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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
C3M0025065J1-TR Wolfspeed, Inc. electronic component

C3M0025065J1-TR

SIC, MOSFET 25 M, 650V TO-263-7X

Wolfspeed, Inc.

780
RFQ

Datasheet

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 80A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 109 nC @ 15 V +19V, -8V 2980 pF @ 400 V - 271W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
NVHL015N065SC1 onsemi electronic component

NVHL015N065SC1

SIC MOS TO247-3L 650V

onsemi

447
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 163A (Tc) 15V, 18V 18mOhm @ 75A, 12V 4.3V @ 25mA 283 nC @ 18 V +22V, -8V 4790 pF @ 325 V - 643W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
E3M0021120J2-TR Wolfspeed, Inc. electronic component

E3M0021120J2-TR

21m, 1200V SiC FET, TO-263-7 XL

Wolfspeed, Inc.

488
RFQ

Datasheet

E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 114A (Tc) 15V 29mOhm @ 62.12A, 15V 3.8V @ 17.1mA 169 nC @ 15 V +19V, -8V 5100 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
AIMZA75R008M1HXKSA1 Infineon Technologies electronic component

AIMZA75R008M1HXKSA1

AUTOMOTIVE_SICMOS

Infineon Technologies

240
RFQ

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 18 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-U02
IMZA75R008M1HXKSA1 Infineon Technologies electronic component

IMZA75R008M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

240
RFQ

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 500 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-U02
NCV81342CBATXG onsemi electronic component

NCV81342CBATXG

MOSFET

onsemi

1,000
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPD030N03LF2SATMA1 Infineon Technologies electronic component

IPD030N03LF2SATMA1

MOSFET N-CH 30V 160A DPAK

Infineon Technologies

2,000
RFQ

Datasheet

StrongIRFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 99A (Tc) 4.5V, 10V 3.05mOhm @ 60A, 10V 2.35V @ 40µA 50 nC @ 10 V ±20V 2200 pF @ 15 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-34
APT60M75L2FLLG Microchip Technology electronic component

APT60M75L2FLLG

MOSFET N-CH 600V 73A 264 MAX

Microchip Technology

82
RFQ

Datasheet

POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 75mOhm @ 36.5A, 10V 5V @ 5mA 195 nC @ 10 V ±30V 8930 pF @ 25 V - 893W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 264 MAX™ [L2]
C3M0016120K1 Wolfspeed, Inc. electronic component

C3M0016120K1

MOSFET N-CH 1200V 125A TO247-4L

Wolfspeed, Inc.

325
RFQ

Datasheet

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 125A (Tc) 15V 22mOhm @ 80.28A, 15V 3.8V @ 22.08mA 223 nC @ 15 V +19V, -8V 6922 pF @ 1000 V - 483W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
APL502B2G Microchip Technology electronic component

APL502B2G

MOSFET N-CH 500V 58A T-MAX

Microchip Technology

106
RFQ

Datasheet

- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 15V 90mOhm @ 29A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
DIW120SIC022-AQ Diotec Semiconductor electronic component

DIW120SIC022-AQ

SIC MOSFET, TO-247-3L, N, 120A,

Diotec Semiconductor

150
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
DIF120SIC022-AQ Diotec Semiconductor electronic component

DIF120SIC022-AQ

SIC MOSFET, TO-247-4L, N, 120A,

Diotec Semiconductor

150
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
TW015Z120C,S1F Toshiba Semiconductor and Storage electronic component

TW015Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 1

Toshiba Semiconductor and Storage

68
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C - - Through Hole TO-247-4L(X)
IXFN55N120SK IXYS electronic component

IXFN55N120SK

SIC AND MULTICHIP DISCRETE

IXYS

182
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 54A (Tc) 15V 42mOhm @ 40A, 15V 3.6V @ 12mA 107 nC @ 15 V +15V, -4V 3360 pF @ 1000 V - - -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
DIW120SIC023-AQ Diotec Semiconductor electronic component

DIW120SIC023-AQ

MOSFET TO-247-3L N 130A 1200V

Diotec Semiconductor

705
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 125A (Tc) 18V 23mOhm @ 75A, 18V 2.9V @ 250µA 45 nC @ 18 V - 6150 pF @ 1000 V - 600W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
DF17MR12W1M1HFB68BPSA1 Infineon Technologies electronic component

DF17MR12W1M1HFB68BPSA1

LOW POWER EASY

Infineon Technologies

33
RFQ

Datasheet

EasyPACK™ Module Tray Active N-Channel SiCFET (Silicon Carbide) 1200 V 45A (Tj) 15V, 18V 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149 nC @ 18 V +20V, -7V 4400 pF @ 800 V - - -40°C ~ 175°C (TJ) - - Chassis Mount -
CDA04N30X1C EPC Space, LLC electronic component

CDA04N30X1C

GANFET 40V 30A .004 OHM 4DAPT

EPC Space, LLC

88
RFQ

-

- - Tray Active - - - - - - - - - - - - - - - - -
CDA10N30X1C EPC Space, LLC electronic component

CDA10N30X1C

GANFET 100V 30A .009 OHM 4DAPT

EPC Space, LLC

100
RFQ

-

- - Tray Active - - - - - - - - - - - - - - - - -
CDA10N05X2C EPC Space, LLC electronic component

CDA10N05X2C

GANFET 100V 5A .030 OHM 4DAPT

EPC Space, LLC

100
RFQ

-

- - Tray Active - - - - - - - - - - - - - - - - -
CDA20N18X3C EPC Space, LLC electronic component

CDA20N18X3C

GANFET 200V 18A .025 OHM 4DAPT

EPC Space, LLC

64
RFQ

-

- - Tray Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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