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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
C2M0080170P Wolfspeed, Inc. electronic component

C2M0080170P

SICFET N-CH 1700V 40A TO247-4

Wolfspeed, Inc.

3,763
RFQ

-

C2M™ TO-247-4 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 1700 V 40A (Tc) 20V 125mOhm @ 28A, 20V 4V @ 10mA 120 nC @ 20 V +25V, -10V 2250 pF @ 1000 V - 277W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
APT58M50J Microchip Technology electronic component

APT58M50J

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology

9,375
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT20M22JVR Microchip Technology electronic component

APT20M22JVR

MOSFET N-CH 200V 97A ISOTOP

Microchip Technology

9,590
RFQ

Datasheet

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) - 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V - 10200 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT10035LFLLG Microchip Technology electronic component

APT10035LFLLG

MOSFET N-CH 1000V 28A TO264

Microchip Technology

9,822
RFQ

Datasheet

POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) - 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V - 5185 pF @ 25 V - - - - - Through Hole TO-264 [L]
APT10M11JVRU2 Microchip Technology electronic component

APT10M11JVRU2

MOSFET N-CH 100V 142A SOT227

Microchip Technology

2,342
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 142A (Tc) 10V 11mOhm @ 71A, 10V 4V @ 2.5mA 300 nC @ 10 V ±30V 8600 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT10M11JVRU3 Microchip Technology electronic component

APT10M11JVRU3

MOSFET N-CH 100V 142A SOT227

Microchip Technology

4,243
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 142A (Tc) 10V 11mOhm @ 71A, 10V 4V @ 2.5mA 300 nC @ 10 V ±30V 8600 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT10035B2FLLG Microchip Technology electronic component

APT10035B2FLLG

MOSFET N-CH 1000V 28A T-MAX

Microchip Technology

4,190
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V ±30V 5185 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT20M22JVRU2 Microchip Technology electronic component

APT20M22JVRU2

MOSFET N-CH 200V 97A SOT227

Microchip Technology

6,223
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT20M22JVRU3 Microchip Technology electronic component

APT20M22JVRU3

MOSFET N-CH 200V 97A SOT227

Microchip Technology

8,545
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
HCT7000MTX TT Electronics/Optek Technology electronic component

HCT7000MTX

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology

6,057
RFQ

Datasheet

- 3-SMD, No Lead Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-SMD
APTM120DA56T1G Microsemi Corporation electronic component

APTM120DA56T1G

MOSFET N-CH 1200V 18A SP1

Microsemi Corporation

2,652
RFQ

-

- SP1 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 390W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM120SK56T1G Microsemi Corporation electronic component

APTM120SK56T1G

MOSFET N-CH 1200V 18A SP1

Microsemi Corporation

9,088
RFQ

Datasheet

- SP1 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 390W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP1
IXFE36N100 IXYS electronic component

IXFE36N100

MOSFET N-CH 1000V 33A SOT227B

IXYS

3,486
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 33A (Tc) 10V 240mOhm @ 18A, 10V 5.5V @ 8mA 455 nC @ 10 V ±20V 15000 pF @ 25 V - 580W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
MMIX1F360N15T2 IXYS electronic component

MMIX1F360N15T2

MOSFET N-CH 150V 235A 24SMPD

IXYS

4,165
RFQ

Datasheet

GigaMOS™, TrenchT2™ 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 150 V 235A (Tc) 10V 4.4mOhm @ 100A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 24-SMPD
APT32M80J Microchip Technology electronic component

APT32M80J

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology

8,366
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 190mOhm @ 24A, 10V 5V @ 2.5mA 303 nC @ 10 V ±30V 9326 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT47M60J Microchip Technology electronic component

APT47M60J

MOSFET N-CH 600V 49A ISOTOP

Microchip Technology

5
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) 10V 90mOhm @ 33A, 10V 5V @ 2.5mA 330 nC @ 10 V ±30V 13190 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT58F50J Microchip Technology electronic component

APT58F50J

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology

3,336
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT20M18LVFRG Microchip Technology electronic component

APT20M18LVFRG

MOSFET N-CH 200V 100A TO264

Microchip Technology

5,584
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - - - Through Hole TO-264 [L]
APT8020B2FLLG Microchip Technology electronic component

APT8020B2FLLG

MOSFET N-CH 800V 38A T-MAX

Microchip Technology

7,910
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) - 220mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - - - - Through Hole T-MAX™ [B2]
APT50M75JLLU3 Microchip Technology electronic component

APT50M75JLLU3

MOSFET N-CH 500V 51A SOT227

Microchip Technology

4,801
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 25.5A, 10V 5V @ 1mA 123 nC @ 10 V ±30V 5590 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227

FETs, MOSFETs Electronic Components

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