Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UTR4360 DIODE GEN PURP 600V 4A B AXIAL Microchip Technology	2,325	RFQ	-	-	B, Axial	Bulk	Active	Standard	600 V	4A	1.1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	5 µA @ 600 V	160pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JANTXV1N5623 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	7,336	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1000 V	15pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
JANTXV1N5807US/TR DIODE GEN PURP 50V 3A D-5B Microchip Technology	3,704	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	D-5B	-65°C ~ 175°C
JANTXV1N5623/TR DIODE GEN PURP 1KV 1A Microchip Technology	2,513	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1 V	15pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
VS-85HFLR100S05 DIODE GP REV 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division	7,455	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1000 V	85A	1.75 V @ 266.9 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
VS-71HF160 DIODE GEN PURP 1.6KV 70A DO203AB Vishay General Semiconductor - Diodes Division	3,734	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	70A	1.46 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
VS-40HF10M DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	2,305	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
VS-40HF20M DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division	6,326	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	200 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
VS-40HF40M DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division	6,713	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
JANTX1N5622US/TR DIODE GEN PURP 1KV 1A D-5A Microchip Technology	4,587	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1 V	-	Military	MIL-PRF-19500/427	Surface Mount	D-5A	-65°C ~ 200°C
1N4256SM DIODE GP 2.5KV 250MA S SQ-MELF Microchip Technology	8,796	RFQ	Datasheet	-	SQ-MELF, S	Bulk	Active	Standard	2500 V	250mA	3.5 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 2500 V	-	-	-	Surface Mount	S, SQ-MELF	-65°C ~ 175°C
1N4255SM DIODE GP 2KV 250MA S SQ-MELF Microchip Technology	4,221	RFQ	Datasheet	-	SQ-MELF, S	Bulk	Active	Standard	2000 V	250mA	3.5 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 2000 V	-	-	-	Surface Mount	S, SQ-MELF	-65°C ~ 175°C
JANTX1N5419US DIODE GEN PURP 500V 3A D-5B Microchip Technology	8,719	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Discontinued at Digi-Key	Standard	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 500 V	-	Military	MIL-PRF-19500/411	Surface Mount	D-5B	-65°C ~ 175°C
UT4040 DIODE GEN PURP 400V 4A B Microchip Technology	4,933	RFQ	-	-	Axial	Bulk	Active	Standard	400 V	4A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	-	-	-	Through Hole	B	-195°C ~ 175°C
1N4948US DIODE GEN PURP 1KV 1A D-5C Microchip Technology	4,507	RFQ	-	-	SQ-MELF, C	Bulk	Active	Standard	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	1 µA @ 1000 V	15pF @ 12V, 1MHz	-	-	Surface Mount	D-5C	-55°C ~ 175°C
SD41 DIODE SCHOTTKY 35V 30A DO4 GeneSiC Semiconductor	5,736	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky	35 V	30A	680 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 35 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
SD4145 DIODE SCHOTTKY 45V 30A DO4 GeneSiC Semiconductor	5,159	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky	45 V	30A	680 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 35 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
JANTXV1N5416US DIODE GEN PURP 100V 3A D-5B Microchip Technology	6,588	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	Military	MIL-PRF-19500/411	Surface Mount	D-5B	-65°C ~ 175°C
1N4942US DIODE GEN PURP 200V 1A A SQ-MELF Microchip Technology	7,462	RFQ	-	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	45pF @ 12V, 1MHz	-	-	Surface Mount	A, SQ-MELF	-65°C ~ 175°C
JANTX1N3595US DIODE GEN PURP 200MA B SQ-MELF Microchip Technology	7,547	RFQ	-	-	SQ-MELF, B	Bulk	Active	Standard	-	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Military	MIL-S-19500-241	Surface Mount	B, SQ-MELF	-65°C ~ 150°C

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Single Diodes Electronic Components

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