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Diode Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
MDD310-14N1 IXYS electronic component

MDD310-14N1

DIODE MODULE GP 1400V 305A Y2DCB

IXYS

5,382
RFQ

Datasheet

- Y2-DCB Box Active 1 Pair Series Connection Standard 1400 V 305A 1.2 V @ 600 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 1400 V -40°C ~ 150°C - - Chassis Mount Y2-DCB
DD89N16KHPSA2 Infineon Technologies electronic component

DD89N16KHPSA2

DIODE MODULE GP 1600V 89A MODULE

Infineon Technologies

2,521
RFQ

-

- Module Tray Active 1 Pair Series Connection Standard 1600 V 89A 1.5 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1600 V 150°C - - Chassis Mount Module
MBRT40035 GeneSiC Semiconductor electronic component

MBRT40035

DIODE MOD SCHOTT 35V 200A 3TOWER

GeneSiC Semiconductor

2,462
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 35 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT400100R GeneSiC Semiconductor electronic component

MBRT400100R

DIODE MOD SCHOT 100V 200A 3TOWER

GeneSiC Semiconductor

2,747
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 100 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40035R GeneSiC Semiconductor electronic component

MBRT40035R

DIODE MOD SCHOTT 35V 200A 3TOWER

GeneSiC Semiconductor

4,351
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 35 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40045R GeneSiC Semiconductor electronic component

MBRT40045R

DIODE MOD SCHOTT 45V 200A 3TOWER

GeneSiC Semiconductor

3,512
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky 45 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40020 GeneSiC Semiconductor electronic component

MBRT40020

DIODE MOD SCHOTT 20V 200A 3TOWER

GeneSiC Semiconductor

2,509
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 20 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40020R GeneSiC Semiconductor electronic component

MBRT40020R

DIODE MOD SCHOTT 20V 200A 3TOWER

GeneSiC Semiconductor

8,009
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky 20 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40030 GeneSiC Semiconductor electronic component

MBRT40030

DIODE MOD SCHOTT 30V 200A 3TOWER

GeneSiC Semiconductor

6,518
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 30 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40030R GeneSiC Semiconductor electronic component

MBRT40030R

DIODE MOD SCHOTT 30V 200A 3TOWER

GeneSiC Semiconductor

6,563
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky 30 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40040 GeneSiC Semiconductor electronic component

MBRT40040

DIODE MOD SCHOTT 40V 200A 3TOWER

GeneSiC Semiconductor

3,261
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 40 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40040R GeneSiC Semiconductor electronic component

MBRT40040R

DIODE MOD SCHOTT 40V 200A 3TOWER

GeneSiC Semiconductor

2,619
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky 40 V 200A 750 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40060 GeneSiC Semiconductor electronic component

MBRT40060

DIODE MOD SCHOTT 60V 200A 3TOWER

GeneSiC Semiconductor

9,311
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 60 V 200A 800 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40060R GeneSiC Semiconductor electronic component

MBRT40060R

DIODE MOD SCHOTT 60V 200A 3TOWER

GeneSiC Semiconductor

4,701
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky 60 V 200A 800 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40080 GeneSiC Semiconductor electronic component

MBRT40080

DIODE MOD SCHOTT 80V 200A 3TOWER

GeneSiC Semiconductor

9,570
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT40080R GeneSiC Semiconductor electronic component

MBRT40080R

DIODE MOD SCHOTT 80V 200A 3TOWER

GeneSiC Semiconductor

7,749
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky 80 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MUR30010CT GeneSiC Semiconductor electronic component

MUR30010CT

DIODE MODULE GP 100V 150A 2TOWER

GeneSiC Semiconductor

8,036
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 100 V 150A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR30010CTR GeneSiC Semiconductor electronic component

MUR30010CTR

DIODE MODULE GP 100V 150A 2TOWER

GeneSiC Semiconductor

6,932
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Anode Standard 100 V 150A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR30020CT GeneSiC Semiconductor electronic component

MUR30020CT

DIODE MODULE GP 200V 150A 2TOWER

GeneSiC Semiconductor

8,554
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 200 V 150A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR30020CTR GeneSiC Semiconductor electronic component

MUR30020CTR

DIODE MODULE GP 200V 150A 2TOWER

GeneSiC Semiconductor

3,975
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Anode Standard 200 V 150A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
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Diode Arrays Electronic Components

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