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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AIMZA75R060M1HXKSA1AUTOMOTIVE_SICMOS |
239 |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 32A (Tj) | 15V, 20V | 55mOhm @ 11.1A, 20V | 5.6V @ 4mA | 23 nC @ 18 V | +23V, -5V | 779 pF @ 500 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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SCT4045DWATL750V, 31A, 7-PIN SMD, TRENCH-STR |
976 |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 31A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | - | 175°C (TJ) | - | - | Surface Mount | TO-263-7LA |
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G3F75MT12K1200V 75M TO-247-4 G3F SIC MOSFE |
600 |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 30A (Tc) | 18V | 100mOhm @ 12A, 18V | 4.3V @ 9mA | 48 nC @ 18 V | +22V, -10V | 988 pF @ 800 V | - | 127W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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CDFG6558N TR13 PBFREESURFACE MOUNT MOSFET |
2,480 |
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- |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | GaNFET (Gallium Nitride) | 650 V | 29A (Tc) | 6V | 80mOhm @ 8A, 6V | 2.5V @ 30.7mA | 6.2 nC @ 0 V | +7V, -6V | 225 pF @ 400 V | - | 1.1W (Ta), 188W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (8x8) |
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NVMTS0D7N06CTXGMOSFET N-CH 60V 60.5A/464A 8DFNW |
2,635 |
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Datasheet |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60.5A (Ta), 464A (Tc) | 10V | 0.72mOhm @ 50A, 10V | 4V @ 250µA | 152 nC @ 10 V | ±20V | 11535 pF @ 30 V | - | 5W (Ta), 294.6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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STWA60N043DM9N-CHANNEL 600 V, 38 MOHM TYP., 5 |
144 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 56A (Tc) | 10V | 43mOhm @ 28A, 10V | 4.5V @ 250µA | 78.6 nC @ 10 V | ±30V | 4675 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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STW69N65M5MOSFET N-CH 650V 58A TO247 |
477 |
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Datasheet |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±25V | 6420 pF @ 100 V | - | 330W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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MXB12R600DPHFCMOSFET N-CH 600V 15A |
243 |
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Datasheet |
- | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS i4-PAC™ |
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IPDQ65R029CFD7XTMA1HIGH POWER_NEW |
734 |
|
Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 85A (Tc) | 10V | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 139 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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NVH4L095N065SC1SILICON CARBIDE (SIC) MOSFET, NC |
445 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 31A (Tc) | 15V, 18V | 105mOhm @ 12A, 18V | 4.3V @ 4mA | 50 nC @ 18 V | +22V, -8V | 956 pF @ 325 V | - | 129W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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IMZA75R040M1HXKSA1SILICON CARBIDE MOSFET |
235 |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tj) | 15V, 20V | 37mOhm @ 16.6A, 20V | 5.6V @ 6mA | 34 nC @ 18 V | +23V, -5V | 1135 pF @ 500 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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AIMCQ120R060M1TXTMA1SIC_DISCRETE |
850 |
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- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 44A (Tc) | 18V, 20V | 75mOhm @ 13A, 20V | 5.1V @ 4.3mA | 32 nC @ 20 V | +25V, -10V | 880 pF @ 800 V | - | 259W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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G3F60MT06D650V 55M TO-247-3 G3F SIC MOSFET |
600 |
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- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT4062KWATL1200V, 24A, 7-PIN SMD, TRENCH-ST |
999 |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | - | 175°C (TJ) | - | - | Surface Mount | TO-263-7LA |
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SCT4045DWAHRTL750V, 31A, 7-PIN SMD, TRENCH-STR |
990 |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 31A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7LA |
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SCT4062KWAHRTL1200V, 24A, 7-PIN SMD, TRENCH-ST |
956 |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 93W | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7LA |
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MSC080SMA120SCT/RMOSFET SIC 1200 V 80 MOHM PSMT |
1,300 |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MSC080SMA120SDT/RMOSFET SIC 1200 V 80 MOHM TO-263 |
800 |
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Datasheet |
mSiC™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
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G3F60MT06K650V 55M TO-247-4 G3F SIC MOSFET |
600 |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 42A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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AIMZH120R160M1TXKSA1SIC_DISCRETE |
207 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.5mA | 14 nC @ 20 V | +23V, -5V | 350 pF @ 800 V | - | 109W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-11 |
FETs, MOSFETs Electronic Components
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