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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NTH4L030N120M3S onsemi electronic component

NTH4L030N120M3S

SILICON CARBIDE (SIC) MOSFET EL

onsemi

422
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
NVH040N65S3F onsemi electronic component

NVH040N65S3F

SF3 FRFET AUTO 40MOHM TO-247

onsemi

412
RFQ

Datasheet

SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 153 nC @ 10 V ±30V 5875 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SICW025N065H-BP Micro Commercial Co electronic component

SICW025N065H-BP

SIC MOSFET,TO-247AB

Micro Commercial Co

360
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 107A (Tc) 18V 30mOhm @ 50A, 18V 4.5V @ 50mA 275 nC @ 18 V +22V, -10V 5740 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
STH12N120K5-2AG STMicroelectronics electronic component

STH12N120K5-2AG

AUTOMOTIVE-GRADE N-CHANNEL 1200

STMicroelectronics

998
RFQ

Datasheet

MDmesh™ K5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount H2PAK-2
S2M0040120D-1 SMC Diode Solutions electronic component

S2M0040120D-1

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

299
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
NSF080120L3A0Q Nexperia USA Inc. electronic component

NSF080120L3A0Q

SIC MOSFET / 80MOHM / 1200V / TO

Nexperia USA Inc.

420
RFQ

Datasheet

- - Tube Active - - - - - - - - - - - - - - - - -
G3F45MT06D GeneSiC Semiconductor electronic component

G3F45MT06D

650V 40M TO-247-3 G3F SIC MOSFET

GeneSiC Semiconductor

600
RFQ

-

- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V - - - - - - - - - - - - Through Hole TO-247-3
GS-065-030-6-LL-MR Infineon Technologies electronic component

GS-065-030-6-LL-MR

GAN POWER TRANSISTOR

Infineon Technologies

195
RFQ

Datasheet

- 8-PowerSFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 40A (Tc) 6V 58mOhm @ 5.5A, 6V 2.6V @ 7.5mA 6.7 nC @ 6 V +7V, -10V 235 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount TOLL
C3M0045075K1 Wolfspeed, Inc. electronic component

C3M0045075K1

SICFET N-CH 750V 42A TO247

Wolfspeed, Inc.

167
RFQ

Datasheet

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 42A (Tc) 15V 60mOhm @ 17.6A, 15V 3.8V @ 4.84mA 65 nC @ 15 V -8V, +19V 1606 pF @ 500 V - 139W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
IPWS65R022CFD7AXKSA1 Infineon Technologies electronic component

IPWS65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies

238
RFQ

Datasheet

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±30V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-31
S3M0040120D SMC Diode Solutions electronic component

S3M0040120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
S2M0040120K-1 SMC Diode Solutions electronic component

S2M0040120K-1

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
IPDQ60R025CFD7XTMA1 Infineon Technologies electronic component

IPDQ60R025CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

725
RFQ

Datasheet

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 10V 25mOhm @ 32.6A, 10V 4.5V @ 1.63mA 141 nC @ 10 V ±20V 5626 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
G3F33MT06J-TR GeneSiC Semiconductor electronic component

G3F33MT06J-TR

650V 27M TO-263-7 G3F SIC MOSFET

GeneSiC Semiconductor

800
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 80A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 261W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F45MT06K GeneSiC Semiconductor electronic component

G3F45MT06K

650V 40M TO-247-4 G3F SIC MOSFET

GeneSiC Semiconductor

600
RFQ

-

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
AIMZHN120R080M1TXKSA1 Infineon Technologies electronic component

AIMZHN120R080M1TXKSA1

SIC_DISCRETE

Infineon Technologies

233
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
SCT055HU65G3AG STMicroelectronics electronic component

SCT055HU65G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

523
RFQ

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 15V, 18V 72mOhm @ 15A, 18V 4.2V @ 1mA 29 nC @ 18 V +22V, -10V 721 pF @ 400 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount HU3PAK
STY60NK30Z STMicroelectronics electronic component

STY60NK30Z

MOSFET N-CH 300V 60A MAX247

STMicroelectronics

490
RFQ

Datasheet

SuperMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 100µA 220 nC @ 10 V ±30V 7200 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Through Hole MAX247™
NSF060120D7A0J Nexperia USA Inc. electronic component

NSF060120D7A0J

NSF060120D7A0/SOT8070/TO263-7L

Nexperia USA Inc.

800
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NSF060120L3A0Q Nexperia USA Inc. electronic component

NSF060120L3A0Q

NSF060120L3A0/SOT429-2/TO247-3

Nexperia USA Inc.

450
RFQ

Datasheet

- - Tube Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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