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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AOM015V65X2 Alpha & Omega Semiconductor Inc. electronic component

AOM015V65X2

650V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

238
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 96A (Tc) 15V 22mOhm @ 24A, 15V 3.5V @ 24mA 152 nC @ 15 V +15V, -5V 4880 pF @ 400 V - 312W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
AOK015V65X2 Alpha & Omega Semiconductor Inc. electronic component

AOK015V65X2

650V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

238
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 96A (Tc) 15V 22mOhm @ 24A, 15V 3.5V @ 24mA 152 nC @ 15 V +15V, -5V 4880 pF @ 400 V - 312W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247
C3M0025075K1 Wolfspeed, Inc. electronic component

C3M0025075K1

SICFET N-CH 750V 80A TO247

Wolfspeed, Inc.

184
RFQ

Datasheet

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 80A (Ta) 15V 34mOhm @ 33.5A, 15V 3.8V @ 9.22mA 119 nC @ 15 V -8V, +19V 3055 pF @ 500 V - 262W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
NVHL025N065SC1 onsemi electronic component

NVHL025N065SC1

SIC MOS TO247-3L 650V

onsemi

450
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
NSF040120L4A0Q Nexperia USA Inc. electronic component

NSF040120L4A0Q

NSF040120L4A0/SOT8071/TO247-4L

Nexperia USA Inc.

432
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tj) 15V, 18V 60mOhm @ 40A, 15V 2.9V @ 4mA 95 nC @ 15 V +22V, -10V 2600 pF @ 800 V - 306W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247
NVH4L025N065SC1 onsemi electronic component

NVH4L025N065SC1

SIC MOS TO247-4L 650V

onsemi

882
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
IPQC60R010S7XTMA1 Infineon Technologies electronic component

IPQC60R010S7XTMA1

MOSFET

Infineon Technologies

750
RFQ

Datasheet

CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.08mA 318 nC @ 12 V ±20V - - 694W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
NTHL019N60S5F onsemi electronic component

NTHL019N60S5F

SUPERFET5 FRFET, 19MOHM, TO-247-

onsemi

442
RFQ

Datasheet

SuperFET® V, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 19mOhm @ 37.5A,10V 4.8V @ 15.7mA 252 nC @ 10 V ±30V 13400 pF @ 400 V - 568W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
E3M0040120J2-TR Wolfspeed, Inc. electronic component

E3M0040120J2-TR

40m, 1200V SiC FET, TO-263-7 XL

Wolfspeed, Inc.

736
RFQ

Datasheet

E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 15V 53mOhm @ 31.9A, 15V 3.8V @ 8.77mA 91 nC @ 15 V +19V, -8V 2726 pF @ 1000 V - 294W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
AOM020V120X2 Alpha & Omega Semiconductor Inc. electronic component

AOM020V120X2

1200V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

230
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 15V 28mOhm @ 27A, 15V 2.8V @ 27mA 166 nC @ 15 V +18V, -8V 5180 pF @ 800 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
S2M0016120D-1 SMC Diode Solutions electronic component

S2M0016120D-1

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 140A (Tc) 18V, 20V 23mOhm @ 75A, 20V 3.6V @ 23mA 285 nC @ 20 V +20V, -5V 4540 pF @ 1000 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
NVH4L030N120M3S onsemi electronic component

NVH4L030N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

393
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
S2M0016120K-1 SMC Diode Solutions electronic component

S2M0016120K-1

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

147
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 140A (Tc) 18V, 20V 23mOhm @ 75A, 20V 3.6V @ 23mA 285 nC @ 20 V +20V, -5V 4540 pF @ 1000 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
TSG65N068CE RVG Taiwan Semiconductor Corporation electronic component

TSG65N068CE RVG

650V, 30A, PDFN88, E-MODE GAN TR

Taiwan Semiconductor Corporation

2,962
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
C3M0065100J-TR Wolfspeed, Inc. electronic component

C3M0065100J-TR

SICFET N-CH 1000V 35A TO263-7

Wolfspeed, Inc.

788
RFQ

Datasheet

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +15V, -4V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
G3F20MT12J-TR GeneSiC Semiconductor electronic component

G3F20MT12J-TR

1200V 20M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 108A (Tc) 18V 26.5mOhm @ 40A, 18V 4.3V @ 30mA 176 nC @ 18 V +22V, -10V 4317 pF @ 800 V - 448W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
IMZA75R016M1HXKSA1 Infineon Technologies electronic component

IMZA75R016M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

210
RFQ

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 89A (Tj) 15V, 20V 15mOhm @ 41.5A, 20V 5.6V @ 14.9mA 81 nC @ 18 V +23V, -5V 2869 pF @ 500 V - 319W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AIMZA75R016M1HXKSA1 Infineon Technologies electronic component

AIMZA75R016M1HXKSA1

SICFET N-CH 750V 89A PG-TO247-4

Infineon Technologies

213
RFQ

Datasheet

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 89A (Tc) 15V, 20V 22mOhm @ 41.5A, 18V 5.6V @ 14.9mA 81 nC @ 18 V +23V, -5V 2869 pF @ 500 V - 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
DIF120SIC053-AQ Diotec Semiconductor electronic component

DIF120SIC053-AQ

MOSFET TO-247-4L N 65A 1200V

Diotec Semiconductor

433
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 18V 53mOhm @ 33A, 18V 4V @ 9.5mA 121 nC @ 15 V - 2070 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
DIW120SIC059-AQ Diotec Semiconductor electronic component

DIW120SIC059-AQ

MOSFET TO-247-3L N 65A 1200V

Diotec Semiconductor

430
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 18V 53mOhm @ 33A, 18V 4V @ 9.5mA 121 nC @ 15 V - 2070 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
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FETs, MOSFETs Electronic Components

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