DIODE GP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	3,108	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	200 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
60EPF04 DIODE GP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division	6,185	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	400 V	60A	1.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 400 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
80EPS12 DIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division	3,599	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	1200 V	80A	1.17 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
CDLL1A60/TR DIODE SCHOTTKY 60V 1A DO213AB Microchip Technology	5,440	RFQ	Datasheet	-	DO-213AB, MELF	Tape & Reel (TR)	Active	Schottky	60 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	0.9pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-
SCS306AMC DIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor	6,403	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C (Max)
JAN1N5712-1/TR DIODE SCHOTTKY 16V 33MA DO35 Microchip Technology	5,698	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	16 V	33mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N5619E3/TR DIODE GEN PURP 600V 1A A AXIAL Microchip Technology	7,282	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 400 V	25pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 200°C
DMA10P1200HR DIODE GEN PURP 1.2KV 10A ISO247 IXYS	9,315	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	10A	1.23 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 1200 V	4pF @ 400V, 1MHz	-	-	Through Hole	ISO247	-55°C ~ 175°C
VS-12FL100S05 DIODE GEN PURP 1KV 12A DO203AA Vishay General Semiconductor - Diodes Division	6,730	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	1000 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 1000 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
VS-12FLR100S05 DIODE GP REV 1KV 12A DO203AA Vishay General Semiconductor - Diodes Division	3,703	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	1000 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 1000 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
1N5419 DIODE GEN PURP 500V 3A B SQ-MELF Microchip Technology	4,328	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 500 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
1N5803 DIODE GEN PURP 75V 1A AXIAL Microchip Technology	8,532	RFQ	Datasheet	-	A, Axial	Bulk	Obsolete	Standard	75 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 75 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-41HF80 DIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,677	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	800 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
VS-41HFR80 DIODE GP REV 800V 40A DO203AB Vishay General Semiconductor - Diodes Division	6,790	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
DSEP9-06CR DIODE GP 600V 9A ISOPLUS247 IXYS	4,919	RFQ	-	HiPerDynFRED™	TO-247-3	Tube	Obsolete	Standard	600 V	9A	4 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	50 µA @ 600 V	-	-	-	Through Hole	ISOPLUS247™	-55°C ~ 175°C

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Single Diodes Electronic Components

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