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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IXFR80N60P3 Littelfuse Inc. electronic component

IXFR80N60P3

MOSFET N-CH 600V 48A ISOPLUS247

Littelfuse Inc.

4,550
RFQ

Datasheet

HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 76mOhm @ 40A, 10V 5V @ 8mA 190 nC @ 10 V ±30V 13100 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
APT5015BVRG Microchip Technology electronic component

APT5015BVRG

MOSFET N-CH 500V 32A TO247

Microchip Technology

9,624
RFQ

Datasheet

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
APT43F60L Microchip Technology electronic component

APT43F60L

MOSFET N-CH 600V 45A TO264

Microchip Technology

8,470
RFQ

Datasheet

POWER MOS 8™ TO-264-3, TO-264AA Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 45A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 8590 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
IXFX24N100 IXYS electronic component

IXFX24N100

MOSFET N-CH 1000V 24A PLUS 247

IXYS

3,481
RFQ

Datasheet

HiPerFET™ TO-247-3 Variant Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 267 nC @ 10 V ±20V 8700 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
MKH24I650HR IXYS electronic component

MKH24I650HR

DISCMSFT NCHSUPRJUNCCFD-CLS ISO2

IXYS

5,994
RFQ

Datasheet

- - Tube Obsolete - - - - - - - - - - - - - - - - -
APT31M100B2 Microchip Technology electronic component

APT31M100B2

MOSFET N-CH 1000V 32A T-MAX

Microchip Technology

9,528
RFQ

Datasheet

POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 380mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT8065BVRG Microchip Technology electronic component

APT8065BVRG

MOSFET N-CH 800V 13A TO247

Microchip Technology

3,660
RFQ

Datasheet

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) - 650mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3700 pF @ 25 V - - - - - Through Hole TO-247 [B]
APT1003RSFLLG/TR Microchip Technology electronic component

APT1003RSFLLG/TR

MOSFET N-CH 1KV 4A D3PAK

Microchip Technology

3,714
RFQ

Datasheet

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 694 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT5017BVFRG Microchip Technology electronic component

APT5017BVFRG

MOSFET N-CH 500V 30A TO247

Microchip Technology

5,592
RFQ

Datasheet

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) - 170mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
IXFH240N15X3 Littelfuse Inc. electronic component

IXFH240N15X3

MOSFET N-CH 150V 240A TO247

Littelfuse Inc.

6,820
RFQ

Datasheet

HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 5.4mOhm @ 120A, 10V 4.5V @ 4mA 150 nC @ 10 V ±20V 9580 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
APT56F50L Microchip Technology electronic component

APT56F50L

MOSFET N-CH 500V 56A TO264

Microchip Technology

7,324
RFQ

Datasheet

POWER MOS 8™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
UF4SC120023B7S Qorvo electronic component

UF4SC120023B7S

1200V/23MO,SICFET,G4,TO263-7

Qorvo

6,159
RFQ

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Bulk Active N-Channel, Depletion Mode SiCFET (Silicon Carbide) 1200 V 72A (Tc) 12V 30mOhm @ 40A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1430 pF @ 800 V - 385W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7L
IXFK26N90 IXYS electronic component

IXFK26N90

MOSFET N-CH 900V 26A TO-264

IXYS

6,822
RFQ

Datasheet

HiPerFET™ TO-264-3, TO-264AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 26A (Tc) 10V 300mOhm @ 13A, 10V 5V @ 8mA 240 nC @ 10 V ±20V 10800 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
IXFK110N65X3 Littelfuse Inc. electronic component

IXFK110N65X3

DISCRETE MOSFET 110A 650V X3 TO2

Littelfuse Inc.

5,635
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
IXFX110N65X3 Littelfuse Inc. electronic component

IXFX110N65X3

DISCRETE MOSFET 110A 650V X3 PLU

Littelfuse Inc.

5,710
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
GS66508T-MR Infineon Technologies Canada Inc. electronic component

GS66508T-MR

GS66508T-MR

Infineon Technologies Canada Inc.

9,644
RFQ

-

- Die Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 6V 63mOhm @ 9A, 6V 2.6V @ 7mA 5.8 nC @ 6 V +7V, -10V 260 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount Die
GS66508B-TR Infineon Technologies Canada Inc. electronic component

GS66508B-TR

GS66508B-TR

Infineon Technologies Canada Inc.

5,090
RFQ

-

- Die Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 6V 63mOhm @ 9A, 6V 2.6V @ 7mA 6.1 nC @ 6 V +7V, -10V 242 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount Die
GS66508T-TR Infineon Technologies Canada Inc. electronic component

GS66508T-TR

GS66508T-TR

Infineon Technologies Canada Inc.

2,521
RFQ

-

- Die Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 6V 63mOhm @ 9A, 6V 2.6V @ 7mA 5.8 nC @ 6 V +7V, -10V 260 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount Die
APT20M22B2VRG Microsemi Corporation electronic component

APT20M22B2VRG

MOSFET N-CH 200V 100A T-MAX

Microsemi Corporation

3,333
RFQ

Datasheet

POWER MOS V® TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
IXFR24N100 IXYS electronic component

IXFR24N100

MOSFET N-CH 1KV 22A ISOPLUS247

IXYS

7,102
RFQ

Datasheet

HiPerFET™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 22A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 267 nC @ 10 V ±20V 8700 pF @ 25 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™

FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
This category includes related FETs, MOSFETs subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for FETs, MOSFETs components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.