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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FR40DR05 GeneSiC Semiconductor electronic component

FR40DR05

DIODE GEN PURP REV 200V 40A DO5

GeneSiC Semiconductor

3,600
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 200 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40GR05 GeneSiC Semiconductor electronic component

FR40GR05

DIODE GEN PURP REV 400V 40A DO5

GeneSiC Semiconductor

3,377
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40JR02 GeneSiC Semiconductor electronic component

FR40JR02

DIODE GEN PURP REV 600V 40A DO5

GeneSiC Semiconductor

4,084
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40JR05 GeneSiC Semiconductor electronic component

FR40JR05

DIODE GEN PURP REV 600V 40A DO5

GeneSiC Semiconductor

8,289
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 40A 1.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
1N6622 Microchip Technology electronic component

1N6622

DIODE GEN PURP 600V 1.2A A-PAK

Microchip Technology

3,196
RFQ

Datasheet

- A, Axial Bulk Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
1N6621 Microchip Technology electronic component

1N6621

DIODE GEN PURP 440V 1.2A AXIAL

Microchip Technology

5,112
RFQ

Datasheet

- A, Axial Bulk Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
1N4949SM/TR Microchip Technology electronic component

1N4949SM/TR

UFR,FRR

Microchip Technology

5,973
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
LSIC2SD120D15 Littelfuse Inc. electronic component

LSIC2SD120D15

DIODE SIL CARB 1.2KV 44A TO263L

Littelfuse Inc.

4,530
RFQ

Datasheet

Gen2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 44A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 920pF @ 1V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
LSIC2SD120A20A Littelfuse Inc. electronic component

LSIC2SD120A20A

DIODE SIC 1.2KV 54.5A TO220L

Littelfuse Inc.

2,730
RFQ

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54.5A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1142pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
1N6622E3 Microchip Technology electronic component

1N6622E3

DIODE A AXIAL

Microchip Technology

6,063
RFQ

-

- A, Axial Bulk Active - - - 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole A, Axial -
1N6622/TR Microchip Technology electronic component

1N6622/TR

DIODE GEN PURP 600V 1.2A A-PAK

Microchip Technology

4,123
RFQ

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
1N6621/TR Microchip Technology electronic component

1N6621/TR

DIODE GEN PURP 440V 1.2A

Microchip Technology

8,428
RFQ

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
SIDC59D170HX1SA2 Infineon Technologies electronic component

SIDC59D170HX1SA2

DIODE GP 1.7KV 100A WAFER

Infineon Technologies

3,772
RFQ

Datasheet

- Die Bulk Discontinued at Digi-Key Standard 1700 V 100A 1.8 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
JANTXV1N5616 Microchip Technology electronic component

JANTXV1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

7,575
RFQ

Datasheet

- A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N6631/TR Microchip Technology electronic component

JAN1N6631/TR

DIODE GEN PURP 1.1KV 1.4A

Microchip Technology

8,559
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 1100 V 1.4A 1.6 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 1100 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6628/TR Microchip Technology electronic component

JAN1N6628/TR

DIODE GEN PURP 660V 1.75A

Microchip Technology

2,073
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6630/TR Microchip Technology electronic component

JAN1N6630/TR

DIODE GEN PURP 900V 1.4A

Microchip Technology

6,688
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N5616/TR Microchip Technology electronic component

JANTXV1N5616/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,219
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N6547 Microchip Technology electronic component

1N6547

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

8,033
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
1N5829 GeneSiC Semiconductor electronic component

1N5829

DIODE SCHOTTKY 20V 25A DO4

GeneSiC Semiconductor

2,508
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Schottky 20 V 25A 580 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Chassis, Stud Mount DO-4 -55°C ~ 150°C

Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.