Hello! Welcome to Raywise Technologies Co.,Limited!
Hello! Welcome to Raywise Technologies Co.,Limited!
BOM Upload
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCTWA35N65G2V-4DISCRETE |
600 |
|
Datasheet |
- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +18V, -5V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
NTHL030N120M3SSILICON CARBIDE (SIC) MOSFET EL |
351 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IMW65R033M2HXKSA1IMW65R033M2HXKSA1 |
369 |
|
Datasheet |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 53A (Tc) | 15V, 20V | 30mOhm @ 27.9A, 20V | 5.6V @ 5.7mA | 34 nC @ 18 V | +23V, -7V | 1214 pF @ 400 V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
|
|
TSM60NE048PW C0GMOSFET |
300 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V, 12V | 44mOhm @ 20A, 12V | 6V @ 4.6mA | 114 nC @ 10 V | ±30V | 5023 pF @ 300 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AOM065V120X21200V SILICON CARBIDE MOSFET |
238 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 62.3 nC @ 15 V | +18V, -8V | 1716 pF @ 800 V | - | 187.5W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
IMT40R015M2HXTMA1SIC-MOS |
1,942 |
|
Datasheet |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 11.7A (Ta), 111A (Tc) | 15V, 18V | 19.1mOhm @ 27.1A, 18V | 5.6V @ 9.7mA | 62 nC @ 18 V | +23V, -7V | 2730 pF @ 200 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
GAN039-650NTBJGAN CASCODE FETS |
948 |
|
- |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 58.5A (Ta) | 10V | 39mOhm @ 32A, 10V | 4.6V @ 1mA | 26 nC @ 10 V | ±20V | 1980 pF @ 400 V | - | 250W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
|
R6086YNZ4C13NCH 600V 86A, TO-247, POWER MOSF |
521 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 86A (Tc) | 10V, 12V | 44mOhm @ 17A, 12V | 6V @ 4.6mA | 110 nC @ 10 V | ±30V | 5100 pF @ 100 V | - | 781W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
|
|
IPDQ60R016CM8XTMA1IPDQ60R016CM8XTMA1 |
720 |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 135A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
|
|
SCT3080KRHRC151200V, 31A, 4-PIN THD, TRENCH-ST |
440 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
IPDQ60R022S7AXTMA1MOSFET |
750 |
|
Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | ±20V | 5640 pF @ 300 V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
|
NVHL060N090SC1SICFET N-CH 900V 46A TO247-3 |
383 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +19V, -10V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
SCT3060ARHRC15650V, 39A, 4-PIN THD, TRENCH-STR |
446 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
NSF080120L4A0QNSF080120L4A0/SOT8071/TO247-4L |
446 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 15V, 18V | 120mOhm @ 20A, 15V | 2.9V @ 2mA | 52 nC @ 15 V | +22V, -10V | 1335 pF @ 800 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AIMZA75R040M1HXKSA1IGBT |
229 |
|
Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tj) | 15V, 20V | 37mOhm @ 16.6A, 20V | 5.6V @ 6mA | 34 nC @ 18 V | +23V, -5V | 1135 pF @ 500 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
|
|
IMZA65R033M2HXKSA1IMZA65R033M2HXKSA1 |
390 |
|
Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 53A (Tc) | 15V, 20V | 30mOhm @ 27.9A, 20V | 5.6V @ 5.7mA | 34 nC @ 18 V | +23V, -7V | 1214 pF @ 400 V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
|
|
IMBG40R015M2HXTMA1SIC-MOS |
939 |
|
Datasheet |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 11.7A (Ta), 111A (Tc) | 15V, 18V | 19.1mOhm @ 27.1A, 18V | 5.6V @ 9.7mA | 62 nC @ 18 V | +23V, -7V | 2730 pF @ 200 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
|
|
SCT3060ARC15650V, 39A, 4-PIN THD, TRENCH-STR |
427 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tj) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
SCT3080KRC151200V, 31A, 4-PIN THD, TRENCH-ST |
365 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tj) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
NVHL040N65S3HFSUPERFER3 FRFET AUTOMOTIVE 40MOH |
430 |
|
Datasheet |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 157 nC @ 10 V | ±30V | 6655 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
FETs, MOSFETs Electronic Components
Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.
Frequently Asked Questions
Q1: What products are included in FETs, MOSFETs?
This category includes related FETs, MOSFETs subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.
Q2: Can I request a quotation for FETs, MOSFETs components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.
Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.
Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.