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Single IGBTs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IKWH100N65EH7XKSA1 Infineon Technologies electronic component

IKWH100N65EH7XKSA1

IGBT TRENCH FS 650V 140A TO247-3

Infineon Technologies

85
RFQ

Datasheet

TRENCHSTOP™ TO-247-3 Tube Active Trench Field Stop 650 V 140 A 400 A 1.65V @ 15V, 100A 427 W 3.58mJ (on), 2.37mJ (off) Standard 199 nC 32ns/240ns 400V, 100A, 10Ohm, 15V 106 ns -40°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-32
FGY4L75T120SWD onsemi electronic component

FGY4L75T120SWD

1200V 75A FS7 IGBT TP247-4L

onsemi

11
RFQ

Datasheet

- TO-247-4 Tube Active Field Stop 1200 V 150 A 300 A 2V @ 15V, 75A 652 W 2.9mJ (on), 2.1mJ (off) Standard 225.6 nC 65.6ns/241.6ns 600V, 75A, 11.5Ohm, 15V 208 ns -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
FGY4L140T120SWD onsemi electronic component

FGY4L140T120SWD

1200V 140A FS7 IGBT TP247-4L

onsemi

18
RFQ

Datasheet

- TO-247-4 Tube Active Field Stop 1200 V 200 A 560 A 2V @ 15V, 140A 1250 W 3.9mJ (on), 4.6mJ (off) Standard 426 nC 60.8ns/232ns 600V, 140A, 4.7Ohm, 15V 266.9 ns -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
FGY4L160T120SWD onsemi electronic component

FGY4L160T120SWD

1200V 160A FS7 IGBT TP247-4L

onsemi

38
RFQ

Datasheet

- TO-247-4 Tube Active Field Stop 1200 V 200 A 640 A 2V @ 15V, 160A 1500 W 4.2mJ (on), 5.9mJ (off) Standard 474 nC 60.8ns/236.8ns 600V, 160A, 4Ohm, 15V 264.1 ns -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
APT35GP120B2D2G Microchip Technology electronic component

APT35GP120B2D2G

IGBT PT 1200V 96A TMAX

Microchip Technology

40
RFQ

-

POWER MOS 7® TO-247-3 Variant Tube Active PT 1200 V 96 A 140 A 3.9V @ 15V, 35A 540 W 1mJ (on), 1.185mJ (off) Standard 150 nC 14ns/99ns 800V, 35A, 5Ohm, 15V 85 ns -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT35GP120B2DQ2G Microchip Technology electronic component

APT35GP120B2DQ2G

IGBT PT 1200V 96A

Microchip Technology

28
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active PT 1200 V 96 A 140 A 3.9V @ 15V, 35A 543 W 750µJ (on), 680µJ (off) Standard 150 nC 16ns/95ns 600V, 35A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
IXYK85N120C4H1 IXYS electronic component

IXYK85N120C4H1

IGBT TRENCH 1200V 220A SOT227B

IXYS

82
RFQ

Datasheet

XPT™ SOT-227-4, miniBLOC Tube Active Trench 1200 V 220 A 420 A 2.5V @ 15V, 85A 1150 W 4.3mJ (on), 2mJ (off) Standard 192 nC 35ns/280ns 600V, 50A, 5Ohm, 15V 265 ns -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
HGTD3N60B3S Harris Corporation electronic component

HGTD3N60B3S

7A, 600V, UFS N-CHANNEL IGBT

Harris Corporation

944
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active - 600 V 7 A 20 A 2.1V @ 15V, 3.5A 33.3 W 66µJ (on), 88µJ (off) Standard 21 nC 18ns/105ns 480V, 3.5A, 82Ohm, 15V 16 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
HGTP3N60B3R4724 Harris Corporation electronic component

HGTP3N60B3R4724

7A, 600V, UFS N-CHANNEL IGBT

Harris Corporation

800
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
HGT1S3N60B3S Harris Corporation electronic component

