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Diode Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
MUR30040CT GeneSiC Semiconductor electronic component

MUR30040CT

DIODE MODULE GP 400V 150A 2TOWER

GeneSiC Semiconductor

 8,211
RFQ

Datasheet

 		- Twin Tower Bulk Active 1 Pair Common Cathode Standard 400 V 150A 1.5 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR30040CTR GeneSiC Semiconductor electronic component

MUR30040CTR

DIODE MODULE GP 400V 150A 2TOWER

GeneSiC Semiconductor

 3,133
RFQ

Datasheet

 		- Twin Tower Bulk Active 1 Pair Common Anode Standard 400 V 150A 1.5 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR30060CT GeneSiC Semiconductor electronic component

MUR30060CT

DIODE MODULE GP 600V 150A 2TOWER

GeneSiC Semiconductor

 5,030
RFQ

Datasheet

 		- Twin Tower Bulk Active 1 Pair Common Cathode Standard 600 V 150A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR30060CTR GeneSiC Semiconductor electronic component

MUR30060CTR

DIODE MODULE GP 600V 150A 2TOWER

GeneSiC Semiconductor

 5,754
RFQ

Datasheet

 		- Twin Tower Bulk Active 1 Pair Common Anode Standard 600 V 150A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MURT30010 GeneSiC Semiconductor electronic component

MURT30010

DIODE MODULE GP 100V 150A 3TOWER

GeneSiC Semiconductor

 3,682
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Cathode Standard 100 V 150A 1.3 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT30010R GeneSiC Semiconductor electronic component

MURT30010R

DIODE MODULE GP 100V 150A 3TOWER

GeneSiC Semiconductor

 7,145
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Anode Standard 100 V 150A 1.3 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT30020 GeneSiC Semiconductor electronic component

MURT30020

DIODE MODULE GP 200V 150A 3TOWER

GeneSiC Semiconductor

 6,682
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 150A 1.3 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT30020R GeneSiC Semiconductor electronic component

MURT30020R

DIODE MODULE GP 200V 150A 3TOWER

GeneSiC Semiconductor

 9,973
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 150A 1.3 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT30040 GeneSiC Semiconductor electronic component

MURT30040

DIODE MODULE GP 400V 150A 3TOWER

GeneSiC Semiconductor

 3,820
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 150A 1.35 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT30040R GeneSiC Semiconductor electronic component

MURT30040R

DIODE MODULE GP 400V 150A 3TOWER

GeneSiC Semiconductor

 3,181
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Anode Standard 400 V 150A 1.35 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT30060 GeneSiC Semiconductor electronic component

MURT30060

DIODE MODULE GP 600V 150A 3TOWER

GeneSiC Semiconductor

 2,447
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 150A 1.7 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT30060R GeneSiC Semiconductor electronic component

MURT30060R

DIODE MODULE GP 600V 150A 3TOWER

GeneSiC Semiconductor

 8,691
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 150A 1.7 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT400150 GeneSiC Semiconductor electronic component

MBRT400150

DIODE MOD SCHOT 150V 200A 3TOWER

GeneSiC Semiconductor

 2,117
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT400150R GeneSiC Semiconductor electronic component

MBRT400150R

DIODE MOD SCHOT 150V 200A 3TOWER

GeneSiC Semiconductor

 6,510
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Anode Schottky 150 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT400200 GeneSiC Semiconductor electronic component

MBRT400200

DIODE MOD SCHOT 200V 200A 3TOWER

GeneSiC Semiconductor

 8,201
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 200A 920 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT400200R GeneSiC Semiconductor electronic component

MBRT400200R

DIODE MOD SCHOT 200V 200A 3TOWER

GeneSiC Semiconductor

 3,474
RFQ

Datasheet

 		- Three Tower Bulk Active 1 Pair Common Anode Schottky 200 V 200A 920 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
JAN1N7047CCT3 Microchip Technology electronic component

JAN1N7047CCT3

DIODE ARR SCHOTT 150V 16A TO-257

Microchip Technology

 6,768
RFQ

-

 - TO-257-3 Bulk Active 1 Pair Common Cathode Schottky 150 V 16A 1.13 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 150 V -65°C ~ 150°C Military MIL-PRF-19500/737 Through Hole TO-257
M50100DD600 Sensata-Crydom electronic component

M50100DD600

DIODE MODULE GP 600V 100A MODULE

Sensata-Crydom

 5,419
RFQ

Datasheet

 		- Module Bulk Obsolete 1 Pair Series Connection Standard 600 V 100A 1.2 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
JANTXV1N5712UBD Microchip Technology electronic component

JANTXV1N5712UBD

DIODE ARRAY SCHOTTKY 16V 75MA UB

Microchip Technology

 4,791
RFQ

-

 - 4-SMD, No Lead Bulk Active 1 Pair Series Connection Schottky 16 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V -65°C ~ 150°C Military MIL-PRF-19500/444 Surface Mount UB
JANTXV1N5712UBCA Microchip Technology electronic component

JANTXV1N5712UBCA

DIODE ARRAY SCHOTTKY 16V 75MA UB

Microchip Technology

 5,700
RFQ

-

 - 4-SMD, No Lead Bulk Active 1 Pair Common Anode Schottky 16 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V -65°C ~ 150°C Military MIL-PRF-19500/444 Surface Mount UB
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Diode Arrays Electronic Components

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