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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT20M20LFLLG Microchip Technology electronic component

APT20M20LFLLG

MOSFET N-CH 200V 100A TO264

Microchip Technology

7,054
RFQ

Datasheet

POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 20mOhm @ 50A, 10V 5V @ 2.5mA 110 nC @ 10 V - 6850 pF @ 25 V - - - - - Through Hole TO-264 [L]
IXFE39N90 IXYS electronic component

IXFE39N90

MOSFET N-CH 900V 34A SOT227B

IXYS

4,160
RFQ

-

HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 34A (Tc) 10V 220mOhm @ 19.5A, 10V 5V @ 8mA 375 nC @ 10 V ±20V 13400 pF @ 25 V - 580W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT58M50JCU2 Microchip Technology electronic component

APT58M50JCU2

MOSFET N-CH 500V 58A SOT227

Microchip Technology

5,636
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 10800 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227
GA20SICP12-247 GeneSiC Semiconductor electronic component

GA20SICP12-247

TRANS SJT 1200V 45A TO247AB

GeneSiC Semiconductor

5,702
RFQ

Datasheet

- TO-247-3 Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 45A (Tc) - 50mOhm @ 20A - - - 3091 pF @ 800 V - 282W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
IXTK20N150 Littelfuse Inc. electronic component

IXTK20N150

MOSFET N-CH 1500V 20A TO264

Littelfuse Inc.

9,601
RFQ

Datasheet

- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1500 V 20A (Tc) 10V 1Ohm @ 10A, 10V 4.5V @ 1mA 215 nC @ 10 V ±30V 7800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (IXTK)
APT1201R5BVRG Microchip Technology electronic component

APT1201R5BVRG

MOSFET N-CH 1200V 10A TO247

Microchip Technology

4,901
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 10A (Tc) 10V 1.5Ohm @ 5A, 10V 4V @ 1mA 28 nC @ 10 V - 4440 pF @ 25 V - - - - - Through Hole TO-247-3
APT30M40JVR Microchip Technology electronic component

APT30M40JVR

MOSFET N-CH 300V 70A ISOTOP

Microchip Technology

9,701
RFQ

Datasheet

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 300 V 70A (Tc) 10V 40mOhm @ 500mA, 10V 4V @ 2.5mA 425 nC @ 10 V ±30V 10200 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT5010JVRU3 Microchip Technology electronic component

APT5010JVRU3

MOSFET N-CH 500V 44A SOT227

Microchip Technology

7,804
RFQ

Datasheet

- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 100mOhm @ 22A, 10V 4V @ 2.5mA 312 nC @ 10 V ±30V 7410 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT29F80J Microchip Technology electronic component

APT29F80J

MOSFET N-CH 800V 31A ISOTOP

Microchip Technology

7,916
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 31A (Tc) 10V 210mOhm @ 24A, 10V 5V @ 2.5mA 303 nC @ 10 V ±30V 9326 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
MKE38P600LB-TUB IXYS electronic component

MKE38P600LB-TUB

MOSFET N-CH 600V 50A SMPD

IXYS

6,170
RFQ

Datasheet

- 9-SMD Module Tube Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) - - - - - - - - - - - Surface Mount ISOPLUS-SMPD™.B
APT22F100J Microchip Technology electronic component

APT22F100J

MOSFET N-CH 1000V 23A ISOTOP

Microchip Technology

5,101
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 380mOhm @ 18A, 10V - 305 nC @ 10 V ±30V 9835 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT5010JLL Microchip Technology electronic component

APT5010JLL

MOSFET N-CH 500V 41A ISOTOP

Microchip Technology

4,998
RFQ

Datasheet

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) - 100mOhm @ 20.5A, 10V 5V @ 2.5mA 95 nC @ 10 V - 4360 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT12057B2LLG Microchip Technology electronic component

APT12057B2LLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology

7,687
RFQ

Datasheet

POWER MOS 7® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 6200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT50M50L2LLG Microchip Technology electronic component

APT50M50L2LLG

MOSFET N-CH 500V 89A 264 MAX

Microchip Technology

5,440
RFQ

Datasheet

POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 89A (Tc) - 50mOhm @ 44.5A, 10V 5V @ 5mA 200 nC @ 10 V - 10550 pF @ 25 V - - - - - Through Hole 264 MAX™ [L2]
IXFN36N110P IXYS electronic component

IXFN36N110P

MOSFET N-CH 1100V 36A SOT-227B

IXYS

2,141
RFQ

-

HiPerFET™, Polar SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 1100 V 36A (Tc) 10V 240mOhm @ 500mA, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 23000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
STE70NM60 STMicroelectronics electronic component

STE70NM60

MOSFET N-CH 600V 70A ISOTOP

STMicroelectronics

8,387
RFQ

Datasheet

MDmesh™ ISOTOP Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 55mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7300 pF @ 25 V - 600W (Tc) 150°C (TJ) - - Chassis Mount ISOTOP®
IXFN44N80 IXYS electronic component

IXFN44N80

MOSFET N-CH 800V 44A SOT-227B

IXYS

9,510
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 165mOhm @ 500mA, 10V 4.5V @ 8mA 380 nC @ 10 V ±20V 10000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT26M100JCU2 Microchip Technology electronic component

APT26M100JCU2

MOSFET N-CH 1000V 26A SOT227

Microchip Technology

4,389
RFQ

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT6013JLL Microchip Technology electronic component

APT6013JLL

MOSFET N-CH 600V 39A ISOTOP

Microchip Technology

7,416
RFQ

Datasheet

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 130mOhm @ 19.5A, 10V 5V @ 2.5mA 130 nC @ 10 V ±30V 5630 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
IXFN39N90 IXYS electronic component

IXFN39N90

MOSFET N-CH 900V 39A SOT-227B

IXYS

5,916
RFQ

Datasheet

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 39A (Tc) 10V 220mOhm @ 500mA, 10V 5V @ 8mA 390 nC @ 10 V ±20V 9200 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B

FETs, MOSFETs Electronic Components

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