FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPP086N10N3GXKSA1 MOSFET N-CH 100V 80A TO220-3 Infineon Technologies	7,855	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	6V, 10V	8.6mOhm @ 73A, 10V	3.5V @ 75µA	55 nC @ 10 V	±20V	3980 pF @ 50 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
SIHA6N65E-E3 MOSFET N-CHANNEL 650V 7A TO220 Vishay Siliconix	2,348	RFQ	Datasheet	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 250µA	48 nC @ 10 V	±30V	1640 pF @ 100 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
NTTFS6H880NLTAG MOSFET N-CH 80V 6.6A/22A 8WDFN onsemi	2,176	RFQ	Datasheet	-	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	6.6A (Ta), 22A (Tc)	4.5V, 10V	29mOhm @ 5A, 10V	2V @ 20µA	9 nC @ 10 V	±20V	431 pF @ 40 V	-	3.1W (Ta), 33W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)
SIHB12N60E-GE3 MOSFET N-CH 600V 12A D2PAK Vishay Siliconix	9,837	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	58 nC @ 10 V	±30V	937 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
TK58E06N1,S1X MOSFET N-CH 60V 58A TO220 Toshiba Semiconductor and Storage	8,657	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	58A (Ta)	10V	5.4mOhm @ 29A, 10V	4V @ 500µA	46 nC @ 10 V	±20V	3400 pF @ 30 V	-	110W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
PSMN6R0-25YLDX MOSFET N-CH 25V 61A LFPAK56 Nexperia USA Inc.	3,776	RFQ	Datasheet	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	61A (Tc)	4.5V, 10V	6.75mOhm @ 15A, 10V	2.2V @ 1mA	10.5 nC @ 10 V	±20V	705 pF @ 12 V	Schottky Diode (Body)	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8
NTTFS030N06CTAG MOSFET N-CH 60V 6A/19A 8WDFN onsemi	6,909	RFQ	Datasheet	-	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta), 19A (Tc)	10V	29.7mOhm @ 3A, 10V	4V @ 13µA	4.7 nC @ 10 V	±20V	255 pF @ 30 V	-	2.5W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)
SIS780DN-T1-GE3 MOSFET N-CH 30V 18A PPAK1212-8 Vishay Siliconix	5,217	RFQ	Datasheet	-	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	18A (Tc)	4.5V, 10V	13.5mOhm @ 15A, 10V	2.3V @ 250µA	24.5 nC @ 10 V	±20V	722 pF @ 15 V	Schottky Diode (Body)	27.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
BUK7Y72-80EX MOSFET N-CH 80V 16A LFPAK56 Nexperia USA Inc.	3,357	RFQ	Datasheet	TrenchMOS™	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	16A (Tc)	10V	72mOhm @ 5A, 10V	4V @ 1mA	9.8 nC @ 10 V	±20V	633 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8
STQ1NC45R-AP MOSFET N-CH 450V 500MA TO92-3 STMicroelectronics	7,137	RFQ	Datasheet	SuperMESH™	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	450 V	500mA (Tc)	10V	4.5Ohm @ 500mA, 10V	3.7V @ 250µA	7 nC @ 10 V	±30V	160 pF @ 25 V	-	3.1W (Tc)	-65°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
SI5448DU-T1-GE3 MOSFET N-CH 40V 25A PPAK Vishay Siliconix	7,614	RFQ	Datasheet	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	25A (Tc)	4.5V, 10V	7.75mOhm @ 15A, 10V	2.5V @ 250µA	20 nC @ 4.5 V	+20V, -16V	1765 pF @ 20 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® ChipFet Single
IPP60R280P6XKSA1 MOSFET N-CH 600V 13.8A TO220-3 Infineon Technologies	6,660	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	280mOhm @ 6.5A, 10V	3.5V @ 430µA	43 nC @ 10 V	±20V	950 pF @ 100 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
SIHP14N60E-GE3 MOSFET N-CH 600V 13A TO220AB Vishay Siliconix	8,456	RFQ	Datasheet	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	309mOhm @ 7A, 10V	4V @ 250µA	64 nC @ 10 V	±30V	1205 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SIHP12N65E-GE3 MOSFET N-CH 650V 12A TO220AB Vishay Siliconix	4,304	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	70 nC @ 10 V	±30V	1224 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SIHA14N60E-E3 MOSFET N-CHANNEL 600V 13A TO220 Vishay Siliconix	2,150	RFQ	Datasheet	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	309mOhm @ 7A, 10V	4V @ 250µA	64 nC @ 10 V	±30V	1205 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
IRF830ALPBF MOSFET N-CH 500V 5A I2PAK Vishay Siliconix	3,839	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	1.4Ohm @ 3A, 10V	4.5V @ 250µA	24 nC @ 10 V	±30V	620 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
SIHB12N50E-GE3 MOSFET N-CH 500V 10.5A D2PAK Vishay Siliconix	2,746	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	10.5A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	50 nC @ 10 V	±30V	886 pF @ 100 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIHF7N60E-E3 MOSFET N-CH 600V 7A TO220 Vishay Siliconix	8,214	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	600mOhm @ 3.5A, 10V	4V @ 250µA	40 nC @ 10 V	±30V	680 pF @ 100 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
TK34A10N1,S4X MOSFET N-CH 100V 34A TO220SIS Toshiba Semiconductor and Storage	6,833	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	34A (Tc)	10V	9.5mOhm @ 17A, 10V	4V @ 500µA	38 nC @ 10 V	±20V	2600 pF @ 50 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IRFBC40APBF-BE3 MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix	7,524	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	-	1.2Ohm @ 3.7A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	1036 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB

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FETs, MOSFETs Electronic Components

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