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FET, MOSFET Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM6968SDCA RVG Taiwan Semiconductor Corporation electronic component

TSM6968SDCA RVG

MOSFET 2N-CH 20V 6.5A 8TSSOP

Taiwan Semiconductor Corporation

86
RFQ

-

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 6.5A (Ta) 22mOhm @ 6.5A, 4.5V 1V @ 250µA 15nC @ 4.5V 950pF @ 10V 1.04W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
TT8J3TR Rohm Semiconductor electronic component

TT8J3TR

MOSFET 2P-CH 30V 2.5A 8TSST

Rohm Semiconductor

29
RFQ

Datasheet

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy - 2 P-Channel (Dual) - 30V 2.5A 84mOhm @ 2.5A, 10V 2.5V @ 1mA 4.8nC @ 5V 460pF @ 15V 1.25W 150°C (TJ) - - Surface Mount 8-TSST
FC8J33040L Panasonic Electronic Components electronic component

FC8J33040L

MOSFET 2N-CH 33V 5A WMINI8-F1

Panasonic Electronic Components

100
RFQ

Datasheet

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 33V 5A 38mOhm @ 2.5A, 10V 2.5V @ 260µA 2.8nC @ 4.5V 220pF @ 10V 1W 150°C (TJ) - - Surface Mount WMini8-F1
ZXMN3AMCTA Diodes Incorporated electronic component

ZXMN3AMCTA

MOSFET 2N-CH 30V 3.7A 8DFN

Diodes Incorporated

41
RFQ

Datasheet

- 8-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 3.7A (Ta) 120mOhm @ 2.5A, 10V 3V @ 250µA 2.3nC @ 4.5V 190pF @ 25V 1.7W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN3020B-8
SP8K2TB Rohm Semiconductor electronic component

SP8K2TB

MOSFET 2N-CH 30V 6A 8SOP

Rohm Semiconductor

40
RFQ

Datasheet

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A 30mOhm @ 6A, 10V 2.5V @ 1mA 10.1nC @ 5V 520pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
SMA5131 Sanken Electric USA Inc. electronic component

SMA5131

MOSFET 6N-CH 250V 2A 12SIP

Sanken Electric USA Inc.

81
RFQ

Datasheet

- 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 250V 2A - - - - - - - - Through Hole 12-SIP
SMA5133 Sanken Electric USA Inc. electronic component

SMA5133

MOSFET 3N/3P-CH 500V 2.5A 12SIP

Sanken Electric USA Inc.

84
RFQ

Datasheet

- 12-SIP Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) - 500V 2.5A - - - - - - - - Through Hole 12-SIP
SMA5132 Sanken Electric USA Inc. electronic component

SMA5132

MOSFET 3N/3P-CH 500V 1.5A 12SIP

Sanken Electric USA Inc.

95
RFQ

Datasheet

- 12-SIP Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) - 500V 1.5A - - - - - - - - Through Hole 12-SIP
SLA5065 LF830 Sanken Electric USA Inc. electronic component

SLA5065 LF830

MOSFET 4N-CH 60V 7A 15SIP

Sanken Electric USA Inc.

60
RFQ

Datasheet

- 15-SIP Tube Active MOSFET (Metal Oxide) 4 N-Channel - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 4.8W 150°C (TJ) - - Through Hole 15-SIP
SLA5201 Sanken Electric USA Inc. electronic component

SLA5201

MOSFET 3N/3P-CH 600V 7A 15ZIP

Sanken Electric USA Inc.

98
RFQ

Datasheet

- 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) - 600V 7A - - - - - - - - Through Hole 15-ZIP
SPF0004 Sanken Electric USA Inc. electronic component

SPF0004

MOSFET 2N-CH 275V 6A 20HSOP

Sanken Electric USA Inc.

45
RFQ

Datasheet

- 20-PowerSOIC (0.295", 7.50mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 275V 6A (Ta) 260mOhm @ 6A, 10V 2.6V @ 1mA - 960pF @ 10V 2.5W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount 20-HSOP
DF23MR12W1M1B11BPSA1 Infineon Technologies electronic component

DF23MR12W1M1B11BPSA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

12
RFQ

Datasheet

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
F423MR12W1M1PB11BPSA1 Infineon Technologies electronic component

F423MR12W1M1PB11BPSA1

MOSFET 4N-CH 1200V 50A AG-EASY1B

Infineon Technologies

3
RFQ

Datasheet

EasyPACK™ Module Tray Obsolete MOSFET (Metal Oxide) 4 N-Channel - 1200V (1.2kV) 50A 22.5mOhm @ 50A, 15V 5.5V @ 20mA 124nC @ 15V 3.68nF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
MSCM20XM16F4G Microchip Technology electronic component

MSCM20XM16F4G

MOSFET 200V 77A SP4

Microchip Technology

6
RFQ

Datasheet

- Module Tube Active - - - 200V 77A (Tc) - - - - - - - - Chassis Mount SP4
MSCSM120TLM31C3AG Microchip Technology electronic component

MSCSM120TLM31C3AG

MOSFET 4N-CH 1200V 89A SP3F

Microchip Technology

4
RFQ

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
F411MR12W2M1B76BOMA1 Infineon Technologies electronic component

F411MR12W2M1B76BOMA1

MOSFET 4N-CH 1200V AG-EASY1B

Infineon Technologies

8,563
RFQ

-

EasyPACK™ CoolSiC™ Module Bulk Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
APTMC120AM25CT3AG Microchip Technology electronic component

APTMC120AM25CT3AG

MOSFET 2N-CH 1200V 113A SP3

Microchip Technology

7
RFQ

Datasheet

- SP3 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 113A (Tc) 25mOhm @ 80A, 20V 2.2V @ 4mA (Typ) 197nC @ 20V 3800pF @ 1000V 500W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM120TLM16C3AG Microchip Technology electronic component

MSCSM120TLM16C3AG

MOSFET 4N-CH 1200V 173A SP3F

Microchip Technology

2
RFQ

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM120DDUM16CTBL3NG Microchip Technology electronic component

MSCSM120DDUM16CTBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

6
RFQ

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
FF2MR12KM1HOSA1 Infineon Technologies electronic component

FF2MR12KM1HOSA1

MOSFET 2N-CH 1200V 500A AG-62MM

Infineon Technologies

13
RFQ

Datasheet

CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
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FET, MOSFET Arrays Electronic Components

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