Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
MBR7545R DIODE SCHOTTKY REV 45V 75A DO5 GeneSiC Semiconductor	7,926	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	45 V	75A	650 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	-	-	Chassis, Stud Mount	DO-5	-55°C ~ 150°C
MBR7560R DIODE SCHOTTKY REV 60V 75A DO5 GeneSiC Semiconductor	2,088	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	60 V	75A	750 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-	-	-	Chassis, Stud Mount	DO-5	-55°C ~ 150°C
MBR7580R DIODE SCHOTTKY REV 80V 75A DO5 GeneSiC Semiconductor	8,662	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	80 V	75A	840 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 80 V	-	-	-	Chassis, Stud Mount	DO-5	-55°C ~ 150°C
UES1106E3 RECTIFIER Microchip Technology	3,048	RFQ	-	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-86HF80M DIODE GP REV 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	3,256	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-86HFR80M DIODE GP REV 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	5,134	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
UES1102 DIODE GEN PURP 100V 2A A AXIAL Microchip Technology	5,904	RFQ	-	-	A, Axial	Bulk	Active	Standard	100 V	2A	975 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	-	-	-	Through Hole	A, Axial	-55°C ~ 175°C
VS-T40HFL60S02 DIODE GEN PURP 600V 40A D-55 Vishay General Semiconductor - Diodes Division	4,120	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	600 V	40A	-	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 600 V	-	-	-	Chassis Mount	D-55	-
1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology	8,886	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	50 V	1.3A	1.76 V @ 18.8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	-	-	-	Through Hole	A, Axial	-65°C ~ 155°C
1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology	6,073	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	100 V	1.3A	1.76 V @ 18.8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	-	-	-	Through Hole	A, Axial	-65°C ~ 155°C
1N4500 DIODE GEN PURP DO35 Microchip Technology	9,707	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	-	-	1.1 V @ 300 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	-	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
GATELEAD28133HPSA1 ACCY GATE LEAD FOR MODULE Infineon Technologies	4,316	RFQ	-	*	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
UES1106/TR DIODE GEN PURP 400V 1A Microchip Technology	6,461	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	-	-	-	Through Hole	A, Axial	-55°C ~ 150°C
VS-T40HF120 DIODE GEN PURP 1.2KV 40A D-55 Vishay General Semiconductor - Diodes Division	9,357	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	1200 V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 1200 V	-	-	-	Chassis Mount	D-55	-
PCFFS50120AF DIODE SIL CARB 1.2KV WAFER DIE onsemi	9,404	RFQ	Datasheet	-	Die	Tray	Active	SiC (Silicon Carbide) Schottky	1200 V	50A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	-	-	-	Surface Mount	Die	175°C (Max)
UES1106E3/TR RECTIFIER UFR,FRR Microchip Technology	8,948	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N6626 DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology	6,529	RFQ	Datasheet	-	E, Axial	Bulk	Active	Standard	220 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 220 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Through Hole	-	-65°C ~ 150°C
VS-240NQ045PBF DIODE SCHOTTKY 45V 240A D-67 Vishay General Semiconductor - Diodes Division	3,801	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Active	Schottky	45 V	240A	720 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 45 V	14800pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
MBR80100R DIODE SCHOTTKY REV 100V 80A DO5 GeneSiC Semiconductor	5,418	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	100 V	80A	840 mV @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
MBR8020R DIODE SCHOTTKY REV 20V 80A DO5 GeneSiC Semiconductor	5,688	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	20 V	80A	750 mV @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-55°C ~ 150°C

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Single Diodes Electronic Components

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