FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FCP165N65S3 POWER MOSFET, N-CHANNEL, SUPERFE onsemi	16,726	RFQ	Datasheet	SuperFET® III	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	19A (Tc)	10V	165mOhm @ 9.5A, 10V	4.5V @ 1.9mA	39 nC @ 10 V	±30V	1500 pF @ 400 V	-	154W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
AUIRF2903Z MOSFET N-CH 30V 160A TO220AB International Rectifier	2,150	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	160A (Tc)	10V	2.4mOhm @ 75A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	6320 pF @ 25 V	-	290W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
FCP165N65S3R0 FCP165N65S3R0 - POWER MOSFET, N- Fairchild Semiconductor	2,115	RFQ	Datasheet	SuperFET® III	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	19A (Tc)	10V	165mOhm @ 9.5A, 10V	4.5V @ 440mA	39 nC @ 10 V	±30V	1500 pF @ 400 V	-	154W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
AM90N15-20P MOSFET N-CH 150V 90A TO-220 Analog Power Inc.	2,300	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	90A (Ta)	5.5V, 10V	24mOhm @ 100A, 10V	1V @ 250µA	123 nC @ 5.5 V	±20V	9857 pF @ 15 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AM90N04-02P MOSFET N-CH 40V 232A TO-220 Analog Power Inc.	2,200	RFQ	-	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	232A (Tc)	4.5V, 10V	2.3mOhm @ 45A, 10V	1V @ 250µA	65 nC @ 4.5 V	±20V	7019 pF @ 15 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AUIRF3805L MOSFET N-CH 55V 160A TO262 International Rectifier	2,029	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	160A (Tc)	10V	3.3mOhm @ 75A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	7960 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFI3306GPBF IRFI3306G - 60V SINGLE N-CHANNEL International Rectifier	494	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	71A (Tc)	10V	4.2mOhm @ 43A, 10V	4V @ 1.037mA	135 nC @ 10 V	±20V	4685 pF @ 50 V	-	46W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220 Full Pack
PSMN6R3-120PS PSMN6R3-120PS - N-CHANNEL 120V S NXP Semiconductors	319	RFQ	Datasheet	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	120 V	70A (Ta)	10V	6.7mOhm @ 25A, 10V	4V @ 1mA	207.1 nC @ 10 V	±20V	11384 pF @ 60 V	-	405W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRFS4115TRL7PP IRFS4115 - 12V-300V N-CHANNEL PO International Rectifier	23,788	RFQ	Datasheet	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	105A (Tc)	10V	11.8mOhm @ 63A, 10V	5V @ 250µA	110 nC @ 10 V	±20V	5320 pF @ 50 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK (7-Lead)
HUF75631S3ST MOSFET N-CH 100V 33A D2PAK Fairchild Semiconductor	247	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	40mOhm @ 33A, 10V	4V @ 250µA	79 nC @ 20 V	±20V	1220 pF @ 25 V	-	120W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
FCPF11N60NT POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	14,218	RFQ	Datasheet	SuperMOS™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10.8A (Tc)	10V	299mOhm @ 5.4A, 10V	4V @ 250µA	35.6 nC @ 10 V	±30V	1505 pF @ 100 V	-	32.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
NP80N055MHE-S18-AY NP80N055MHE-S18-AY - SWITCHINGN- Renesas	2,400	RFQ	Datasheet	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	80A (Tc)	10V	11mOhm @ 40A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	3600 pF @ 25 V	-	1.8W (Ta), 120W (Tc)	175°C	-	-	Through Hole	MP-25K
2SK3057-AZ 2SK3057 - POWER TRS2 Renesas Electronics Corporation	2,378	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP80N055KLE-E1-AY NP80N055KLE-E1-AY - SWITCHINGN-C Renesas	1,600	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	80A (Tc)	4.5V, 10V	11mOhm @ 40A, 10V	2.5V @ 250µA	75 nC @ 10 V	±20V	4400 pF @ 25 V	-	1.8W (Ta), 120W (Tc)	175°C	-	-	Surface Mount	TO-263-3
AM90P06-20B MOSFET P-CH 60V 90A TO-263 Analog Power Inc.	600	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	60 V	90A (Tc)	4.5V, 10V	20mOhm @ 20A, 10V	1V @ 250µA	53 nC @ 4.5 V	±20V	2156 pF @ 15 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263
NDP708AE 60A, 80V, 0.022OHM, N-CHANNEL MO Fairchild Semiconductor	3,240	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRF4905L AUIRF4905 - 20V-150V P-CHANNEL A Infineon Technologies	1,077	RFQ	Datasheet	HEXFET®	TO-262	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	20mOhm @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	3500 pF @ 25 V	-	200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262
FCP21N60N FCP21N60 - N-CHANNEL, MOSFET onsemi	6,400	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3
RJK5012DPP-MG#T2 RJK5012DPP - N CHANNEL MOSFET Renesas	478	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	12A (Ta)	10V	620mOhm @ 6A, 10V	4.5V @ 1mA	29 nC @ 10 V	±30V	1100 pF @ 25 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220FN
2SK3714(0)-S12-AZ 2SK3714 - SWITCHING N-CHANNEL Renesas	7,805	RFQ	Datasheet	-	TO-220-3 Isolated Tab	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	4V, 10V	13mOhm @ 25A, 10V	2.5V @ 1mA	60 nC @ 10 V	±20V	3200 pF @ 10 V	-	2W (Ta), 35W (Tc)	150°C	-	-	Through Hole	MP-45F

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FETs, MOSFETs Electronic Components

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