FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXTH06N220P3HV MOSFET N-CH 2200V 600MA TO247HV IXYS	3,879	RFQ	Datasheet	Polar P3™	TO-247-3 Variant	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2200 V	600mA (Tc)	10V	80Ohm @ 300mA, 10V	4V @ 250µA	10.4 nC @ 10 V	±20V	290 pF @ 25 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV
IPW65R041CFDFKSA1 MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies	9,056	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	68.5A (Tc)	10V	41mOhm @ 33.1A, 10V	4.5V @ 3.3mA	300 nC @ 10 V	±20V	8400 pF @ 100 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1
IXFK120N25 MOSFET N-CH 250V 120A TO264AA IXYS	7,643	RFQ	-	HiPerFET™	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	22mOhm @ 500mA, 10V	4V @ 8mA	400 nC @ 10 V	±20V	9400 pF @ 25 V	-	560W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)
IXFK150N15 MOSFET N-CH 150V 150A TO264AA IXYS	9,048	RFQ	Datasheet	HiPerFET™	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	150A (Tc)	10V	12.5mOhm @ 75A, 10V	4V @ 8mA	360 nC @ 10 V	±20V	9100 pF @ 25 V	-	560W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)
G3R75MT12J SIC MOSFET N-CH 42A TO263-7 GeneSiC Semiconductor	2	RFQ	Datasheet	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1200 V	42A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	224W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
APT17F100S MOSFET N-CH 1000V 17A D3PAK Microchip Technology	4,310	RFQ	Datasheet	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	17A (Tc)	10V	780mOhm @ 9A, 10V	5V @ 1mA	150 nC @ 10 V	±30V	4845 pF @ 25 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
IXFT13N100 MOSFET N-CH 1000V 12.5A TO268 IXYS	8,408	RFQ	Datasheet	HiPerFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1000 V	12.5A (Tc)	10V	900mOhm @ 500mA, 10V	4.5V @ 4mA	155 nC @ 10 V	±20V	4000 pF @ 25 V	-	300W (Tc)	-	-	-	Surface Mount	TO-268AA
APT43F60B2 MOSFET N-CH 600V 45A T-MAX Microchip Technology	3,111	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	600 V	45A (Tc)	10V	150mOhm @ 21A, 10V	5V @ 2.5mA	215 nC @ 10 V	±30V	8590 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
IXTK160N20 MOSFET N-CH 200V 160A TO264 IXYS	4,331	RFQ	-	MegaMOS™	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	160A (Tc)	10V	13mOhm @ 500mA, 10V	4V @ 250µA	415 nC @ 10 V	±20V	12900 pF @ 25 V	-	730W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)
IXFT15N100Q3-TRL MOSFET N-CH 1000V 15A TO268 Littelfuse Inc.	2,321	RFQ	-	HiPerFET™, Q3 Class	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	15A (Tc)	10V	1.05Ohm @ 7.5A, 10V	6.5V @ 4mA	64 nC @ 10 V	±30V	3250 pF @ 25 V	-	690W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268
APT5016BLLG MOSFET N-CH 500V 30A TO247 Microchip Technology	4,615	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	160mOhm @ 15A, 10V	5V @ 1mA	72 nC @ 10 V	±30V	2833 pF @ 25 V	-	329W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXTK33N50 MOSFET N-CH 500V 33A TO264 IXYS	6,110	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	33A (Tc)	10V	170mOhm @ 500mA, 10V	4V @ 250µA	250 nC @ 10 V	±20V	4900 pF @ 25 V	-	416W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)
APT42F50S MOSFET N-CH 500V 42A D3PAK Microchip Technology	6,706	RFQ	Datasheet	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	42A (Tc)	10V	130mOhm @ 21A, 10V	5V @ 1mA	170 nC @ 10 V	±30V	6810 pF @ 25 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
IRFL4310TR MOSFET N-CH 100V 1.6A SOT223 Infineon Technologies	5,199	RFQ	Datasheet	-	TO-261-4, TO-261AA	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	1.6A (Ta)	-	200mOhm @ 1.6A, 10V	4V @ 250µA	25 nC @ 10 V	-	330 pF @ 25 V	-	-	-	-	-	Surface Mount	SOT-223
GA10JT12-263 TRANS SJT 1200V 25A GeneSiC Semiconductor	3,878	RFQ	Datasheet	-	-	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1200 V	25A (Tc)	-	120mOhm @ 10A	-	-	-	1403 pF @ 800 V	-	170W (Tc)	175°C (TJ)	-	-	Surface Mount	-
GA10JT12-247 TRANS SJT 1200V 10A TO247AB GeneSiC Semiconductor	9,793	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1200 V	10A (Tc)	-	140mOhm @ 10A	-	-	-	-	-	170W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247AB
IXFH67N10 MOSFET N-CH 100V 67A TO-247AD IXYS	3,334	RFQ	Datasheet	HiPerFET™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	67A (Tc)	10V	25mOhm @ 33.5A, 10V	4V @ 4mA	260 nC @ 10 V	±20V	4500 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXFX25N90 MOSFET N-CH 900V 25A PLUS247-3 IXYS	9,292	RFQ	Datasheet	HiPerFET™	TO-247-3 Variant	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	25A (Tc)	10V	330mOhm @ 500mA, 10V	5V @ 8mA	240 nC @ 10 V	±20V	10800 pF @ 25 V	-	560W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
APT5018SLLG MOSFET N-CH 500V 27A D3PAK Microchip Technology	2,456	RFQ	Datasheet	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	27A (Tc)	-	180mOhm @ 13.5A, 10V	5V @ 1mA	58 nC @ 10 V	-	2596 pF @ 25 V	-	-	-	-	-	Surface Mount	D3PAK
APT56M50B2 MOSFET N-CH 500V 56A T-MAX Microchip Technology	6,407	RFQ	Datasheet	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	56A (Tc)	10V	100mOhm @ 28A, 10V	5V @ 2.5mA	220 nC @ 10 V	±30V	8800 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™

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FETs, MOSFETs Electronic Components

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