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Diode Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
MBR200200CTR GeneSiC Semiconductor electronic component

MBR200200CTR

DIODE MOD SCHOT 200V 100A 2TOWER

GeneSiC Semiconductor

3,793
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
QRD1210T30 Powerex Inc. electronic component

QRD1210T30

DIODE MODULE GP 1200V 53A MODULE

Powerex Inc.

4,929
RFQ

Datasheet

- Module Bulk Obsolete 1 Pair Series Connection Standard 1200 V 53A 3.5 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 mA @ 1200 V - - - Chassis Mount Module
DD200KB220 SanRex Corporation electronic component

DD200KB220

DIODE MODULE GEN PURP 2200V 200A

SanRex Corporation

3,266
RFQ

Datasheet

- Module Active 1 Pair Series Connection Standard 2200 V 200A 1.3 V @ 620 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 2200 V -40°C ~ 150°C - - Chassis Mount -
QRF0630R30 Powerex Inc. electronic component

QRF0630R30

DIODE MODULE GP 600V 210A MODULE

Powerex Inc.

7,544
RFQ

Datasheet

- Module Bulk Obsolete 1 Pair Common Anode Standard 600 V 210A (DC) 2.5 V @ 210 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 1 mA @ 600 V -40°C ~ 150°C - - Chassis Mount Module
QRC0630R30 Powerex Inc. electronic component

QRC0630R30

DIODE MODULE GP 600V 210A MODULE

Powerex Inc.

9,921
RFQ

Datasheet

- Module Bulk Obsolete 1 Pair Common Cathode Standard 600 V 210A (DC) 2.5 V @ 210 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 1 mA @ 600 V -40°C ~ 150°C - - Chassis Mount Module
MUR40005CT GeneSiC Semiconductor electronic component

MUR40005CT

DIODE MODULE GP 50V 200A 2TOWER

GeneSiC Semiconductor

8,974
RFQ

Datasheet

- Twin Tower Bulk Obsolete 1 Pair Common Cathode Standard 50 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40005CTR GeneSiC Semiconductor electronic component

MUR40005CTR

DIODE MODULE GP 50V 200A 2TOWER

GeneSiC Semiconductor

5,106
RFQ

Datasheet

- Twin Tower Bulk Obsolete 1 Pair Common Anode Standard 50 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MURT10040 GeneSiC Semiconductor electronic component

MURT10040

DIODE MODULE GP 400V 50A 3TOWER

GeneSiC Semiconductor

4,610
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10040R GeneSiC Semiconductor electronic component

MURT10040R

DIODE MODULE GP 400V 50A 3TOWER

GeneSiC Semiconductor

5,733
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Standard, Reverse Polarity 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10060 GeneSiC Semiconductor electronic component

MURT10060

DIODE MODULE GP 600V 50A 3TOWER

GeneSiC Semiconductor

4,834
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 50A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10060R GeneSiC Semiconductor electronic component

MURT10060R

DIODE MODULE GP 600V 50A 3TOWER

GeneSiC Semiconductor

4,971
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Standard, Reverse Polarity 600 V 50A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSC2X30SDA170J Microchip Technology electronic component

MSC2X30SDA170J

DIODE MOD SIC 1700V 30A SOT227

Microchip Technology

8,354
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active 2 Independent SiC (Silicon Carbide) Schottky 1700 V 30A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227 (ISOTOP®)
MBR30035CT GeneSiC Semiconductor electronic component

MBR30035CT

DIODE MOD SCHOTT 35V 150A 2TOWER

GeneSiC Semiconductor

8,856
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 35 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30035CTR GeneSiC Semiconductor electronic component

MBR30035CTR

DIODE MOD SCHOTT 35V 150A 2TOWER

GeneSiC Semiconductor

9,220
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 35 V 150A 700 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 35 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR300100CT GeneSiC Semiconductor electronic component

MBR300100CT

DIODE MOD SCHOT 100V 150A 2TOWER

GeneSiC Semiconductor

9,532
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 100 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR300100CTR GeneSiC Semiconductor electronic component

MBR300100CTR

DIODE MOD SCHOT 100V 150A 2TOWER

GeneSiC Semiconductor

2,001
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 100 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30020CT GeneSiC Semiconductor electronic component

MBR30020CT

DIODE MOD SCHOTT 20V 150A 2TOWER

GeneSiC Semiconductor

3,409
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 20 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30020CTR GeneSiC Semiconductor electronic component

MBR30020CTR

DIODE MOD SCHOTT 20V 150A 2TOWER

GeneSiC Semiconductor

9,044
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 20 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30030CT GeneSiC Semiconductor electronic component

MBR30030CT

DIODE MOD SCHOTT 30V 150A 2TOWER

GeneSiC Semiconductor

8,994
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 30 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30030CTR GeneSiC Semiconductor electronic component

MBR30030CTR

DIODE MOD SCHOTT 30V 150A 2TOWER

GeneSiC Semiconductor

7,837
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 30 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
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Diode Arrays Electronic Components

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