Hello! Welcome to Raywise Technologies Co.,Limited!

FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT24M80S Microchip Technology electronic component

APT24M80S

MOSFET N-CH 800V 25A D3PAK

Microchip Technology

4,827
RFQ

Datasheet

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 390mOhm @ 12A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4595 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
GS-065-030-6-LT-MR Infineon Technologies Canada Inc. electronic component

GS-065-030-6-LT-MR

GS-065-030-6-LT-MR

Infineon Technologies Canada Inc.

5,384
RFQ

-

- - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
IGT60R042D1ATMA1 Infineon Technologies electronic component

IGT60R042D1ATMA1

GAN HV

Infineon Technologies

2,436
RFQ

-

CoolGaN™ 8-PowerSFN Tape & Reel (TR) Last Time Buy - GaNFET (Gallium Nitride) 600 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
APT1204R7SFLLG Microchip Technology electronic component

APT1204R7SFLLG

MOSFET N-CH 1200V 3.5A D3PAK

Microchip Technology

2,029
RFQ

Datasheet

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 3.5A (Tc) - 4.7Ohm @ 1.75A, 10V 5V @ 1mA 31 nC @ 10 V - 715 pF @ 25 V - - - - - Surface Mount D3PAK
IXTK110N30 IXYS electronic component

IXTK110N30

MOSFET N-CH 300V 110A TO264

IXYS

8,839
RFQ

-

MegaMOS™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 110A (Tc) 10V 26mOhm @ 500mA, 10V 4V @ 250µA 390 nC @ 10 V ±20V 7800 pF @ 25 V - 730W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (IXTK)
APT20M45SVRG Microchip Technology electronic component

APT20M45SVRG

MOSFET N-CH 200V 56A D3PAK

Microchip Technology

4,106
RFQ

Datasheet

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) - 45mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V - 4860 pF @ 25 V - - - - - Surface Mount D3PAK
APT20M38SVRG/TR Microchip Technology electronic component

APT20M38SVRG/TR

MOSFET N-CH 200V 67A D3PAK

Microchip Technology

8,015
RFQ

Datasheet

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 67A (Tc) 10V 38mOhm @ 33.5A, 10V 4V @ 1mA 225 nC @ 10 V ±30V 6120 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
IXFR102N30P Littelfuse Inc. electronic component

IXFR102N30P

MOSFET N-CH 300V 60A ISOPLUS247

Littelfuse Inc.

9,756
RFQ

Datasheet

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 36mOhm @ 51A, 10V 5V @ 4mA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFR180N06 IXYS electronic component

IXFR180N06

MOSFET N-CH 60V 180A ISOPLUS247

IXYS

6,737
RFQ

Datasheet

HiPerFET™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 5mOhm @ 90A, 10V 4V @ 8mA 420 nC @ 10 V ±20V 7650 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFK20N120 IXYS electronic component

IXFK20N120

MOSFET N-CH 1200V 20A TO264AA

IXYS

2,416
RFQ

-

HiPerFET™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 750mOhm @ 500mA, 10V 4.5V @ 8mA 160 nC @ 10 V ±30V 7400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
IGOT60R042D1AUMA2 Infineon Technologies electronic component

IGOT60R042D1AUMA2

GANFET N-CH

Infineon Technologies

5,871
RFQ

-

- 20-PowerSOIC (0.433", 11.00mm Width) Tape & Reel (TR) Last Time Buy N-Channel GaNFET (Gallium Nitride) 600 V - - - - - - - - - - - - Surface Mount PG-DSO-20-87
IGO60R042D1AUMA2 Infineon Technologies electronic component

IGO60R042D1AUMA2

GAN HV

Infineon Technologies

4,107
RFQ

-

CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Tape & Reel (TR) Last Time Buy - GaNFET (Gallium Nitride) 600 V - - - - - - - - - - - - Surface Mount PG-DSO-20-85
IRFP26N60L Vishay Siliconix electronic component

IRFP26N60L

MOSFET N-CH 600V 26A TO247-3

Vishay Siliconix

8,924
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 5020 pF @ 25 V - 470W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IXFK90N30 IXYS electronic component

IXFK90N30

MOSFET N-CH 300V 90A TO-264

IXYS

6,297
RFQ

Datasheet

HiPerFET™ TO-264-3, TO-264AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 300 V 90A (Tc) 10V 33mOhm @ 45A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 10000 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
GAN039-650NTBZ Nexperia USA Inc. electronic component

GAN039-650NTBZ

650 V, 33 MOHM GALLIUM NITRIDE (

Nexperia USA Inc.

2,713
RFQ

-

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 650 V 58.5A (Tc) 10V 39mOhm @ 32A, 10V 4.6V @ 1mA 26 nC @ 10 V ±20V 1980 pF @ 400 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount CCPAK1212i
IXFK32N60 IXYS electronic component

IXFK32N60

MOSFET N-CH 600V 32A TO264AA

IXYS

8,677
RFQ

Datasheet

HiPerFET™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 250mOhm @ 500mA, 10V 4.5V @ 8mA 325 nC @ 10 V ±20V 9000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
IRFP32N50K Vishay Siliconix electronic component

IRFP32N50K

MOSFET N-CH 500V 32A TO247-3

Vishay Siliconix

9,245
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 160mOhm @ 32A, 10V 5V @ 250µA 190 nC @ 10 V ±30V 5280 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IXFR12N100 IXYS electronic component

IXFR12N100

MOSFET N-CH 1000V 10A ISOPLUS247

IXYS

2,195
RFQ

-

HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) - 1.1Ohm @ 6A, 10V 5.5V @ 4mA 90 nC @ 10 V - 2900 pF @ 25 V - - - - - Through Hole ISOPLUS247™
IXFT15N100Q IXYS electronic component

IXFT15N100Q

MOSFET N-CH 1000V 15A TO268

IXYS

5,239
RFQ

Datasheet

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 700mOhm @ 500mA, 10V 5V @ 4mA 170 nC @ 5 V ±20V 4500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
APT1003RSFLLG Microchip Technology electronic component

APT1003RSFLLG

MOSFET N-CH 1000V 4A D3PAK

Microchip Technology

9,612
RFQ

-

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) - 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V - 694 pF @ 25 V - - - - - Surface Mount D3PAK

FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
This category includes related FETs, MOSFETs subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for FETs, MOSFETs components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.