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FET, MOSFET Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MSCSM170HRM233AG Microchip Technology electronic component

MSCSM170HRM233AG

MOSFET 4N-CH 1700V/1200V 124A

Microchip Technology

10
RFQ

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 124A (Tc), 89A (Tc) 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V 3.2V @ 5mA, 2.8V @ 3mA 356nC @ 20V, 232nC @ 20V 6600pF @ 1000V, 3020pF @ 1000V 602W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF6MR20W2M1HB70BPSA1 Infineon Technologies electronic component

FF6MR20W2M1HB70BPSA1

FF6MR20W2M1HB70BPSA1

Infineon Technologies

15
RFQ

Datasheet

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2000V (2kV) 160A (Tj) 8.1mOhm @ 160A, 18V 5.15V @ 112mA 780nC @ 3V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
F3L6MR20W2M1HB70BPSA1 Infineon Technologies electronic component

F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

Infineon Technologies

15
RFQ

Datasheet

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 4 N-Channel Silicon Carbide (SiC) 2000V (2kV) 155A (Tj) 8.7mOhm @ 100A, 18V 5.15V @ 112mA 297nC @ 18V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM163AG Microchip Technology electronic component

MSCSM120HRM163AG

MOSFET 4N-CH 1200V/700V 173A

Microchip Technology

10
RFQ

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 173A (Tc), 124A (Tc) 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V 2.8V @ 6mA, 2.4V @ 4mA 464nC, 215nC @ 20V 6040pF @ 1000V, 4500pF @ 700V 745W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB6R0A23GM4 Wolfspeed, Inc. electronic component

CAB6R0A23GM4

MOSFET 2N-CH 2300V 150A

Wolfspeed, Inc.

6
RFQ

Datasheet

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 8.4mOhm @ 200A, 15V 4V @ 95mA 735nC @ 15V 30500pF @ 1.5kV 610W -40°C ~ 150°C (TJ) - - Chassis Mount -
FF3MR12KM1HHPSA1 Infineon Technologies electronic component

FF3MR12KM1HHPSA1

MOSFET 2N-CH 1200V 190A AG62MMHB

Infineon Technologies

19
RFQ

Datasheet

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 190A (Tc) 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
FF3MR12KM1HPHPSA1 Infineon Technologies electronic component

FF3MR12KM1HPHPSA1

MOSFET 2N-CH 1200V 220A AG62MMHB

Infineon Technologies

13
RFQ

Datasheet

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 220A 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
APTM100A13SCG Microchip Technology electronic component

APTM100A13SCG

MOSFET 2N-CH 1000V 65A SP6

Microchip Technology

4
RFQ

-

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
FF5MR20KM1HHPSA1 Infineon Technologies electronic component

FF5MR20KM1HHPSA1

MOSFET

Infineon Technologies

9
RFQ

Datasheet

- - Tray Active - - - - - - - - - - - - - - -
FF4MR20KM1HPHPSA1 Infineon Technologies electronic component

FF4MR20KM1HPHPSA1

MOSFET 2N-CH 2000V AG-62MMHB

Infineon Technologies

10
RFQ

Datasheet

C, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C - - Chassis Mount AG-62MMHB
BSM450D12P4G102 Rohm Semiconductor electronic component

BSM450D12P4G102

MOSFET 2N-CH 1200V 447A MODULE

Rohm Semiconductor

4
RFQ

Datasheet

- Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 447A (Tc) - 4.8V @ 218.4mA - 44000pF @ 10V 1.45kW (Tc) 175°C (TJ) - - Chassis Mount Module
HAS175M12BM3 Wolfspeed, Inc. electronic component

HAS175M12BM3

MOSFET 2N-CH 1200V 175A

Wolfspeed, Inc.

3
RFQ

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 175A - - - - - - - - Chassis Mount -
FF1MR12KM1HHPSA1 Infineon Technologies electronic component

FF1MR12KM1HHPSA1

MOSFET

Infineon Technologies

12
RFQ

Datasheet

- - Tray Active - - - - - - - - - - - - - - -
FF1MR12KM1HPHPSA1 Infineon Technologies electronic component

FF1MR12KM1HPHPSA1

MOSFET

Infineon Technologies

16
RFQ

Datasheet

- - Tray Active - - - - - - - - - - - - - - -
MSCSM170HRM11NG Microchip Technology electronic component

MSCSM170HRM11NG

MOSFET 4N-CH 1700V/1200V 226A

Microchip Technology

4
RFQ

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 226A (Tc), 163A (Tc) 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V 3.2V @ 10mA, 2.8V @ 6mA 712nC @ 20V, 464nC @ 20V 13200pF @ 1000V, 6040pF @ 1000V 1.012kW (Tc), 662W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6AG Microchip Technology electronic component

MSCSM120AM042T6AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

4
RFQ

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM08NG Microchip Technology electronic component

MSCSM120HRM08NG

MOSFET 4N-CH 1200V/700V 317A

Microchip Technology

8
RFQ

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V 2.8V @ 12mA, 2.4V @ 8mA 928nC @ 20V, 430nC @ 20V 12100pF @ 1000V, 9000pF @ 700V 1.253kW (Tc), 613W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NVVR26A120M1WST onsemi electronic component

NVVR26A120M1WST

MOSFET 2N-CH 1200V AHPM15-CDA

onsemi

6
RFQ

Datasheet

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDA
ADP46075W3 STMicroelectronics electronic component

ADP46075W3

MOSFET 6N-CH 750V 485A ACEPACK

STMicroelectronics

5
RFQ

Datasheet

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 750V 485A (Tj) 2.05mOhm @ 460A, 18V 4.4V @ 40mA 984nC @ 18V 27050pF @ 400V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
MSCSM170HRM075NG Microchip Technology electronic component

MSCSM170HRM075NG

MOSFET 4N-CH 1700V/1200V 337A

Microchip Technology

7
RFQ

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V 3.2V @ 15mA, 2.8V @ 12mA 1068nC @ 20V, 928nC @ 20V 19800pF @ 1000V, 12100pF @ 1000V 1.492kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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FET, MOSFET Arrays Electronic Components

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