HGT1S3N60B3S

7A, 600V, UFS N-CHANNEL IGBT

Harris Corporation

800
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active - 600 V 7 A 20 A 2.1V @ 15V, 3.5A 33.3 W 66µJ (on), 88µJ (off) Standard 21 nC 18ns/105ns 480V, 3.5A, 82Ohm, 15V 16 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB
FGA30N60LSDTU onsemi electronic component

FGA30N60LSDTU

IGBT TRENCH/FS 600V 60A TO3P

onsemi

5,703
RFQ

-

- TO-3P-3, SC-65-3 Tube Obsolete Trench Field Stop 600 V 60 A 90 A 1.4V @ 15V, 30A 480 W 1.1mJ (on), 21mJ (off) Standard 225 nC 18ns/250ns 400V, 30A, 6.8Ohm, 15V 35 ns -55°C ~ 150°C (TJ) - - Through Hole TO-3P
SGP6N60UFDTU Fairchild Semiconductor electronic component

SGP6N60UFDTU

N-CHANNEL IGBT

Fairchild Semiconductor

869
RFQ

Datasheet

- TO-220-3 Tube Obsolete - 600 V 6 A 25 A 2.6V @ 15V, 3A 30 W 57µJ (on), 25µJ (off) Standard 15 nC 15ns/60ns 300V, 3A, 80Ohm, 15V 52 ns -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
HGTP7N60A4_NL Fairchild Semiconductor electronic component

HGTP7N60A4_NL

IGBT, 34A, 600V, N-CHANNEL

Fairchild Semiconductor

511
RFQ

Datasheet

- TO-220-3 Bulk Active - 600 V 34 A 56 A 2.7V @ 15V, 7A 125 W 55µJ (on), 60µJ (off) Standard 37 nC 11ns/100ns 390V, 7A, 25Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRGB4B60KPBF Infineon Technologies electronic component

IRGB4B60KPBF

IGBT 600V 12A 63W TO220A

Infineon Technologies

5,794
RFQ

Datasheet

- TO-220-3 Bulk Obsolete NPT 600 V 12 A 24 A 2.5V @ 15V, 4A 63 W 130µJ (on), 83µJ (off) Standard 12 nC 22ns/100ns 400V, 4A, 100Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FGP10N60UNDF onsemi electronic component

FGP10N60UNDF

IGBT NPT 600V 20A TO220-3

onsemi

9,864
RFQ

Datasheet

- TO-220-3 Tube Obsolete NPT 600 V 20 A 30 A 2.45V @ 15V, 10A 139 W 150µJ (on), 50µJ (off) Standard 37 nC 8ns/52.2ns 400V, 10A, 10Ohm, 15V 37.7 ns -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
NGB8207BNT4G onsemi electronic component

NGB8207BNT4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi

800
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete - 365 V 20 A 50 A 2.6V @ 4V, 20A 165 W - Logic - - - - -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
HGTP6N40EID Harris Corporation electronic component

HGTP6N40EID

7.5A, 400V, N-CHANNEL IGBT

Harris Corporation

800
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
HGTP12N60A4 Fairchild Semiconductor electronic component

HGTP12N60A4

UFS SERIES N-CH IGBT

Fairchild Semiconductor

900
RFQ

Datasheet

- TO-220-3 Tube Obsolete - 600 V 54 A 96 A 2.7V @ 15V, 12A 167 W 55µJ (on), 50µJ (off) Standard 78 nC 17ns/96ns 390V, 12A, 10Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
HGTD7N60B3 Harris Corporation electronic component

HGTD7N60B3

IGBT 600V 14A IPAK

Harris Corporation

900
RFQ

Datasheet

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active - 600 V 14 A 56 A 2.1V @ 15V, 7A 60 W 160µJ (on), 120µJ (off) Standard 30 nC 26ns/130ns 480V, 7A, 50Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole IPAK
IRGR2B60KDPBF Infineon Technologies electronic component

IRGR2B60KDPBF

IGBT NPT 600V 6.3A TO252AA

Infineon Technologies

5,937
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete NPT 600 V 6.3 A 8 A 2.25V @ 15V, 2A 35 W 74µJ (on), 39µJ (off) Standard 12 nC 11ns/150ns 400V, 2A, 100Ohm, 15V 68 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
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Single IGBTs Electronic Components

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