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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NVBG040N120M3S onsemi electronic component

NVBG040N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

760
RFQ

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 57A (Tc) 18V 54mOhm @ 20A, 18V 4.4V @ 10mA 75 nC @ 18 V +22V, -10V 1700 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
AIMZHN120R040M1TXKSA1 Infineon Technologies electronic component

AIMZHN120R040M1TXKSA1

SIC_DISCRETE

Infineon Technologies

240
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V, 20V 50mOhm @ 20A, 20V 5.1V @ 6.4mA 43 nC @ 20 V +23V, -5V 1264 pF @ 800 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
G3F25MT12J-TR GeneSiC Semiconductor electronic component

G3F25MT12J-TR

1200V 25M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 87A (Tc) 18V 34mOhm @ 34A, 18V 4.3V @ 24mA 128 nC @ 18 V +22V, -10V 3325 pF @ 800 V - 362W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
IMT40R011M2HXTMA1 Infineon Technologies electronic component

IMT40R011M2HXTMA1

SIC-MOS

Infineon Technologies

1,927
RFQ

Datasheet

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 13.4A (Ta), 144A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V 5.6V @ 13.3mA 85 nC @ 18 V +23V, -7V 3770 pF @ 200 V - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
SCT3030ARC15 Rohm Semiconductor electronic component

SCT3030ARC15

650V, 70A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

386
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) - - Through Hole TO-247-4L
IMZC120R017M2HXKSA1 Infineon Technologies electronic component

IMZC120R017M2HXKSA1

IMZC120R017M2HXKSA1

Infineon Technologies

240
RFQ

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 97A (Tc) 15V, 18V 17mOhm @ 40A, 18V 5.1V @ 12.7mA 89 nC @ 18 V +23V, -7V 2910 pF @ 800 V - 382W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
NVH4L027N65S3F onsemi electronic component

NVH4L027N65S3F

SF3 FRFET AUTO 27MOHM TO-247-4L

onsemi

799
RFQ

Datasheet

SuperFET® III, FRFET® TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 227 nC @ 10 V ±30V 7780 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
C3M0045065J1-TR Wolfspeed, Inc. electronic component

C3M0045065J1-TR

SIC, MOSFET 45M, 650V TO-263-7XL

Wolfspeed, Inc.

730
RFQ

Datasheet

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 61 nC @ 15 V +19V, -8V 1621 pF @ 400 V - 147W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
G3F25MT12K GeneSiC Semiconductor electronic component

G3F25MT12K

1200V 25M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

595
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
SCT3030ARHRC15 Rohm Semiconductor electronic component

SCT3030ARHRC15

650V, 70A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

448
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
AIMBG120R030M1XTMA1 Infineon Technologies electronic component

AIMBG120R030M1XTMA1

SIC_DISCRETE

Infineon Technologies

1,708
RFQ

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 70A (Tc) 18V, 20V 38mOhm @ 27A, 20V 5.1V @ 8.6mA 57 nC @ 20 V +23V, -5V 1738 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
SCT3040KRC15 Rohm Semiconductor electronic component

SCT3040KRC15

1200V, 55A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

370
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) - - Through Hole TO-247-4L
AIMZA75R020M1HXKSA1 Infineon Technologies electronic component

AIMZA75R020M1HXKSA1

AUTOMOTIVE_SICMOS

Infineon Technologies

190
RFQ

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 75A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +23V, -5V 2217 pF @ 500 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
NSF030120D7A0J Nexperia USA Inc. electronic component

NSF030120D7A0J

NSF030120D7A0/SOT8070/TO263-7L

Nexperia USA Inc.

800
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NSF030120L3A0Q Nexperia USA Inc. electronic component

NSF030120L3A0Q

NSF030120L3A0/SOT429-2/TO247-3

Nexperia USA Inc.

450
RFQ

Datasheet

- - Tube Active - - - - - - - - - - - - - - - - -
IMBG65R015M2HXTMA1 Infineon Technologies electronic component

IMBG65R015M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,000
RFQ

Datasheet

CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 115A (Tc) 15V, 20V 18mOhm @ 64.2A, 18V 5.6V @ 13mA 79 nC @ 18 V +23V, -7V 2792 pF @ 400 V - 416W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
SCT3040KRHRC15 Rohm Semiconductor electronic component

SCT3040KRHRC15

1200V, 55A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

395
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
NSF030120L4A0Q Nexperia USA Inc. electronic component

NSF030120L4A0Q

NSF030120L4A0/SOT8071/TO247-4L

Nexperia USA Inc.

450
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
NSF040120L3A0Q Nexperia USA Inc. electronic component

NSF040120L3A0Q

SIC MOSFET / 40MOHM / 1200V / TO

Nexperia USA Inc.

412
RFQ

Datasheet

- - Tube Active - - - - - - - - - - - - - - - - -
AOK033V120X2Q Alpha & Omega Semiconductor Inc. electronic component

AOK033V120X2Q

1200V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

209
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +15V, -5V 2908 pF @ 800 V - 300W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
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FETs, MOSFETs Electronic Components

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