FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPA65R650CEXKSA1 MOSFET N-CH 650V 7A TO220 Infineon Technologies	5,661	RFQ	Datasheet	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	650mOhm @ 2.1A, 10V	3.5V @ 210µA	23 nC @ 10 V	±20V	440 pF @ 100 V	-	28W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-FP
TK2K2A60F,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	5,328	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.5A (Ta)	10V	2.2Ohm @ 1.8A, 10V	4V @ 350µA	13 nC @ 10 V	±30V	450 pF @ 300 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS
IRF820PBF-BE3 MOSFET N-CH 500V 2.5A TO220AB Vishay Siliconix	7,657	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	2.5A (Tc)	10V	3Ohm @ 1.5A, 10V	4V @ 250µA	24 nC @ 10 V	±20V	360 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
TK1K9A60F,S4X MOSFET N-CH 600V 3.7A TO220SIS Toshiba Semiconductor and Storage	4,302	RFQ	Datasheet	U-MOSIX	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.7A (Ta)	10V	1.9Ohm @ 1.9A, 10V	4V @ 400µA	14 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS
SI2306BDS-T1-BE3 N-CHANNEL 30-V (D-S) MOSFET Vishay Siliconix	4,540	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.16A (Ta)	4.5V, 10V	47mOhm @ 3.5A, 10V	3V @ 250µA	4.5 nC @ 5 V	±20V	305 pF @ 15 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)
IRFZ10PBF MOSFET N-CH 60V 10A TO220AB Vishay Siliconix	7,793	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	10V	200mOhm @ 6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
SSM6J212FE,LF MOSFET P-CH 20V 4A ES6 Toshiba Semiconductor and Storage	7,347	RFQ	Datasheet	U-MOSVI	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.5V, 4.5V	40.7mOhm @ 3A, 4.5V	1V @ 1mA	14.1 nC @ 4.5 V	±8V	970 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	ES6
IPA60R400CEXKSA1 MOSFET N-CH 600V 10.3A TO220-FP Infineon Technologies	3,356	RFQ	Datasheet	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10.3A (Tc)	10V	400mOhm @ 3.8A, 10V	3.5V @ 300µA	32 nC @ 10 V	±20V	700 pF @ 100 V	-	31W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
IPA60R360P7XKSA1 MOSFET N-CHANNEL 650V 9A TO220 Infineon Technologies	8,738	RFQ	Datasheet	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	22W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220 Full Pack
IPU95R750P7AKMA1 MOSFET N-CH 950V 9A TO251-3 Infineon Technologies	7,622	RFQ	Datasheet	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	950 V	9A (Tc)	10V	750mOhm @ 4.5A, 10V	3.5V @ 220µA	23 nC @ 10 V	±20V	712 pF @ 400 V	-	73W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3
IRF710SPBF MOSFET N-CH 400V 2A D2PAK Vishay Siliconix	9,897	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	2A (Tc)	10V	3.6Ohm @ 1.2A, 10V	4V @ 250µA	17 nC @ 10 V	±20V	170 pF @ 25 V	-	3.1W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPA60R600P6XKSA1 MOSFET N-CH 600V 4.9A TO220-FP Infineon Technologies	8,619	RFQ	Datasheet	CoolMOS™ P6	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	4.9A (Tc)	10V	600mOhm @ 2.4A, 10V	4.5V @ 200µA	12 nC @ 10 V	±20V	557 pF @ 100 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
SIRA84BDP-T1-GE3 MOSFET N-CH 30V 22A/70A PPAK SO8 Vishay Siliconix	3,404	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	22A (Ta), 70A (Tc)	4.5V, 10V	4.6mOhm @ 15A, 10V	2.4V @ 250µA	32 nC @ 10 V	+20V, -16V	1050 pF @ 15 V	-	3.7W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
PJQ2407_R1_00001 30V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	5,165	RFQ	Datasheet	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	8.4A (Ta)	4.5V, 10V	20mOhm @ 8.4A, 10V	2.5V @ 250µA	11 nC @ 4.5 V	±20V	1169 pF @ 15 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020B-6
SSM3J140TU,LXHF SMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage	5,613	RFQ	Datasheet	U-MOSVI	3-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.4A (Ta)	1.5V, 4.5V	25.8mOhm @ 4A, 4.5V	1V @ 1mA	24.8 nC @ 4.5 V	+6V, -8V	1800 pF @ 10 V	-	500mW (Ta)	150°C	Automotive	AEC-Q101	Surface Mount	UFM
IRF530SPBF MOSFET N-CH 100V 14A TO263 Vishay Siliconix	2,572	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	3.7W (Ta), 88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPA65R600E6XKSA1 MOSFET N-CH 650V 7.3A TO220-FP Infineon Technologies	2,022	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	3.5V @ 210µA	23 nC @ 10 V	±20V	440 pF @ 100 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
IPP052N06L3GXKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	8,392	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	5mOhm @ 80A, 10V	2.2V @ 58µA	50 nC @ 4.5 V	±20V	8400 pF @ 30 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IPA80R1K0CEXKSA2 MOSFET N-CH 800V 5.7A TO220-FP Infineon Technologies	9,897	RFQ	Datasheet	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	5.7A (Tc)	10V	950mOhm @ 3.6A, 10V	3.9V @ 250µA	31 nC @ 10 V	±20V	785 pF @ 100 V	-	32W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
SIHB6N65E-GE3 MOSFET N-CH 650V 7A D2PAK Vishay Siliconix	6,309	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 250µA	48 nC @ 10 V	±30V	820 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)

Total 36322 Record«Prev 1... 802 803 804 805806807 808 809...1817 Next»

FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
This category includes related FETs, MOSFETs subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for FETs, MOSFETs components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.

+86 13682508533

admin@raywiseic.com

+86 13682508533